Patent application number | Description | Published |
20110254070 | TRENCH MOSFET WITH TRENCHED FLOATING GATES IN TERMINATION - A trench MOSFET comprising a plurality of transistor cells, multiple trenched floating gates in termination area is disclosed. The trenched floating gates have trench depth equal to or deeper than body junction depth of body regions in active area. In some preferred embodiments, the trench MOSFET further comprises a gate metal runner surrounding outside the source metal and extending to the gate metal pad. Furthermore, the termination area further comprises an EPR surrounding outside the trenched floating gates. | 10-20-2011 |
20110254071 | SHIELDED TRENCH MOSFET WITH MULTIPLE TRENCHED FLOATING GATES AS TERMINATION - A trench MOSFET comprising a plurality of transistor cells having shielded trenched gates and multiple trenched floating gates as termination region is disclosed. The trenched floating gates have trench depth equal to or deeper than body junction depth of body regions in termination area. In some preferred embodiments, the trenched floating gates in the termination area are implemented by using shielded electrode structure. | 10-20-2011 |
20110254086 | SHIELDED TRENCH MOSFET WITH MULTIPLE TRENCHED FLOATING GATES AS TERMINATION - A trench MOSFET comprising a plurality of transistor cells having shielded trenched gates and multiple trenched floating gates as termination region is disclosed. The trenched floating gates have trench depth equal to or deeper than body junction depth of body regions in termination area. In some preferred embodiments, the trenched floating gates in the termination area are implemented by using shielded electrode structure. | 10-20-2011 |
20110266593 | SEMICONDUCTOR DEVICES WITH GATE-SOURCE ESD DIODE AND GATE-DRAIN CLAMP DIODE - A semiconductor power device integrated with a Gate-Source ESD diode for providing an electrostatic discharge (ESD) protection and a Gate-Drain clamp diode for drain-source avalanche protection. The semiconductor power device further includes a Nitride layer underneath the diodes and a thick oxide layer as an etching stopper layer for protecting a thin oxide layer on top surface of body region from over-etching. | 11-03-2011 |
20110284954 | LOW Qgd TRENCH MOSFET INTEGRATED WITH SCHOTTKY RECTIFIER - An integrated circuit includes a plurality of trench MOSFET and a plurality of trench Schottky rectifier. The integrated circuit further comprises: tilt-angle implanted body dopant regions surrounding a lower portion of all trenched gates sidewalls for reducing Qgd; a source dopant region disposed below trench bottoms of all trenched gates for functioning as a current path for preventing a resistance increased caused by the tilt-angle implanted body dopant regions. | 11-24-2011 |
20110316075 | TRENCH MOSFET WITH TRENCHED FLOATING GATES HAVING THICK TRENCH BOTTOM OXIDE AS TERMINATION - A power semiconductor power device having composite trench bottom oxide and multiple trench floating gates is disclosed. The gate charge is reduced by forming a pad oxide surrounding a HDP oxide on trench bottom. The multiple trenched floating gates are applied in termination for saving body mask. | 12-29-2011 |
20120021580 | METHOD OF MANUFACTURING TRENCH MOSFET STRUCTURES USING THREE MASKS PROCESS - In according with the present invention, a semiconductor device is formed as follows. A contact insulation layer is deposited on the top surface of said silicon layer. A contact mask is applied and following with a dry oxide etching to remove the contact insulation layer from contact open areas. The silicon layer is implanted with a source dopant through the contact open areas and the source dopant is diffused to form source regions, thereby a source mask is saved. A dry silicon etch is carried out to form trenched source-body contacts in the contact open areas, penetrating through the source regions and extending into the body regions. | 01-26-2012 |
20120032261 | TRENCH MOSFET HAVING FLOATING DUMMY CELLS FOR AVALANCHE IMPROVEMENT - A trench MOSFET comprising source regions having a doping profile of a Gaussian-distribution along the top surface of epitaxial layer and floating dummy cells formed between edge trench and active area is disclosed. A SBR of n region existing at cell corners renders the parasitic bipolar transistor difficult to turn on, and the floating dummy cells having no parasitic bipolar transistor act as buffer cells to absorb avalanche energy when gate bias is increasing for turning on channel, therefore, the UIS failure issue is avoided and the avalanche capability of the trench MOSFET is enhanced. | 02-09-2012 |
