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| 20080314870 | Substrate Processing Method, Substrate Processing Apparatus, and Control Program - This invention provides a substrate processing method including a step of covering in advance the surface of a substrate W with water ( | 12-25-2008 |
| 20090000549 | Substrate processing method and apparatus - There is provided a substrate processing method and apparatus which can measure and monitor thickness and/or properties of a film formed on a substrate as needed, and quickly correct a deviation in process conditions, and which can therefore stably provide a product of constant quality. A substrate processing method for processing a substrate having a metal and an insulating material exposed on its surface in such a manner that a film thickness of the metal, with an exposed surface of the metal as a reference plane, is selectively or preferentially changed, including measuring a change in the film thickness and/or a film property of the metal during and/or immediately after processing, and monitoring processing and adjusting processing conditions based on results of this measurement. | 01-01-2009 |
| 20090139870 | Plating apparatus and plating method - A method can form a conductive structure, which is useful for three-dimensional packaging with via plugs, in a shorter time by shortening the conventional long plating time that is an impediment to the practical use of electroplating. The method includes forming a conductive film on an entire surface, including interior surfaces of via holes, of a substrate having the via holes formed in the surface; forming a resist pattern at a predetermined position on the conductive film; carrying out first electroplating under first plating conditions, using the conductive film as a feeding layer, thereby filling a first plated film into the via holes; and carrying out second electroplating under second plating conditions, using the conductive film and the first plated film as a feeding layer, thereby allowing a second plated film to grow on the conductive film and the first plated film, both exposed in the resist openings of the resist pattern. | 06-04-2009 |
| 20090197510 | Polishing method and apparatus - This polishing method and polishing apparatus include: a polishing characteristics measurement step in which electrochemical characteristics of a slurry in relation to a material to be polished are measured; and a preparation step in which the slurry is prepared based on the measured electrochemical characteristics, wherein, in the polishing characteristics measurement step, a slurry is supplied from a slurry supply apparatus | 08-06-2009 |
| 20100075498 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND PROCESSING LIQUID - A semiconductor device has interconnects protected with an alloy film having a minimum thickness necessary for producing the effect of preventing diffusion of oxygen, copper, etc., formed more uniformly over an entire surface of a substrate with less dependency to the interconnect pattern of the substrate. The semiconductor device includes, embedded interconnects, formed by filling an interconnect material into interconnect recesses formed in an electric insulator on a substrate, and an alloy film, containing 1 to 9 atomic % of tungsten or molybdenum and 3 to 12 atomic % of phosphorus or boron, formed by electroless plating on at least part of the embedded interconnects. | 03-25-2010 |
| 20100105154 | METHOD AND APPARATUS FOR PROCESSING SUBSTRATE - A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substrate processing method includes: cleaning a surface of a substrate having a base metal formed in the surface with a cleaning solution comprising an aqueous solution of a carboxyl group-containing organic acid or its salt and a surfactant as an additive; bringing the surface of the substrate after the cleaning into contact with a processing solution comprising a mixture of the cleaning solution and a solution containing a catalyst metal ion, thereby applying the catalyst to the surface of the substrate; and forming a metal film by electroless plating on the catalyst-applied surface of the substrate. | 04-29-2010 |
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| 20100149460 | Liquid Crystal Display Device and Method for Manufacturing the Same - A liquid crystal display device may include a first substrate; a second substrate; a first polarizing plate on the first substrate; a second polarizing plate arranged on the second substrate, and so that a direction of an absorption axis of the second polarizing plate being perpendicular to a direction of an absorption axis of the first polarizing plate; a liquid crystal layer arranged between the first substrate and the second substrate; a color filter layer arranged between the liquid crystal layer and the first or the second substrate, the color filter layer having a plurality of pixels of two or more colors. The retardation thin film has in-plane birefringence index satisfying 0.75≦Δn[fr]/λd[fr]≦1.35 for a region corresponding to a reflection part of a pixel and satisfying Δn[t]<1.2×10 | 06-17-2010 |
| 20110025952 | Retardation plate, method for manufacturing the retardation plate, and liquid crystal display - A retardation plate includes a light transmissive planar body and a solidified liquid crystal layer which is a continuous film made from the same material supported by the planar body. The solidified liquid crystal layer comprises a plurality of regions in which a thickness direction refractive indices are lowest. The plurality of regions are arranged on the planar body, each region has a different in-plane retardation and different thickness direction retardation caused by the degree of orientational disorder of mesogens and anisotropy of orientational disorder of mesogens. | 02-03-2011 |
