Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Froment, FR
Benoit Froment, Grenode FR
| Patent application number | Description | Published |
|---|---|---|
| 20080278886 | Increasing the capacitance of a capacitive device by micromasking - Capacitive coupling devices and methods of fabricating a capacitive coupling device are disclosed. The coupling device could include a stack of layers forming electrodes and at least one insulator. The insulator could include a a region of doped silicon. The silicon could be doped with a species selected from Ce, Cr, Co, Cu, Dy, Er, Eu, Ho, Ir, Li, Lu, Mn, Pr, Rb, Sm, Sr, Tb, Tm, Yb, Y, Ac, Am, Ba, Be, Cd, Gd, Fe, La, Pb, Ni, Ra, Sc, Th, Hf, Tl, Sn, Np, Rh, U, Zn, Ag, and Yb in relief and forming roughnesses relative to the neighbouring regions of the same level in the stack. The electrodes and the insulator form conformal layers above the doped silicon region. | 11-13-2008 |
Benoit Froment, Crolles FR
| Patent application number | Description | Published |
|---|---|---|
| 20080197498 | Gate Electrode Silicidation Process - A fully-silicided gate electrode is formed from silicon and a metal by depositing at least two layers of silicon with the metal layer therebetween. One of the silicon layers may be amorphous silicon whereas the other silicon layer may be polycrystalline silicon. The silicon between the metal layer and the gate dielectric may be deposited in two layers having different crystallinities. This process enables greater control to be exercised over the phase of the silicide resulting from this silicidation process. | 08-21-2008 |
Benoît Froment, Grenoble FR
| Patent application number | Description | Published |
|---|---|---|
| 20110095381 | Gate structure and method for making same - A MOS transistor having its gate successively comprising an insulating layer, a metal silicide layer, a layer of a conductive encapsulation material, and a polysilicon layer. | 04-28-2011 |
Benoît Froment, Grenoble FR
| Patent application number | Description | Published |
|---|---|---|
| 20110095381 | Gate structure and method for making same - A MOS transistor having its gate successively comprising an insulating layer, a metal silicide layer, a layer of a conductive encapsulation material, and a polysilicon layer. | 04-28-2011 |
Thomas Froment, Longpont Sur Orge FR
| Patent application number | Description | Published |
|---|---|---|
| 20080307069 | USE OF A PREFIX HASH TABLE (PHT) FOR LOCATING SERVICES WITHIN A PEER-TO-PEER COMMUNICATION NETWORK - A communication network (NET) including a distributed hash table (DHT) whose nodes (X | 12-11-2008 |
| 20090103540 | Method for address translation device traversal for SIP signaling messages through temporary use of the TCP transport protocol - A method for establishing a communication session between a first client (C | 04-23-2009 |
| 20090157887 | Control for the interface for sending an SIP reply message - In one embodiment a communication client, includes at least one sending interface to send a signaling message in accordance with the SIP protocol, towards a first interface of a communication server. The client and server are connected by a communication network. The communication client is suitable for inserting an indication within the signaling message regarding the interface for the communication server to use to send its response signaling message. | 06-18-2009 |
| 20090310611 | Method and device for communication between multiple sockets | 12-17-2009 |
| 20100023627 | Call setup and control by third-party device - Method for setting up a communication session (SM) between two communication agents (A, B), triggered by the reception of an event (S) by a third-party communication element (C). Following the reception of this event, the third-party element sends the first of the two agents (A) a signalling message (M | 01-28-2010 |