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Fudeta
Mayuko Fudeta, Osaka-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100163901 | NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT - In a nitride semiconductor light emitting element, a light transmitting substrate has an upper surface on which a nitride semiconductor layer including at least a light emitting layer is formed. On the upper surface of the light transmitting substrate, recess regions and rise regions are formed. One of each of the recess regions and each of the rise regions is formed by a polygon having at least one apex having an interior angle of 180° or greater when viewed in a planar view. The other of each of the recess regions and each of the rise regions is formed not to be connected to one another in a straight line when viewed in a planar view. A nitride semiconductor light emitting element having such a configuration has excellent light extraction efficiency and can be manufactured at a moderate cost. | 07-01-2010 |
Mayuko Fudeta, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20100032701 | Nitride semiconductor light emitting device and method of manufacturing the same - A nitride semiconductor light-emitting device including a reflecting layer made of a dielectric material, a transparent conductive layer, a p-type nitride semiconductor layer, a light emitting layer and an n-type nitride semiconductor layer in this order and a method of manufacturing the same are provided. The transparent conductive layer is preferably made of a conductive metal oxide or an n-type nitride semiconductor, and the reflecting layer made of a dielectric material preferably has a multilayer structure obtained by alternately stacking a layer made of a dielectric material having a high refractive index and a layer made of a dielectric material having a low refractive index. | 02-11-2010 |
Mayuko Fudeta, Hiroshima JP
| Patent application number | Description | Published |
|---|---|---|
| 20090212318 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A nitride-based semiconductor light-emitting device and a manufacturing method thereof are provided. The nitride-based light-emitting device includes a first conductivity type nitride-based semiconductor layer, a light-emitting layer and a second conductivity type nitride-based semiconductor layer, that are successively layered above a translucent base. A first conductivity type electrode layer is electrically connected to the first conductivity type nitride-based semiconductor layer, and a second conductivity type electrode layer is electrically connected to the second conductivity type nitride-based semiconductor layer. | 08-27-2009 |
Mayuko Fudeta, Mihara-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090072249 | Nitride Semiconductor Light-Emitting Device - A nitride semiconductor light-emitting device including a first n-type nitride semiconductor layer, a light-emitting layer, a p-type nitride semiconductor layer, and a second n-type nitride semiconductor layer in this order, and further including an electrode formed of a transparent conductive film on the second n-type nitride semiconductor layer is provided. The nitride semiconductor light-emitting device has improved light extraction efficiency. The electrode formed of a transparent conductive film is preferably formed on a part of a surface of the second n-type nitride semiconductor layer. | 03-19-2009 |