| 20110025954 | Retardation substrate, semi-transparent liquid crystal display, and method for manufacturing retardation substrate - A retardation substrate is provided, which includes a substrate and an optically anisotropic solidified liquid crystal layer which is supported by the substrate and formed as a continuous film made from a same material. The solidified liquid crystal layer comprises first to third regions each having two sub-regions which are a sub-region A and a sub-region B, an in-plane birefringence of the 1A sub-region is larger than that of the 2A sub-region, the in-plane birefringence of the 3A sub-region is smaller than that of the 2A sub-region, and an in-plane birefringence of the 1B sub-region is the same as that of the 3B sub-region, smaller than that of the 1A sub-region and larger than that of the 3A sub-region. | 02-03-2011 |
| 20110141407 | Retardation substrate, method of manufacturing the same, and liquid crystal display - A retardation layer that includes regions causing different retardations can be manufactured easily. A retardation substrate includes a substrate and a solidified liquid crystal layer facing its main surface. The solidified liquid crystal layer includes first to third regions, and a degree of depolarization for each of the regions is less than 5.0×10 | 06-16-2011 |
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| 20100008815 | STEEL SUPERIOR IN CTOD PROPERTIES OF WELD HEAT-AFFECTED ZONE AND METHOD OF PRODUCTION OF SAME - The present invention provides high strength steel having unprecedentedly superior CTOD (fracture toughness) properties satisfying not only the CTOD properties of the FL zone at −60° C., but also the CTOD properties of the ICHAZ zone in small and medium heat input multilayer welding etc. and a method of production of the same. | 01-14-2010 |
| 20100206440 | METHOD OF PRODUCTION OF 780 MPA CLASS HIGH STRENGTH STEEL PLATE EXCELLENT IN LOW TEMPERATURE TOUGHNESS - A method of production of 780 MPa class high strength steel plate excellent low temperature toughness comprising heating a steel slab of containing, by mass %, C: 0.06 to 0.15%, Si: 0.05 to 0.35%, Mn: 0.60 to 2.00%, P: 0.015% or less, S: 0.015% or less, Cu: 0.1 to 0.5%, Ni: 0.1 to 1.5%, Cr: 0.05 to 0.8%, Mo: 0.05 to 0.6%, Nb: less than 0.005%, V: 0.005 to 0.060%, Ti: less than 0.003%, Al: 0.02 to 0.10%, B: 0.0005 to 0.003%, and N: 0.002 to 0.006% to 1050° C. to 1200° C. in temperature, hot rolling ending at 870° C. or more, waiting for 10 seconds to 90 seconds, then cooling from 840° C. or more in temperature by a 5° C./s or more cooling rate to 200° C., then tempering at 450° C. to 650° C. in temperature for 20 minutes to 60 minutes. | 08-19-2010 |
| 20110268601 | STEEL FOR WELDED STRUCTURE AND PRODUCING METHOD THEREOF - A steel for a welded structure includes the following composition: by mass %, C at a C content [C] of 0.015 to 0.045%; Si at a Si content [Si] of 0.05 to 0.20%; Mn at a Mn content [Mn] of 1.5 to 2.0%; Ni at a Ni content [Ni] of 0.10 to 1.50%; Ti at a Ti content [Ti] of 0.005 to 0.015%; O at an O content [O] of 0.0015 to 0.0035%; and N at a N content [N] of 0.002 to 0.006%, and a balance composed of Fe and unavoidable impurities. In the steel for a welded structure, the P content [P] is limited to 0.008% or less, the S content [S] is limited to 0.005% or less, the Al content [Al] is limited to 0.004% or less, the Nb content [Nb] is limited to 0.005% or less, the Cu content [Cu] is limited to 0.24% or less, the V content [V] is limited to 0.020% or less, and a steel composition parameter P | 11-03-2011 |
| 20120027637 | STEEL FOR WELDED STRUCTURE AND PRODUCING METHOD THEREOF - A steel for a welded structure includes the following composition: by mass %, C at a C content [C] of 0.010 to 0.065%; Si at a Si content [Si] of 0.05 to 0.20%; Mn at a Mn content [Mn] of 1.52 to 2.70%; Ni at a Ni content [Ni] of 0.10% to 1.50%; Ti at a Ti content [Ti] of 0.005 to 0.015%; 0 at an O content [O] of 0.0010 to 0.0045%; N at a N content [N] of 0.002 to 0.006%; Mg at a Mg content [Mg] of 0.0003 to 0.003%; Ca at a Ca content [Ca] of 0.0003 to 0.003%; and the balance composed of Fe and unavoidable impurities. A steel component parameter P | 02-02-2012 |
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| 20110209578 | NANOPARTICLE MANUFACTURING DEVICE AND NANOPARTICLE MANUFACTURING METHOD AND METHOD OF MANUFACTURING NANOPARTICLE-DISPERSED LIQUID ALKALI METAL - A nanoparticle manufacturing device capable of particle size control of nanoparticles made of a raw material metal powder and control of the occurrence condition of chaining of nanoparticles and of necking. The device 1 is provided for manufacturing nanoparticles by heating and melting a mixture of a raw material metal powder and a carrier gas in a heating space, cooling the mixture in a cooling space and collecting the mixture in a collection space. The heating space, the cooling space and the collection space form a continuous flow path without a back flow, and the cross-sectional area of the collection space is set at a large value compared to the cross-sectional area of the heating space and the cooling space. Further, there is provided a method of manufacturing a nanoparticle-dispersed liquid alkali metal by dispersing nanoparticles in a liquid alkali metal. A liquid alkali metal obtained by dispersing nanoparticles in the liquid alkali metal is manufactured by performing a rough dispersion step of stirring nanoparticles in the liquid alkali metal by a physical effect and a dispersion step of dispersing nanoparticles in the liquid alkali metal by irradiating the liquid alkali metal with ultrasonic waves after the rough dispersion step. | 09-01-2011 |