20120061754 | SUPER-JUNCTION TRENCH MOSFET WITH RESURF STEPPED OXIDES AND SPLIT GATE ELECTRODES - A super-junction trench MOSFET with Resurf Stepped Oxide and split gate electrodes is disclosed. The inventive structure can apply additional freedom for better optimization of device performance and manufacturing capability by tuning thick oxide thickness to minimize influence of charge imbalance, trapped charges, etc. Furthermore, the fabrication method can be implemented more reliably with lower cost. | 03-15-2012 |
20120064684 | METHOD FOR MANUFACTURING A SUPER-JUNCTION TRENCH MOSFET WITH RESURF STEPPED OXIDES AND TRENCHED CONTACTS - A method of manufacturing a super junction semiconductor device having resurf stepped oxide structure is disclosed by providing semiconductor silicon layer having trenches and mesas. A plurality of first doped column regions of a second conductivity type in parallel surrounded with second doped column regions of a first conductivity type adjacent to sidewalls of the trenches are formed by angle ion implantations into a plurality of mesas through opening regions in a block layer covering both the mesas and a termination area. | 03-15-2012 |
20120074489 | SUPER-JUNCTION TRENCH MOSFET WITH RESURF STEPPED OXIDES AND TRENCHED CONTACTS - A super-junction trench MOSFET with Resurf Stepped Oxide and trenched contacts is disclosed. The inventive structure can apply additional freedom for better optimization and manufacturing capability by tuning thick oxide thickness to minimize influence of charge imbalance, trapped charges, etc. . . . Furthermore, the fabrication method can be implemented more reliably with lower cost. | 03-29-2012 |
20120175737 | SEMICONDUCTOR DEVICES WITH GATE-SOURCE ESD DIODE AND GATE-DRAIN CLAMP DIODE - A semiconductor power device integrated with a Gate-Source ESD diode for providing an electrostatic discharge (ESD) protection and a Gate-Drain clamp diode for drain-source avalanche protection. The semiconductor power device further includes a Nitride layer underneath the diodes and a thick oxide layer as an etching stopper layer for protecting a thin oxide layer on top surface of body region from over-etching. | 07-12-2012 |
20120187477 | SUPER-JUNCTION TRENCH MOSFET WITH MULTIPLE TRENCHED SOURCE-BODY CONTACTS - A super-junction trench MOSFET with split gate electrodes is disclosed for high voltage device by applying multiple trenched source-body contacts with narrow CDs in unit cell. Furthermore, source regions are only formed along channel regions near the gate trenches, not between adjacent trenched source-body contacts for UIS (Unclamped Inductance Switching) current enhancement | 07-26-2012 |
20120211831 | TRENCH MOSFET WITH TRENCHED FLOATING GATES IN TERMINATION - A trench MOSFET comprising multiple trenched floating gates in termination area is disclosed. The trenched floating gates have trench depth equal to or deeper than body junction of body regions in active area. The trench MOSFET further comprise an EPR surrounding outside the multiple trenched floating gates in the termination area. | 08-23-2012 |
20120261737 | TRENCH MOSFET WITH TRENCHED FLOATING GATES AND TRENCHED CHANNEL STOP GATES IN TERMINATION - A trench MOSFET comprising multiple trenched floating gates in termination area is disclosed. The trenched floating gates have trench depth equal to or deeper than body junction of body regions in active area The trench MOSFET further comprises at least one trenched channel stop gate around outside of the trenched floating gates and connected to at least one sawing trenched gate extended into scribe line for prevention of leakage path formation between drain and source regions. | 10-18-2012 |
20120292694 | HIGH SWITCHING TRENCH MOSFET - A shielded gate trench metal oxide semiconductor filed effect transistor (MOSFET) having high switching speed is disclosed. The inventive shielded gate trench MOSFET includes a shielded electrode spreading resistance placed between a shielded gate electrode and a source metal to enhance the performance of the shielded gate trench MOSFET by adjusting doping concentration of poly-silicon in gate trenches to a target value. Furthermore, high cell density is achieved by employing the inventive shielded gate trench MOSFET without requirement of additional cost. | 11-22-2012 |
