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Fu-Chieh
Fu-Chieh Hsiao, Chiayi City TW
| Patent application number | Description | Published |
|---|---|---|
| 20090111071 | Method for designing a digital abutment for dental implant - A method for designing a digital abutment for a dental implant includes the steps of: a) implant planning where implant planning is initiated based on digital data obtained from the patient and loaded into a computer system to enable an implant fixture to be implanted at the implant site in the best position, b) establishment of digital reference abutment where a digital reference abutment is established at the implant site and positioned on the implant fixture, c) adjustment of the digital reference abutment where the digital reference abutment has a subgingival part and a supragingival part at the top side of the subgingival part, and the angle between the subgingival part and the supragingival part is adjusted based on the best prosthesis position, and d) finish of digital abutment where the digital reference abutment becomes a digital abutment for placement after the adjustment. | 04-30-2009 |
Fu-Chieh Hsiao, Chiai City TW
| Patent application number | Description | Published |
|---|---|---|
| 20090092946 | Method of generating a digital supplementary device for dental implant planning - A method of generating a digital supplementary device for dental implantation by: preparing a mouth model based on the internal shape of the oral cavity of the patient; performing a 3D scan to obtain digital model of the mouth model, the digital model of the patient's oral cavity and the digital model of the tooth model; defining the digital models as the “positioning object,” “the reference object” and the “attached positioning object”; obtaining characteristic points after joining the positioning object and the attached positioning object and positioning the positioning object and the reference object based on the characteristic points; and then outputting the attached positioning object with the positioning data obtained after positioning of the attached positioning object. The output thus obtained is the desired digital supplementary device for dental implant planning. | 04-09-2009 |
Fu-Chieh Hsu, Hsinchu TW
| Patent application number | Description | Published |
|---|---|---|
| 20080283963 | Electrical Fuse Circuit for Security Applications - A fuse circuit is disclosed, which comprises at least one electrical fuse element having a resistance that changes after being stressed in an electromigration mode, a switching device serially coupled with the electrical fuse element in a predetermined path between a fuse programming power supply (VDDQ) and a low voltage power supply (GND) for selectively allowing a programming current passing through the electrical fuse element during a programming operation, and at least one peripheral circuit coupled to the VDDQ, wherein the peripheral circuit is active and draws current from the VDDQ during a fuse programming operation. | 11-20-2008 |
| 20100329061 | ELECTRICAL FUSE CIRCUIT FOR SECURITY APPLICATIONS - A fuse circuit is disclosed, which comprises at least one electrical fuse element having a resistance that changes after being stressed in an electromigration mode, a switching device serially coupled with the electrical fuse element in a predetermined path between a fuse programming power supply (VDDQ) and a low voltage power supply (GND) for selectively allowing a programming current passing through the electrical fuse element during a programming operation, and at least one peripheral circuit coupled to the VDDQ, wherein the peripheral circuit is active and draws current from the VDDQ during a fuse programming operation. | 12-30-2010 |
Fu-Chieh Tsai, Taipei TW
| Patent application number | Description | Published |
|---|---|---|
| 20090236217 | CAPILLARITRON ION BEAM SPUTTERING SYSTEM AND THIN FILM PRODUCTION METHOD - A capillaritron ion beam sputtering system and a thin film production method are disclosed. By utilizing reactive capillaritron ion beam sputtering deposition, argon and oxygen are passed through a capillaritron ion source simultaneously. Argon is being ionized and accelerated by a voltage to bombard a zinc target and create zinc atoms, while oxygen atoms are created at the same time. Zinc atom and oxygen atom are combined to form ZnO to deposit on a substrate. The stoichiometric properties, deposition rate, transmission properties, surface roughness and film density of the as-deposited film can be altered by adjusting capillaritron ion beam energy and oxygen partial pressure. Using preferred processing parameters, the root-mean-square surface roughness of the as-deposited film can be smaller than 1.5 nm, while the transmission coefficient at visible range can be greater than 80%. | 09-24-2009 |