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Fronheiser, US
Dennis R. Fronheiser, Rochester, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20090052964 | ELECTROSTATOGRAPHIC APPARATUS HAVING IMPROVED TRANSPORT MEMBER - The present invention is an electrostatographic reproduction apparatus which includes a primary imaging member for producing an electrostatic latent image on a receiver, a development station for applying toner particles to said latent image which forms a developed toner image on the receiver. A fuser assembly is included for fixing the developed toner image, to form a fused toner image on the receiver. A transport member is provided for transporting the receiver to or from the fuser assembly, the transport member having a substrate bearing an oil-absorbing layer that includes transparent alumina inorganic particles of siloxane coated gamma-alumina, dispersed in an organic binder, and a fluorosurfactant. | 02-26-2009 |
Dennis Roland Fronheiser, Rochester, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20100199649 | APPARATUS FOR REMOVING SOOT FROM DIESEL ENGINE EXHAUST STREAMS AT TEMPERATURES AT OR BELOW 150.degree. C - An apparatus for removing soot from diesel engine exhaust streams at temperatures below 150° C. is provided. Although the use of particulate filters for removing carbonaceous soot from such exhaust streams is known, such systems are either active or operate under high temperatures, i.e. in excess of 300° C. The claimed apparatus includes a flow through support device composed of ceramic, such as cordierite or silicon carbide, or a primarily nonferrous metal or stainless steel and coated with an oxide formation comprising hematite and bixbyite in a ratio from 1:1 to 9:1. The claimed apparatus can also include a diesel particulate filter coated with a coating comprising tin, aluminum and zirconium oxides prepared by a co-precipitation process and thereafter coated with platinum or other precious metal. | 08-12-2010 |
| 20110120087 | Apparatus with Catalyst for the Reduction of Nitrogen Dioxide (NO2) to Nitric Oxide (NO) by Chemical Means in a Diesel Catalytic Support - In setting tighter emissions standards for nitrogen oxides, legislative bodies limit the amount of nitrogen dioxide (NO | 05-26-2011 |
Jody Fronheiser, Selkirk, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20100108132 | NANO-DEVICES AND METHODS OF MANUFACTURE THEREOF - Disclosed herein is a nanodevice. Disclosed herein too is a method of manufacturing a nanodevice. In one embodiment the nanodevice includes a first substrate; a second substrate; a nanowire; the nanowire contacting the first substrate and the second substrate; the nanowire comprising a metal, a semi-conductor or a combination thereof. | 05-06-2010 |
Jody Alan Fronheiser, Selkirk, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20090194772 | Method For Fabricating Silicon Carbide Vertical MOSFET Devices - A method of forming a vertical MOSFET device includes forming a first trench within a semiconductor layer of a first polarity, the first trench generally defining a well region of a second polarity opposite the first polarity; growing a first epitaxial well layer of the second polarity over the original semiconductor layer; growing a second epitaxial source contact layer of the first polarity over the well layer; forming a second trench through the source contact layer and at least a portion of the well layer; growing a third epitaxial layer of the second polarity over the source contact layer; and planarizing at least the first and second epitaxial layers so as to expose an upper surface of the original semiconductor layer, wherein a top surface of the third epitaxial layer is substantially coplanar with a top surface of the source contact layer prior to ohmic contact formation. | 08-06-2009 |
| 20090267141 | METHOD FOR FABRICATING SILICON CARBIDE VERTICAL MOSFET DEVICES - A method of forming a vertical MOSFET device includes forming a trench within a drift layer substrate, the drift layer comprising a first polarity type, the trench generally defining a well region of a second polarity type opposite the first polarity type. An ohmic contact layer is formed within a bottom surface of the trench, the ohmic contact layer comprising a material of the second polarity type. A layer of the second polarity type is epitaxially grown over the drift layer, sidewall surfaces of the trench, and the ohmic contact layer. A layer of the first polarity type is epitaxially grown over the epitaxially grown layer of the second polarity type so as to refill the trench, and the epitaxially grown layers of the first and second polarity type are planarized so as to expose an upper surface of the drift layer substrate. | 10-29-2009 |
| 20100093116 | DIMENSION PROFILING OF SIC DEVICES - There is provided a method for dimension profiling of a semiconductor device. The method involves incorporating a feature comprising a detectable element into the device, and thereafter detecting the detectable element to determine a dimension of the feature. This information can be used for the determination of a dimension of buried channels, and also for end-point detection of CMP processes. | 04-15-2010 |
| 20100140730 | SEMICONDUCTOR DEVICES AND SYSTEMS - A semiconductor device is disclosed. The semiconductor device comprises, a first region of a first conductivity type, a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure, a resistance modification region of the second conductivity type, and a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region. | 06-10-2010 |
Matthew P. Fronheiser, Washington, DC US
| Patent application number | Description | Published |
|---|---|---|
| 20100272777 | OCULAR THERAPEUTIC AGENT DELIVERY DEVICES AND METHDOS FOR MAKING AND USING SUCH DEVICES - Ocular implant devices ( | 10-28-2010 |