| 20110210285 | LIQUID ALKALI METAL WITH DISPERSED NANOPARTICLES AND METHOD OF MANUFACTURING THE SAME - The present invention relates to maintaining the fundamental physical properties of a liquid alkali metal with dispersed nanoparticles which is such that nanoparticles are uniformly dispersed and mixed in a liquid alkali metal used in heat exchange, cooling and other applications, and suppressing the reaction of the liquid alkali metal with dispersed nanoparticles. Provided is a method of manufacturing a liquid alkali metal with dispersed nanoparticles by dispersing nanoparticles in a liquid alkali metal. In this method, the nanoparticles are made of a metal having a large atomic bonding due to a combination with the liquid alkali metal compared to the atomic bonding of atoms of the liquid alkali metal and a metal having a large amount of charge transfer is used in the nanoparticles. The liquid alkali metal is selected from sodium, lithium and sodium-potassium alloys, and the nanoparticles to be dispersed are made of transition metals, such as titanium, vanadium, chromium, iron, cobalt, nickel and copper. | 09-01-2011 |
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| 20100059197 | CONTINUOUS CASTING METHOD OF MOLTEN METAL - The present invention provides a continuous casting method of molten metal using electromagnetic force to improve the cast slab surface properties and reduce the nonmetallic inclusions and bubbles trapped inside the cast slab. An alternating current is run through an electromagnetic coil | 03-11-2010 |
| 20100084441 | REFRACTORY MATERIAL FOR NOZZLE FOR USE IN CONTINUOUS CASTING, AND CONTINUOUS CASTING NOZZLE - In a insert-type continuous casting nozzle comprising a highly functional layer formed to have a high corrosion resistance, a high anti-attachment capability, etc., and provided to define an inner bore thereof, the present invention is directed to providing a refractory material (mortar) for an intermediate layer of the continuous casting nozzle, which has a property capable of fixing an inner bore-side layer to an outer periphery-side layer (a nozzle body) of the continuous casting nozzle, while preventing the occurrence of expansion splitting in the outer periphery-side layer due to a difference in thermal expansion between the inner bore-side and outer periphery-side layers, and a continuous casting nozzle using the refractory material for the intermediate layer. The refractory material for the intermediate layer contains a hollow refractory aggregate in an amount of 10 to 75 volume %, wherein a ratio of an average radius R of each particle of the aggregate to an average wall thickness t of the particle satisfies the following relation: R/t≧10. This refractory material is disposed between an inner bore-side layer ( | 04-08-2010 |
| 20110253337 | CONTINUOUS CASTING METHOD AND NOZZLE HEATING DEVICE - In a continuous casting method, the outside surface of a continuous casting nozzle which supplies molten metal into a mold while immersed in the molten metal in the mold, is heated to 1000° C. or higher by a nozzle heating device comprising an external heater which performs radiant heating, while the molten metal passes through the continuous casting nozzle. | 10-20-2011 |
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| 20090021324 | RF module - The present invention provides an RF module capable of converting electromagnetic waves in the TE mode to balanced electromagnetic waves in the TEM mode without adjustment and outputting the balanced electromagnetic waves while easily realizing miniaturization. The RF module includes: a waveguide ( | 01-22-2009 |
| 20090085693 | Filter - A filter being small and having a narrowband filter characteristic is achieved using interdigital-coupled resonators. A first resonator and a second resonator are configured using interdigital-coupled quarter-wavelength resonators respectively. In addition, the first resonator and the second resonator are disposed so as to extend along directions intersecting with each other at a predetermined angle θ. Thus, coupling between the resonators is reduced compared with, for example, a case that the first resonator and the second resonator are, as a whole, disposed in parallel to each other. The angle θ, with which the first resonator and the second resonator are disposed respectively, is adjusted, thereby coupling between the resonators may be made into a desired state. Thus, a desired narrowband filter characteristic is obtained. | 04-02-2009 |
| 20100123526 | Balanced-output triplexer - A balanced-output triplexer includes: a first filter provided between an input terminal and a pair of first balanced output terminals; a second filter provided between the input terminal and a pair of second balanced output terminals; and a third filter provided between the input terminal and a pair of third balanced output terminals. All of the first to third filters are provided within a layered substrate. All of the balanced output terminals are disposed to be adjacent to one of the sides of the top surface of the layered substrate and one of the sides of the bottom surface of the layered substrate. | 05-20-2010 |
