| Patent application number | Description | Published |
|---|
| 20090302296 | ALD PROCESSING TECHNIQUES FOR FORMING NON-VOLATILE RESISTIVE-SWITCHING MEMORIES - ALD processing techniques for forming non-volatile resistive-switching memories are described. In one embodiment, a method includes forming a first electrode on a substrate, maintaining a pedestal temperature for an atomic layer deposition (ALD) process of less than 100° Celsius, forming at least one metal oxide layer over the first electrode, wherein the forming the at least one metal oxide layer is performed using the ALD process using a purge duration of less than 20 seconds, and forming a second electrode over the at least one metal oxide layer. | 12-10-2009 |
| 20100330269 | Titanium-Based High-K Dielectric Films - This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on titanium oxide, to suppress the formation of anatase-phase titanium oxide and (b) related devices and structures. A metal-insulator-metal (“MIM”) stack is formed using an ozone pretreatment process of a bottom electrode (or other substrate) followed by an ALD process to form a TiO | 12-30-2010 |
| 20110014359 | Yttrium and Titanium High-K Dielectric Film - This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on yttrium and titanium to have a high dielectric constant and low leakage characteristic and (b) related devices and structures. An oxide layer having both yttrium and titanium may be fabricated either as an amorphous oxide or as an alternating series of monolayers. In several embodiments, the oxide is characterized by a yttrium contribution to total metal that is specifically controlled. The oxide layer can be produced as the result of a reactive process, if desired, via either a PVD process or, alternatively, via an atomic layer deposition process that employs specific precursor materials to allow for a common process temperature window for both titanium and yttrium reactions. | 01-20-2011 |
| 20110027617 | Methods of Forming Strontium Titanate Films - Embodiments of the current invention include methods of forming a strontium titanate (SrTiO | 02-03-2011 |
| 20110027960 | Methods of Forming Strontium Titanate Films - Embodiments of the current invention include methods of forming a strontium titanate (SrTiO | 02-03-2011 |
| 20110269267 | ALD PROCESSING TECHNIQUES FOR FORMING NON-VOLATILE RESISTIVE-SWITCHING MEMORIES - ALD processing techniques for forming non-volatile resistive-switching memories are described. In one embodiment, a method includes forming a first electrode on a substrate, maintaining a pedestal temperature for an atomic layer deposition (ALD) process of less than 100° Celsius, forming at least one metal oxide layer over the first electrode, wherein the forming the at least one metal oxide layer is performed using the ALD process using a purge duration of less than 20 seconds, and forming a second electrode over the at least one metal oxide layer. | 11-03-2011 |
| 20120061799 | Yttrium and Titanium High-K Dielectric Films - This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on yttrium and titanium, to have a high dielectric constant and low leakage characteristic and (b) related devices and structures. An oxide layer having both yttrium and titanium may be fabricated either as an amorphous oxide or as an alternating series of monolayers. In several embodiments, the oxide is characterized by a yttrium contribution to total metal that is specifically controlled. The oxide layer can be produced as the result of a reactive process, if desired, via either a PVD process or, alternatively, via an atomic layer deposition process that employs specific precursor materials to allow for a common process temperature window for both titanium and yttrium reactions. | 03-15-2012 |
