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Fujiwara, Yokohama-Shi

Daisuke Fujiwara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20100080862COMPOSITIONS AND FOODS FOR IMPROVING LIPID METABOLISM - It is intended to provide compositions and foods for use in the treatment, prophylaxis, or amelioration of diseases or symptoms which can be treated, prevented or ameliorated by activating PPAR, in particular, insulin resistant diabetes and hyperlipidemia. Namely, medicinal compositions usable in treating, preventing or improving diseases or symptoms which can be treated, prevented or ameliorated by activation PPAR which contain humulones, isohumulones or lupulones or pharmaceutically acceptable salts or solvates thereof.04-01-2010

Ikuo Fujiwara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20080237468SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREOF - This disclosure concerns a solid-state imaging device including a pixel thermally separated from a substrate; a heat conduction switch having one end connected to the substrate and other end capable of contacting to the substrate or the pixel, the heat conduction switch changing over a state of the pixel to one of a first state and a second state, the first state being a state in which the pixel is thermally isolated from the substrate by causing the other end of the heat conduction switch to contact with the substrate, the second state being a state in which the pixel is thermally shorted to the substrate by causing the other end of the heat conduction switch to contact with the pixel; and a signal detector detecting a difference between the signal voltage of the pixel in the first state and the signal voltage of the pixel in the second state.10-02-2008
20090015491ELECTROMAGNETIC WAVE SENSOR, IMAGING ELEMENT AND IMAGING DEVICE - The present invention enables to provide a simple and inexpensive electromagnetic wave sensor that selectively detects sub-millimeter waves and millimeter waves in a specific frequency band, an imaging element and an imaging device. The distance of the gap between a plurality of antenna elements is smaller than the wavelength of infrared light. A capacitor electrically formed by the gap between the plurality of antenna elements, and an electrical resistor portion form parallel circuits electrically coupled to the antenna portion. The plurality of antenna elements are formed so that the impedance of the antenna portion is matched with the impedance of the parallel circuits against electromagnetic waves having a predetermined frequency, and is not matched against the higher harmonics of electromagnetic waves having the predetermined frequency.01-15-2009
20090236526INFRARED RAY SENSOR ELEMENT - An infrared ray sensor element includes: a first signal wiring part including a first signal wire and provided on a first region of a semiconductor substrate different from a region on which a concave part is provided; a second signal wiring part including a second signal wire and provided on the first region so as to intersect the first signal wiring part; a supporter including a support wiring part disposed over the concave part, and including a first wire electrically connected at a first end thereof to the first signal wire, and a second wire insulated from the first wire, disposed in parallel with the first wire, and electrically connected at a first end thereof to the second signal wire; a thermoelectric transducer electrically connected to second ends of the first and second wires; an infrared ray absorption layer provided over the thermoelectric transducer; and a detection cell provided over the concave part.09-24-2009
20090266987INFRARED DETECTOR AND SOLID STATE IMAGE SENSOR HAVING THE SAME - An infrared detector includes: a readout wiring portion provided on a semiconductor substrate; a support structure portion disposed over a concave portion formed in a surface portion of the semiconductor substrate, the support structure portion having connection wiring connected electrically to the readout wiring portion; and a cell portion disposed over the concave portion and supported by the support structure portion. The cell portion includes: an infrared absorption layer absorbing incident infrared rays; and a plurality of thermoelectric conversion elements connected electrically to the support structure portion and insulated electrically from the infrared absorption layer to generate an electric signal by detecting a temperature change of the cell portion, each of the thermoelectric conversion elements includes a semiconductor layer, a p-type silicon layer and an n-type silicon layer formed with a space between them in the semiconductor layer, and a polysilicon layer formed on the semiconductor layer between the p-type silicon layer and the n-type silicon layer.10-29-2009
20100025584IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels.02-04-2010
20120007205INFRARED IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.01-12-2012

Patent applications by Ikuo Fujiwara, Yokohama-Shi JP

Masashi Fujiwara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20090019809WELDING METHOD AND STEEL PLATE DECK - A method of welding a deck plate and a closed section rib both constituting a steel plate deck, comprising: working a root portion of the closed section rib to have a flat surface in parallel with a surface of the deck plate; and welding the deck plate and the closed section rib while making the flat surface of the closed section rib to be in contact with the surface of the deck plate.01-22-2009

Nobuhiro Fujiwara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20100133734VIBRATION CONTROL EQUIPMENT - In a vibration control equipment 06-03-2010

Ryo Fujiwara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20120009479ELECTRODE PLATE FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY, METHOD FOR PRODUCING THE SAME, AND NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY - An electrode plate for a non-aqueous electrolyte secondary battery comprises a current collector, and an electrode active material layer formed on at least part of the surface of the current collector. The electrode active material layer contains a particulate electrode active material and a binding material. The binding material is made of an amorphous metal oxide that does not cause alkaline metal ion intercalation and deintercalation reactions.01-12-2012