20130001684 | METHOD OF MANUFACTURING TRENCH MOSFET USING THREE MASKS PROCESS HAVING TILT- ANGLE SOURCE IMPLANTS - In according with the present invention, a semiconductor device is formed as follows. A contact insulation layer is deposited on the top surface of said silicon layer. A contact mask is applied and following with a dry oxide etching to remove the contact insulation layer from contact open areas. The silicon layer is tilt-angle implanted with a source dopant through the contact open areas and the source dopant is diffused to form source regions, thereby a source mask is saved. A dry silicon etch is carried out to form trenched source-body contacts in the contact open areas, penetrating through the source regions and extending into the body regions. | 01-03-2013 |
20130020576 | SHIELDED GATE MOSFET-SCHOTTKY RECTIFIER-DIODE INTEGRATED CIRCUITS WITH TRENCHED CONTACT STRUCTURES - A trench shielded gate MOSFET device with embedded Schottky rectifier, Gate-Drain and Gate-Source clamp diodes on single chip is formed to achieve device shrinkage, lower cost and improved performance. The present semiconductor device achieve low Vf and reverse leakage current for embedded Schottky rectifier, having over-voltage protection and avalanche protection between gate and source and between gate and drain. | 01-24-2013 |
20130020577 | MOSFET-SCHOTTKY RECTIFIER-DIODE INTEGRATED CIRCUITS WITH TRENCH CONTACT STRUCTURES - A trench MOSFET device with embedded Schottky rectifier, Gate-Drain and Gate-Source clamp diodes on single chip is formed to achieve device shrinkage and performance improvement. The present semiconductor devices achieve low Vf and reverse leakage current for embedded Schottky rectifier, have overvoltage protection for Gate-Source clamp diode and avalanche protection for Gate-Drain clamp diode. | 01-24-2013 |
20130075809 | SEMICONDUCTOR POWER DEVICE WITH EMBEDDED DIODES AND RESISTORS USING REDUCED MASK PROCESSES - A trench semiconductor power device integrated with a Gate-Source and a Gate-Drain clamp diodes without using source mask is disclosed, wherein a plurality source regions of a first conductivity type of the trench semiconductor device and multiple doped regions of the first conductivity type of the clamp diodes are formed simultaneously through contact open areas defined by a contact mask. | 03-28-2013 |
20130075810 | SEMICONDUCTOR POWER DEVICES INTEGRATED WITH A TRENCHED CLAMP DIODE - A semiconductor power device having shielded gate structure integrated with a trenched clamp diode formed in a semiconductor silicon layer, wherein the shielded gate structure comprises a shielded electrode formed by a first poly-silicon layer and a gate electrode formed by a second poly-silicon layer. The trenched clamp diode is formed by the first poly-silicon layer. A shielded gate mask used to define the shielded gate is also used to define the trenched clamp diode. Therefore, one poly-silicon layer and a mask for the trenched clamp diode are saved. | 03-28-2013 |
20130092976 | A SEMICONDUCTOR POWER DEVICE INTEGRATRED WITHIMPROVED GATE SOURCE ESD CLAMP DIODES - A trench semiconductor power device integrated with four types of ESD clamp diodes for optimization of total perimeter of the ESD clamp diodes, wherein the ESD clamp diodes comprise multiple back to back Zener diodes with alternating doped regions of a first conductivity type next to a second conductivity type, wherein each of the doped regions has a closed ring structure. | 04-18-2013 |
20130113038 | TRENCH MOSFET WITH SPLIT TRENCHED GATE STRUCTURES IN CELL CORNERS FOR GATE CHARGE REDUCTION - A trench MOSFET with closed cells having split trenched gates structure in trenched gates intersection area in cell corner is disclosed. The invented split trenched gates structure comprises an insulation layer between said split trenched gates with thick thermal oxide layer in center portion of the trenched gates intersection area, therefore further reducing Qgd of the trench MOSFET without increasing additional Rds. | 05-09-2013 |
20130168731 | SEMICONDUCTOR POWER DEVICE HAVING WIDE TERMINATION TRENCH AND SELF-ALIGNED SOURCE REGIONS FOR MASK SAVING - A trench semiconductor power device with a termination area structure is disclosed. The termination area structure comprises a wide trench and a trenched field plate formed not only along trench sidewall but also on trench bottom of the wide trench by doing poly-silicon CMP so that the body ion implantation is blocked by the trenched field plate on the trench bottom to prevent the termination area underneath the wide trench from being implanted. Moreover, a contact mask is used to define both trenched contacts and source regions of the device for saving a source mask. | 07-04-2013 |
