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Fukasaku
Hiroshi Fukasaku, Aichi-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20100315024 | INVERTER DEVICE - An inverter device includes a filter circuit, an inverter circuit, an electric current detecting circuit, a voltage detecting circuit, a control circuit for outputting a drive signal so as to switch switching devices ON and OFF and an internal power supply. The control circuit includes a shutdown circuit for stopping outputting the drive signal from the control circuit to the switching devices when an electric current flowing through a motor is an overcurrent or a voltage across the inverter circuit is an overvoltage. The shutdown circuit also stops outputting the drive signal from the control circuit to the switching devices when the voltage outputted from the internal power supply is not stabilized. When electric power by residual charge in the capacitor is used after the inverter device is disconnected from a high-voltage battery, the control circuit generates the drive signal based on a triangular reference waveform and also based on three command values for keeping switching devices corresponding to one phase of three phases in either ON or OFF state and for switching ON and OFF the other switching devices corresponding to the remaining two phases. | 12-16-2010 |
| 20110140551 | HEAT RECOVERY SYSTEM FOR VEHICLE - A heat recovery system includes an electric rotary device, a heat exchanger, a pipe and a reservoir. The electric rotary device has a stator core and a housing. The stator core is wounded with a coil. The heat exchanger provides heat exchanging between first and second heat medium. The first heat medium is in contact with the coil and absorbs heat from the coil. The pipe connects the electric rotary device to the heat exchanger and transfers the first heat medium. The reservoir is formed in the housing and stores the first heat medium. The electric rotary device has an insulative body. The insulative body prevents heat of the first heat medium from being dissipated outside of the housing. | 06-16-2011 |
Izumi Fukasaku, Tsurugajima JP
| Patent application number | Description | Published |
|---|---|---|
| 20100067915 | PHOTOELECTRIC COMPOSITE WIRING COMPONENT AND ELECTRONIC APPARATUS EMPLOYING IT - To provide a photoelectric composite wiring component combining both characteristics of low power consumption of transmission over electrical wiring and large transmission capacity of optical transmission over optical wiring, and exhibiting a high power efficiency for the transmission capacity. A mechanism for switching between transmission of a transmission signal over an electrical transmission path and that over an optical transmission path depending on the modulation rate or the transmission rate of the transmission signal is provided. When the modulation rate or the transmission rate of the transmission signal is low, power supply to an optical transmitting/receiving section is stopped and the signal is transmitted over the electrical transmission path, thus achieving low power consumption. When the modulation rate or the transmission rate of the transmission signal is high, the signal is transmitted over the optical transmission path, thus achieving a large transmission capacity. | 03-18-2010 |
Katsuhiko Fukasaku, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20090057771 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed herein is a semiconductor device including a semiconductor substrate provided with an N-type FET and P-type FET, with a gate electrode of the N-type FET and a gate electrode of the P-type FET having undergone full-silicidation, wherein the gate electrode of the P-type FET has such a sectional shape in the gate length direction that the gate length decreases as one goes upwards from a surface of the semiconductor substrate, and the gate electrode of the N-type FET has such a sectional shape in the gate length direction that the gate length increases as one goes upwards from the surface of the semiconductor substrate. | 03-05-2009 |
| 20090057786 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a high dielectric constant gate insulator film provided on a Si substrate which is a semiconductor substrate, a gate electrode formed on the high dielectric constant gate insulator film, a protective film provided on side surfaces of the high dielectric constant gate insulator film and the gate insulator, and a side wall film provided on the outside of the protective film. The protective film includes a high dielectric constant material having, in its composition, at least one metal selected from the group consisting of Hf, Zr, Al, La, Pr, Y, Ti, Ta and W, whereby it is possible to suppress the causes of such troubles as dispersions of characteristics and deterioration of short channel characteristic. | 03-05-2009 |
Masaki Fukasaku, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090017842 | Mobile Communication System, Telephone Calling Method and Program Software for The Same - A source portable terminal ( | 01-15-2009 |