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| 20100148212 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR LIGHT- EMITTING DEVICE - The method for producing a group III nitride semiconductor crystal of the invention comprises a step of preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing step includes growing the group III nitride semiconductor so as to extend in the +C-axis direction of the seed crystal. A group III-V nitride semiconductor crystal having high quality and a large-area non-polar plane can be obtained by the method. | 06-17-2010 |
| 20100158785 | Method for Growing Group III-Nitride Crystals in Supercritical Ammonia Using an Autoclave - A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600° C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals. | 06-24-2010 |
| 20100200865 | GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR CLEANING THE SAME - A Group-III nitride semiconductor substrate having a flat surface with a dangling bond density of higher than 14.0 nm | 08-12-2010 |
| 20110129669 | NITRIDE SEMICONDUCTOR CRYSTAL AND ITS PRODUCTION METHOD - A method for efficiently producing a plate-like nitride semiconductor crystal having the desired principal plane in a simple method is provided. A raw material gas is fed to a seed crystal in which a ratio (L/W) of length L in a longitudinal direction and maximum width W, of a plane of projection obtained by projecting a crystal growth face on the seed crystal in a growth direction is from 2 to 400, and the maximum width W is 5 mm or less, thereby growing a plate-like semiconductor crystal on the seed crystal. | 06-02-2011 |
| 20110180904 | GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR CLEANING THE SAME - A Group-III nitride semiconductor substrate having a flat surface with a dangling bond density of higher than 14.0 nm | 07-28-2011 |
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| 20110211452 | RADIO BASE STATION AND RADIO COMMUNICATION METHOD - A radio base station, comprising a DAP/RLSE/FLSE judging unit configured to judge whether the radio base station functions as both RLSE and FLSE, an application judging unit configured to judge whether the application running on the radio terminal is a specific application, and a handover instruction transmission unit configured to transmit a handover instruction to the radio terminal to handover either the RLSE or FLSE to another radio base station, when it is determined that the radio base station functions both as RLSE and FLSE and the running application is not the specific application. | 09-01-2011 |
| 20110261750 | RADIO TERMINAL, RELAY DEVICE, AND RADIO COMMUNICATION METHOD - Disclosed is a radio terminal that sets a communication path that transits a radio base station and a communication path that transits a radio base station, through an access gateway that is positioned upon a backhaul network, the radio terminal including a transmitter which transmits an uplink packet over the communication path to the access gateway, and transmits a dummy packet over the communication path to the access gateway, and a determination unit, which employs the uplink packet to determine a first communication quality of the communication path and employs the dummy packet to determine a second communication quality of the communication path wherein, when the second communication quality is higher than the first communication quality, the transmitter stops the transmission of the uplink packet over the communication path and transmits the uplink packet over the communication path. | 10-27-2011 |
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| 20090254696 | SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF OPERATION FOR SEMICONDUCTOR INTEGRATED CIRCUIT - The semiconductor IC has a nonvolatile memory including twin cells, a selector, and a sense circuit. When complementary data are written into a pair of nonvolatile memory cells of each twin cell, the pair of nonvolatile memory cells is set to be in a written state where one cell of the pair is set to one of low and high threshold voltages, and the other is set to the other threshold voltage. When non-complementary data are written into a pair of nonvolatile memory cells, for example, the memory cells both take the low threshold voltage and are made blank. The selector includes switching elements. During the blank-check action, switching elements of the selector are controlled to ON state. Then, the first total current of the twin cells forced to flow into the first input terminal of the sense circuit commonly is compared with the reference signal on the second input terminal, whereby whether the twin cells have been written or blank can be detected at a high speed. As to a semiconductor nonvolatile memory such that complementary data are written into memory cells in memory cell pairs, the blank-check time can be shortened. | 10-08-2009 |
| 20100080058 | SEMICONDUCTOR DEVICE - The semiconductor device includes a nonvolatile memory, having a memory array containing 1-bit twin cells, each composed of electrically rewritable first and second storage devices, the first and second storage devices holding binary data according to difference of their threshold voltages, and having different retention characteristics depending on difference of the binary data thereof; a read circuit for differentially amplifying complementary data output from the first and second storage devices of the twin cell selected for read, and judging information stored in the twin cell; and a control circuit. Two memory cells constituting a twin cell are arranged to hold different data. Therefore, even when the retention performance of one memory cell deteriorates, the difference between data held by the two memory cells can be maintained. Hence, differential amplification of such difference enables acquisition of proper stored information. Thus, retention performance of an electrically rewritable nonvolatile memory cell is improved. | 04-01-2010 |
| 20110208904 | SEMICONDUCTOR DEVICE - The semiconductor device includes a nonvolatile memory, having a memory array containing 1-bit twin cells, each composed of electrically rewritable first and second storage devices, the first and second storage devices holding binary data according to difference of their threshold voltages, and having different retention characteristics depending on difference of the binary data thereof; a read circuit for differentially amplifying complementary data output from the first and second storage devices of the twin cell selected for read, and judging information stored in the twin cell; and a control circuit. Two memory cells constituting a twin cell are arranged to hold different data. Therefore, even when the retention performance of one memory cell deteriorates, the difference between data held by the two memory cells can be maintained. Hence, differential amplification of such difference enables acquisition of proper stored information. Thus, retention performance of an electrically rewritable nonvolatile memory cell is improved. | 08-25-2011 |