20130168760 | TRENCH MOSFET WITH RESURF STEPPED OXIDE AND DIFFUSED DRIFT REGION - A trench MOSFET with split gates and diffused drift region for on-resistance reduction is disclosed. Each of the split gates is symmetrically disposed in the middle of the source electrode and adjacent trench sidewall of a deep trench. The inventive structure can save a mask for definition of the location of the split gate electrodes. Furthermore, the fabrication method can be implemented more reliably with lower cost. | 07-04-2013 |
20130168761 | SEMICONDUCTOR POWER DEVICE HAVING IMPROVED TERMINATION STRUCTURE FOR MASK SAVING - A improved termination structure for semiconductor power devices is disclosed, comprising a trenched field plate formed not only along trench sidewall but also on trench bottom of the wide termination trench by doing poly-silicon CMP so that body ion implantation is blocked by the trenched field plate on the trench bottom to prevent a body region formation underneath the trench bottom of the wide termination trench, degrading avalanche voltage. | 07-04-2013 |
20130168764 | TRENCH SEMICONDUCTOR POWER DEVICE HAVING ACTIVE CELLS UNDER GATE METAL PAD - A trench semiconductor power device having active cells under gate metal pad to increase total active area for lowering on-resistance is disclosed. The gate metal pad is not only for gate wire bonding but also for active cells disposition. Therefore, the device die can be shrunk so that the number of devices per wafer is increased for die cost reduction. Moreover, the device can be packaged into smaller type package for further cost reduction. | 07-04-2013 |
20130207172 | TRENCH MOSFET HAVING A TOP SIDE DRAIN - This invention discloses a trench MOSFET comprising a top side drain region in a wide trench in a termination area besides a BV sustaining area, wherein said top side drain comprises a top drain metal connected to an epitaxial layer and a substrate through a plurality of trenched drain contacts, wherein the wide trench is formed simultaneously when a plurality of gate trenches are formed in an active area, and the trenched drain contacts are formed simultaneously when a trenched source-body contact is formed in the active area. | 08-15-2013 |
20130234237 | SEMICONDUCTOR POWER DEVICE INTEGRATED WITH CLAMP DIODES HAVING DOPANT OUT-DIFFUSION SUPPRESSION LAYERS - A semiconductor power device integrated with clamp diodes is disclosed by offering dopant out-diffusion suppression layers to enhance the ESD protection between gate and source, and avalanche capability between drain and source. | 09-12-2013 |
20130234238 | SEMICONDUCTOR POWER DEVICE INTEGRATED WITH ESD PROTECTION DIODES - A semiconductor power device integrated with ESD protection diode is disclosed by offering a dopant out-diffusion suppression layers prior to source dopant activation or diffusion to enhance ESD protection capability between gate and source. | 09-12-2013 |
20130256786 | TRENCH MOSFET WITH SHIELDED ELECTRODE AND AVALANCHE ENHANCEMENT REGION - A trench MOSFET with shielded electrode and improved avalanche enhancement region is disclosed. The inventive structure can achieve a better avalanche capability by applying an improved avalanche enhancement region having a same doping concentration as the epitaxial layer where said trench MOSFET is formed without increasing Rds. | 10-03-2013 |
20130299901 | TRENCH MOSFET STRUCTURES USING THREE MASKS PROCESS - A trench MOSFET comprising a plurality of trenched gates surrounded by source regions encompassed in body regions in active area. A plurality of trenched source-body contact structure penetrating through the source regions and extending into the body regions, are filled with tungsten plugs padded with a Ti layer, a first and a second TiN layer, wherein the second TiN layer is deposited after Ti silicide formation to avoid W spiking occurrence. | 11-14-2013 |
20130307066 | TRENCH MOSFET WITH TRENCHED FLOATING GATES HAVING THICK TRENCH BOTTOM OXIDE AS TERMINATION - A semiconductor power device with trenched floating gates having thick bottom oxide as termination is disclosed. The gate charge is reduced by forming a HDP oxide layer padded by a thermal oxide layer on trench bottom and a top surface of mesa areas between adjacent trenched gates. Therefore, only three masks are needed to achieve the device structure. | 11-21-2013 |
20130330892 | TRENCH MOSFET WITH TRENCHED FLOATING GATES HAVING THICK TRENCH BOTTOM OXIDE AS TERMINATION - A power semiconductor power device having composite trench bottom oxide and multiple trench floating gates is disclosed. The gate charge is reduced by forming a pad oxide surrounding a HDP oxide on trench bottom. The multiple trenched floating gates are applied in termination for saving body mask. | 12-12-2013 |
