| Patent application number | Description | Published |
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| 20080299728 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device manufacturing method includes: forming a sidewall spacer on a sidewall surface of a gate electrode; forming a pair of second conductive type source and drain regions in an active region; covering top surfaces of a semiconductor layer, a device isolation region, the sidewall spacer and the gate electrode with a metal film; reducing resistance of the source and drain regions and the gate electrode partially by making the metal film react with the semiconductor layer and the gate electrode; and removing an unreacted portion of the metal film and the sidewall spacer simultaneously by using an etchant which readily etches the unreacted portion of the metal film and the sidewall spacer while hardly etching the device isolation region, resistance-reduced portions of the gate electrode and resistance-reduced portions of the source and drain regions. | 12-04-2008 |
| 20090304906 | EVAPORATING APPARATUS, APPARATUS FOR CONTROLLING EVAPORATING APPARATUS, METHOD FOR CONTROLLING EVAPORATING APPARATUS, METHOD FOR USING EVAPORATING APPARATUS AND METHOD FOR MANUFACTURING BLOWING PORT - An evaporating apparatus | 12-10-2009 |
| 20100086681 | CONTROL DEVICE OF EVAPORATING APPARATUS AND CONTROL METHOD OF EVAPORATING APPARATUS - Provided is a control device of an evaporating apparatus performing a film forming process on a substrate with a film forming material evaporated from a vapor deposition source, and a storage of the control device stores a plurality of tables each showing a relationship between a deposition rate and a flow rate of a carrier gas. A table selection unit selects a desired table from the plurality of tables stored in the storage based on a processing condition. A deposition controller calculates a deposition rate based on a signal outputted from a QCM. A carrier gas controller controls the flow rate of the carrier gas to obtain a desired deposition rate based on a difference between a target deposition rate and the deposition rate obtained by the deposition controller, with reference to data indicating the relationship between the deposition rate and the flow rate of the carrier gas. | 04-08-2010 |
| 20100173467 | THIN FILM AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE THIN FILM - A thin film is used in a semiconductor device manufacturing process. The thin film contains silicon, germanium, and oxygen. | 07-08-2010 |
| 20110008938 | THIN FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE THIN FILM - Disclosed is a thin film which is used in the production process of a semiconductor device. The thin film contains germanium, silicon, nitrogen and hydrogen. | 01-13-2011 |
| Patent application number | Description | Published |
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| 20100182863 | SEMICONDUCTOR MEMORY DEVICE - A conventional semiconductor memory device may be in need of a special refresh sequence if it is desired to reduce the current consumption in connection with a refresh operation. With this in view, there is disclosed a semiconductor memory device | 07-22-2010 |
| 20100195413 | SEMICONDUCTOR MEMORY DEVICE - To provide a semiconductor memory device including a mode register in which a mode signal is set, a data amplifier that amplifies read data read from a memory cell array, a data bus onto which the read data amplified by the data amplifier is transmitted, a data input/output circuit that outputs a signal on the data bus to outside, and a mode signal output circuit that outputs the mode signal set in the mode register onto the data bus. Because the mode signal is not caused to interrupt halfway along the data input/output circuit, but supplied onto the data bus that connects the data amplifier to the data input/output circuit, no collision of the read data with the mode signal occurs in the data input/output circuit. | 08-05-2010 |
| 20110029762 | SEMICONDUCTOR DEVICE PERFORMING SERIAL PARALLEL CONVERSION - A first transfer circuit includes pipeline circuits having different number of stages, and switch circuits that exclusively supply the pipeline circuits with first and second read data. A second transfer circuit includes pipeline circuits having different number of stages, and switch circuits that exclusively supply the pipeline circuits with third and fourth read data. Outputs of the first and second transfer circuits are sequentially output from a multiplex circuit. When a first operation mode is selected, all the pipeline circuits are activated. When a second operation mode is selected, one of the pipeline circuits in the first transfer circuit and one of the pipeline circuits in the second transfer circuit are activated, whereas the others of the pipeline circuits are inactivated. | 02-03-2011 |
