Fujii
Fujii Hirotada, Hokkaido JP
Patent application number | Description | Published |
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20120255853 | Method for Producing Superoxide, Method for Evaluating Superoxide Scavenging Ability, Device for Producing Superoxide, and Device for Evaluating Superoxide Scavenging Ability - A method for easily and stably producing a superoxide by selectively generating the superoxide or a radical containing the superoxide at a high purity; a method for easily evaluating the superoxide scavenging ability of a subject sample; a device for easily and stably producing a superoxide by selectively generating the superoxide or a radical containing the superoxide at a high purity; and a device for easily evaluating the superoxide scavenging ability of a subject sample are provided. The method for producing a superoxide includes: a step (a) for preparing a solution for determination; a step (b) for forming a spin adduct/radical for determination; a step (c) for acquiring a spectrum for determination; a step (d) for determining similarity; a step (e) for acquiring flavin concentration; a step (f) for preparing a starting material solution; and a step (g) for generation. | 10-11-2012 |
Fujii Mitsuru, Yongin-City KR
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20100002023 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF DRIVING THE SAME - An organic light emitting display device and a driving method thereof. The organic light emitting display device includes: a display panel having scan lines, data lines and pixels; a data driver for applying correction data to the data lines; a buffer memory for storing data inputted to the pixels coupled to the scan lines; and a correction operation unit for determining a luminance degree for the pixels coupled to each of the scan lines based on the data and generating a data correction value in accordance with the luminance degree, and for providing to the data driver the correction data generated by adding/subtracting the data correction value to/from the data in accordance with positions of the pixels coupled to each of the scan lines. | 01-07-2010 |
Fujii Shosuke, Yokohama-Shi JP
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20130015520 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a fin-type stacked layer structure in which a first insulating layer, a first semiconductor layer, . . . an n-th insulating layer, an n-th semiconductor layer, and an (n+1)-th insulating layer (n is a natural number equal to or more than 2) are stacked in order thereof in a first direction perpendicular to a surface of a semiconductor substrate and which extends in a second direction parallel to the surface of the semiconductor substrate, first to n-th memory strings which use the first to n-th semiconductor layers as channels respectively, a common semiconductor layer which combines the first to n-th semiconductor layers at first ends of the first to n-th memory strings in the second direction. | 01-17-2013 |