20140048872 | AVALANCHE CAPABILITY IMPROVEMENT IN POWER SEMICONDUCTOR DEVICES USING THREE MASKS PROCESS - A power semiconductor device with improved avalanche capability is disclosed by forming at least one avalanche capability enhancement doped region underneath an ohmic contact doped region. Moreover, a source mask is saved by using three masks process and the avalanche capability is further improved. | 02-20-2014 |
20140077290 | TRENCH METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH EMBEDDED SCHOTTKY RECTIFIER USING REDUCED MASKS PROCESS - A trench MOSFET with embedded schottky rectifier having at least one anti-punch through implant region using reduced masks process is disclosed for avalanche capability enhancement and cost reduction. The source regions have a higher doping concentration and a greater junction depth along sidewalls of the trenched source-body contacts than along adjacent channel regions near the gate trenches. | 03-20-2014 |
20140103426 | TRENCH METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH MULTIPLE TRENCHED SOURCE-BODY CONTACTS FOR REDUCING GATE CHARGE - A trench MOSFET with multiple trenched source-body contacts is disclosed for reducing gate charge by applying multiple trenched source-body contacts in unit cell. Furthermore, source regions are only formed along channel regions near the gate trenches, not between adjacent trenched source-body contacts for UIS (Unclamped Inductance Switching) current enhancement. | 04-17-2014 |
20140120672 | TRENCH MOSFET HAVING A TOP SIDE DRAIN - This invention discloses a trench MOSFET comprising a top side drain region in a wide trench in a termination area besides a BV sustaining area, wherein said top side drain comprises a top drain metal connected to an epitaxial layer and a substrate through a plurality of trenched drain contacts, wherein the wide trench is formed simultaneously when a plurality of gate trenches are formed in an active area, and the trenched drain contacts are formed simultaneously when a trenched source-body contact is formed in the active area. | 05-01-2014 |
20140159149 | SHORT CHANNEL TRENCH MOSFETS - A trench MOSFET with a short channel length is disclosed for reducing channel resistance, wherein at least one field relief region is formed underneath the body region in an epitaxial layer between every two adjacent gate trenches and self-aligned with a trenched source-body contact for prevention of drain/source punch-through issue. | 06-12-2014 |
20140213026 | TRENCH METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH EMBEDDED SCHOTTKY RECTIFIER USING REDUCED MASKS PROCESS - A trench MOSFET with embedded schottky rectifier having at least one anti-punch through implant region using reduced masks process is disclosed for avalanche capability enhancement and cost reduction. The source regions have a higher doping concentration and a greater junction depth along sidewalls of the trenched source-body contacts than along adjacent channel regions near the gate trenches. | 07-31-2014 |
20140291753 | TRENCH MOSFET STRUCTURE HAVING SELF-ALIGNED FEATURES FOR MASK SAVING AND ON-RESISTANCE REDUCTION - A trench MOSFET structure having self-aligned features for mask saving and on-resistance reduction is disclosed, wherein the source region is formed by performing source Ion Implantation through contact opening of a contact interlayer, and further source diffusion. A dielectric sidewall spacer is formed on sidewalls of the contact interlayer in the contact open areas to define trenched source-body contacts for on-resistance reduction and avalanche capability improvement. | 10-02-2014 |
20140346593 | SUPER-JUNCTION TRENCH MOSFETS WITH SHORT TERMINATIONS - A super-junction trench MOSFET with a short termination area is disclosed, wherein the short termination area comprising a charge balance region and a channel stop region formed near a top surface of an epitaxial layer with a trenched termination contact penetrating therethrough. | 11-27-2014 |
20150037954 | SUPER-JUNCTION TRENCH MOSFETS WITH SHORT TERMINATIONS - A super-junction trench MOSFET with a short termination area is disclosed, wherein the short termination area comprising a charge balance region and a channel stop region formed near a top surface of an epitaxial layer with a trenched termination contact penetrating therethrough. | 02-05-2015 |
20150076594 | SUPER-JUNCTION STRUCTURES HAVING IMPLANTED REGIONS SURROUNDING AN N EPITAXIAL LAYER IN DEEP TRENCH - A super junction structure having implanted column regions surrounding an N epitaxial layer in a deep trench is disclosed to overcome charge imbalance problem and to further reduce Rds. The inventive super junction can be used for MOSFET and Schottky rectifier. | 03-19-2015 |