| 20100123528 | Balanced-output triplexer - A balanced-output triplexer includes: a first filter provided between an input terminal and a pair of first balanced output terminals; a second filter provided between the input terminal and a pair of second balanced output terminals; and a third filter provided between the input terminal and a pair of third balanced output terminals. Each of the first to third filters has a pair of output resonators that are interdigital-coupled to each other and connected to the corresponding pair of balanced output terminals. | 05-20-2010 |
| 20100194660 | PROXIMITY ANTENNA AND WIRELESS COMMUNICATION DEVICE - A proximity antenna includes a wiring pattern wound in a predetermined direction in a horizontal plane from a signal end to a ground end and a wiring pattern wound in a direction opposite to the predetermined direction in a horizontal plane from a signal end to a ground end, in which the wiring pattern and the wiring pattern are apposed in a vertical direction. The characteristics of a spiral coil having several turns can be thus obtained by a one-turn wiring width, and an installation space for other components, larger than a conventional installation space, can be therefore secured. | 08-05-2010 |
| 20100244984 | Resonator and filter - A resonator includes: a dielectric block; first and second ground electrodes provided on or in the dielectric block, and disposed to oppose each other; a first via conductor provided in the dielectric block orthogonally to the first and second ground electrodes, and having a short-circuit end connected to the first ground electrode and an open end extending toward the second ground electrode; a second via conductor interdigitally-coupled with the first via conductor, and provided in the dielectric block orthogonally to the first and second ground electrodes, and having a short-circuit end connected to the second ground electrode and an open end extending toward the first ground electrode; a first capacitor electrode provided in the dielectric block, and connected to the first via conductor; and a second capacitor electrode provided in the dielectric block, and connected to the second via conductor. | 09-30-2010 |
| 20100244995 | RF module - The present invention provides an RF module capable of converting electromagnetic waves in the TE mode to balanced electromagnetic waves in the TEM mode without adjustment and outputting the balanced electromagnetic waves while easily realizing miniaturization. The RF module includes: a waveguide ( | 09-30-2010 |
| 20120062343 | SIGNAL TRANSMISSION DEVICE, FILTER, AND INTER-SUBSTRATE COMMUNICATION DEVICE - A signal transmission device includes: a first substrate and a second substrate disposed to oppose each other in a first direction; a first resonator including a plurality of first quarter wavelength resonators provided in a first region of the first substrate, and interdigitally coupled to one another in the first direction, and a single or the plurality of second quarter wavelength resonators provided in a region of the second substrate corresponding to the first region and interdigitally coupled to one another in the first direction; and a second resonator electromagnetically coupled to the first resonator, and performing a signal transmission between the second resonator and the first resonator. The first and the second quarter wavelength resonators located at positions nearest to one another in the first resonator, respectively have open ends which are disposed to oppose one another, and respectively have short-circuit ends which are disposed to oppose one another. | 03-15-2012 |
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| 20110122302 | COLOR SENSOR - A pixel that detects short-wavelength light is provided in a light receiving unit on a silicon substrate and has a first color filter. A pixel that detects long-wavelength light is provided in the light receiving unit on the silicon substrate, is provided in a position closer to an outer edge of the light receiving unit than the pixel that detects the short-wavelength light, and has a second color filter. A longest-wavelength transmission band of the first color filter is a first transmission band, and the longest-wavelength transmission band of the second color filter is a second transmission band. The second transmission band has a longer wavelength than the first transmission band. | 05-26-2011 |
| 20110249159 | IMAGING DEVICE - An imaging device is provided with a color sensor including a first color sensor pixel and a second color sensor pixel. The first color sensor pixel includes a first color filter made from a first material, a second color filter made from a second material and superimposed on the first color filter, and a first color sensor element that is superimposed on the first color filter and the second color filter, and receives light that has passed through them. The second color sensor pixel includes a third color filter made from the first material, a fourth color filter made from the second material, superimposed on the third color filter, and having a different thickness to that of the second color filter, and a second color filter element that is superimposed on the third color filter and the fourth color filter, and receives light that has passed through them. | 10-13-2011 |