Tomoko Fujiwara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20110013454NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device comprises: a plurality of first memory strings; a first select transistor having one end thereof connected to one end of the first memory strings; a first line commonly connected to the other end of a plurality of the first select transistors; a switch circuit having one end thereof connected to the first line; and a second line commonly connected to the other end of a plurality of the switch circuits. The switch circuit controls electrical connection between the second line and the first line.01-20-2011
20110049608NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A memory string comprises: a first semiconductor layer including a columnar portion extending in a stacking direction on a substrate; a first charge storage layer surrounding the columnar portion; and a plurality of first conductive layers stacked on the substrate so as to surround the first charge storage layer. A select transistor comprises: a second semiconductor layer in contact with an upper surface of the columnar portion and extending in the stacking direction; a second charge storage layer surrounding the second semiconductor layer; and a second conductive layer deposited above the first conductive layer to surround the second charge storage layer. The second charge storage layer is formed from a layer downward of the second conductive layer to an upper end vicinity of the second conductive layer, and is not formed in a layer upward of the upper end vicinity.03-03-2011
20110075481NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device comprises: a bit line; a source line; a memory string having a plurality of electrically data-rewritable memory transistors connected in series; a first select transistor provided between one end of the memory string and the bit line; a second select transistor provided between the other end of the memory string and the source line; and a control circuit configured to control a read operation. A plurality of the memory strings connected to one bit line via a plurality of the first select transistors. During reading of data from a selected one of the memory strings, the control circuit renders conductive the first select transistor connected to an unselected one of the memory strings and renders non-conductive the second select transistor connected to unselected one of the memory strings.03-31-2011

Yoshihiro Fujiwara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20080292338IMAGE FORMING APPARATUS - An image forming apparatus includes an image carrier, an image forming member, a transferer, a toner image detector, and a controller. The transferer transfers the toner image from the image carrier directly or indirectly onto a recording medium transported by a surface moving member. The toner image detector detects a test toner image formed in a test toner image detection area located at an end portion of the surface moving member. The controller checks a length of the recording medium in a main scanning direction during continuous image formation, and forms the test toner image either in a space between recording media when the length of the recording medium exceeds a length of the surface moving member minus a length of the test toner image detection area in the main scanning direction or otherwise in parallel to the toner image transferred onto the recording medium.11-27-2008
20100202805DEVELOPMENT DEVICE, PROCESS CARTRIDGE, AND IMAGE FORMING APPARATUS - A development device includes a developer containing part containing two-component developer, a cylindrical developer carrier to carry by rotation the developer to a development range, a first developer transport member disposed in the developer containing part, to supply the developer to the developer carrier while transporting the developer in an axial direction of the developer carrier, and a magnetic field generator disposed inside the developer carrier, having three developer-carrying magnetic poles, consisting of a development pole to generate a first magnetic field in the development range, a pre-development pole to generate a second magnetic field to transport the developer supplied from the developer containing part to the development range, and a post-development pole to generate a third magnetic field disposed between the first magnetic field and the second magnetic field, to transport the developer to a release position where the developer is separated from the developer carrier.08-12-2010
20100215401DEVELOPMENT DEVICE, PROCESS CARTRIDGE, AND IMAGE FORMING APPARATUS - A development device to develop a latent image with two-component developer includes a developer carrier disposed facing the image carrier, to carry the developer, a magnetic field generator disposed inside the developer carrier, to form multiple magnetic poles around the developer carrier, an interior wall dividing the interior of the development device into a first transport chamber and a second transport chamber parallel to the first transport chamber, a first transport member disposed in the first transport chamber, facing the developer carrier, to supply the developer to the developer carrier while transporting the developer longitudinally, a second transport member disposed in the second transport chamber, facing the developer carrier, to transport the developer separated from the developer carrier longitudinally, a partition disposed between the developer carrier and the second transport member to prevent resupply of the used developer in the second transport chamber from to the developer carrier.08-26-2010
20110008073DEVELOPMENT DEVICE AND IMAGE FORMING APPARATUS - A development device includes a developer container internally divided by a partition into a supply path and a recovery path, a developer bearing member, a supply conveyance member to apply force to convey developer to a developer retaining space through the supply path, the developer retaining space retaining the developer to be conveyed by the developer bearing member, a recovery conveyance member, a communication pathway provided between the supply path and the developer retaining space, the communication pathway passing the developer from the supply path to the developer retaining space, and a developer softening member to soften the developer that is present above the partition, provided at least one of at a position in the communication pathway and at a position close to the communication pathway.01-13-2011

Patent applications by Yoshihiro Fujiwara, Yokohama-Shi JP