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Fukuda, Yamaguchi
Kentaro Fukuda, Yamaguchi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100001191 | RADIATION DETECTION APPARATUS AND METHOD OF DETECTING RADIATION - A radiation detection apparatus comprising a scintillator composed of a lanthanum fluoride crystal containing neodymium or a lithium barium fluoride crystal containing neodymium, for converting incident radiation into ultraviolet ray and a micro-strip gas chamber for converting the incident ultraviolet ray into an electric signal and capable of extracting the radiation as an electric signal. | 01-07-2010 |
| 20100314550 | SCINTILLATOR FOR NEUTRON DETECTION AND NEUTRON DETECTOR - To provide a scintillator for neutron detection which has high sensitivity to neutron rays, and is reduced in a background noise attributed to γ rays. | 12-16-2010 |
| 20110061587 | METHOD OF PRODUCING PRETREATED METAL FLUORIDES AND FLUORIDE CRYSTALS - [Problem] To provide a method of producing a pretreated metal fluoride containing impurities such as oxygen in decreased amounts and a fluoride crystal containing impurities such as oxygen in decreased amounts and having excellent optical properties such as transparency. | 03-17-2011 |
| 20110122400 | ULTRAVIOLET LIGHT RECEIVING ELEMENT AND METHOD FOR MEASURING DOSE OF ULTRAVIOLET RADIATION - [Problems to be Solved] To provide a novel ultraviolet light receiving element which is selectively sensitive to ultraviolet radiation, and a method for measuring the dose of ultraviolet radiation using the ultraviolet light receiving element. | 05-26-2011 |
Masayuki Fukuda, Yamaguchi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100047563 | SILICON WAFER AND METHOD FOR MANUFACTURING THE SAME - Silicon wafers wherein slip dislocations and warpages during device production are suppressed, contain BMDs with an octahedral shape, and of BMDs at a depth greater than 50 μm from the surface of the wafer, the density of BMDs with diagonal size of 10 nm to 50 nm is ≧1×10 | 02-25-2010 |
| 20100155903 | Annealed wafer and method for producing annealed wafer - An annealed wafer having enhanced gettering effects for Cu is produced by heating a silicon substrate containing a nitrogen concentration of 5×10 | 06-24-2010 |
Nobuo Fukuda, Yamaguchi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080210637 | Adsorbent,Method for Producing Same, and Method for Processing Oil-Containing Waste Water - The present invention provides an adsorbent comprising calcined coke with a BET surface area of 20 m | 09-04-2008 |
Shinji Fukuda, Yamaguchi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090322186 | THIN FILM PIEZOELECTRIC RESONATOR AND METHOD FOR MANUFACTURING THE SAME - A thin film piezoelectric resonator suppresses deterioration of impedance at antiresonant frequency and has a high Q value. The thin film piezoelectric resonator is provided with a semiconductor substrate ( | 12-31-2009 |
Yasuhisa Fukuda, Yamaguchi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110034687 | PROCESS FOR PRODUCING AMIDE OR LACTAM - The present invention relates to a process for producing an amide or lactam, particularly laurolactam, wherein catalytic amounts of an acidic chloride and a Lewis acid are used in Beckmann rearrangement of an oxime compound. In accordance with the process, side reactions during Beckmann rearrangement can be so controlled that selectivity can be improved and strong coloring in the reaction can be prevented, giving a high-quality amide or lactam. | 02-10-2011 |