| Patent application number | Description | Published |
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| 20090194017 | METHOD FOR PRODUCING p-TYPE SiC SEMICONDUCTOR SINGLE CRYSTAL - A method for producing a p-type SiC semiconductor single crystal, including: using a solution in which C is dissolved in a Si melt and 30 to 70 at. % Cr and 0.1 to 20 at. % Al, based on a total weight of the Si melt, Cr, and Al, are added to the Si melt, to grow a p-type SiC semiconductor single crystal on a SiC single crystal substrate from the solution. | 08-06-2009 |
| 20100288188 | METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL - In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C by dissolving C into the melt that contains Si, Cr and X, which consists of at least one element of Sn, In and Ga, such that the proportion of Cr in the whole composition of the melt is in a range of 30 to 70 at. %, and the proportion of X is in a range of 1 to 25 at. %, and the silicon carbide crystal is grown from the solution. | 11-18-2010 |
| 20100308344 | METHOD FOR GROWING P-TYPE SIC SEMICONDUCTOR SINGLE CRYSTAL AND P-TYPE SIC SEMICONDUCTOR SINGLE CRYSTAL - In a method for growing a p-type SiC semiconductor single crystal on a SiC single crystal substrate, using a first solution in which C is dissolved in a melt of Si, a second solution is prepared by adding Al and N to the first solution such that an amount of Al added is larger than that of N added, and the p-type SiC semiconductor single crystal is grown on the SiC single crystal substrate from the second solution. A p-type SiC semiconductor single crystal is provided which is grown by the method as described above, and which contains 1×10 | 12-09-2010 |
| 20110297893 | PRODUCTION METHOD OF N-TYPE SIC SINGLE CRYSTAL, N-TYPE SIC SINGLE CRYSTAL OBTAINED THEREBY AND APPLICATION OF SAME - A method for producing n-type SiC single crystal, including: adding gallium and nitrogen, which is a donor element, for obtaining an n-type semiconductor during crystal growth of SiC single crystal, such that the amount of nitrogen as represented in atm unit is greater than the amount of gallium as represented in atm unit; an n-type SiC single crystal obtained according to this production method; and, a semiconductor device that includes the n-type SiC single crystal. | 12-08-2011 |
| 20110315073 | METHOD OF PRODUCING SIC SINGLE CRYSTAL - In a method of producing an SiC single crystal, the SiC single crystal is grown on an SiC seed crystal by bringing the SiC seed crystal, which is fixed at a rotatable seed crystal fixing shaft, into contact with a solution produced by dissolving carbon in melt containing silicon in a rotatable crucible. The method includes starting rotation of the seed crystal fixing shaft, and starting rotation of the crucible after a predetermined delay time (Td); then stopping the rotation of the seed crystal fixing shaft and the rotation of the crucible simultaneously; then stopping the seed crystal fixing shaft and the crucible for a predetermined stop time (Ts); and repeating a rotation/stop cycle. | 12-29-2011 |
| Patent application number | Description | Published |
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| 20100172670 | ELECTROPHOTOGRAPHIC PHOTORECEPTOR, IMAGE FORMING APPARATUS AND PROCESS CARTRIDGE THEREFOR USING THE ELECTROPHOTOGRAPHIC PHOTORECEPTOR - An electrophotographic photoreceptor, including an electroconductive substrate; a photosensitive layer, located overlying the electroconductive substrate; and an outermost layer comprising a convexity, wherein each of the outermost layer and the convexity includes a crosslinked body including a structural unit having a same charge transportable structure, and wherein the number of convexity having a height not less than ½×RzJIS is from 30 to 300 in a measurement length of 12 mm, wherein RzJIS is an average of ten-point mean roughness specified in JIS B0601 of 2001 and measured at least 4 random positions in an area the outermost layer is formed on, and wherein the height of the convexity is a distance from the deepest valley to a top of the convexity in the measurement length of 12 mm. | 07-08-2010 |
| 20110200924 | ELECTROPHOTOGRAPHIC PHOTORECEPTOR, AND IMAGE FORMING APPARATUS AND PROCESS CARTRIDGE USING THE PHOTORECEPTOR - An electrophotographic photoreceptor, including an electroconductive substrate; a photosensitive layer; a crosslinked surface layer comprising α-alumina and tin oxide, wherein a first one-dimensional data array obtained from measuring a concavo-convex shape of the surface of the photoreceptor is subjected to a wavelet conversion to be separated into 6 frequency components, the one-dimensional data array of the lowest frequency component is further thinned so as to have 1/40 data arrays to obtain a second one-dimensional data array, the second one-dimensional data array is further subjected to the wavelet conversion to be separated into additional 6 frequency components, and wherein when relationships between respective arithmetic average roughness (WRa) (y-axis) of the 12 frequency components and the frequency components (x-axis) are graphed, at least WRa (214 to 551 μm) and WRa (26 to 106 μm) have a folding point or a maximum point. | 08-18-2011 |
