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Friel
David Friel, Linz AT
| Patent application number | Description | Published |
|---|---|---|
| 20110266027 | CABLE LAYER OF MODIFIED SOFT POLYPROPYLENE WITH IMPROVED STRESS WHITENING RESISTANCE - Cable layer comprising a propylene polymer composition comprising (a) a polypropylene (A) (b) an elastomeric copolymer (E) comprising units derived from propylene and ethylene and/or C4 to C20 α-olefin and (c) a polar ethylene polymer (C) wherein the cable layer and/or the propylene polymer composition has a gel content of equal or more than 0.20 wt.-%. | 11-03-2011 |
Fionnan Friel, Co. Galway IE
| Patent application number | Description | Published |
|---|---|---|
| 20100063573 | DELIVERY SYSTEM FOR ENDOLUMINAL IMPLANT - A delivery system for delivering an endoluminal implant to a distal deployment location inside a body lumen from a proximal access location outside the lumen. The system comprises the implant, a catheter, and a slidable sheath having an advanced position in which the sheath covers the implant and a retracted position in which the implant is exposed. The catheter comprises a stabilizer having a distal end adjacent the implant proximal end and/or a catheter tip attached to a central core slideably disposed relative to the implant and having a proximal end adjacent the implant distal end. The catheter tip proximal end and/or the stabilizer distal end comprises a docking section adapted to releasably engage a portion of the implant. Each docking section has an engagement geometry comprising a flared engagement surface that extends inside a short axial length of the implant or a pocket having a bottleneck geometry. | 03-11-2010 |
Ian Friel, Surrey GB
| Patent application number | Description | Published |
|---|---|---|
| 20100015438 | HIGH COLOUR DIAMOND LAYER - A method of producing CVD diamond having a high colour, which is suitable for optical applications, for example. The method includes adding a gaseous source comprising a second impurity atom type to counter the detrimental effect on colour caused by the presence in the CVD synthesis atmosphere of a first impurity atom type. The described method applies to the production of both single crystal diamond and polycrystalline diamond. | 01-21-2010 |
Ian Friel, Guildford Surrey GB
| Patent application number | Description | Published |
|---|---|---|
| 20090127506 | HIGH CRYSTALLINE QUALITY SYNTHETIC DIAMOND - The invention relates to a single crystal CVD diamond material, wherein the extended defect density as characterised by X-ray topography is less than 400/cm2 over an area of greater than 0.014 cm2. The invention further relates to a method for producing a CVD single crystal diamond material according to any preceding claim comprising the step of selecting a substrate on which to grow the CVD single crystal diamond, wherein the substrate has at least one of a density of extended defects as characterised by X-ray topography of less than 400/cm2 over an area greater than 0.014 cm2; an optical isotropy of less than 1×10-5 over a volume greater than 0.1 mm3; and a FWHM X-ray rocking curve width for the (004) reflection of less than 20 arc seconds. | 05-21-2009 |
Ian Friel, Guildford GB
| Patent application number | Description | Published |
|---|---|---|
| 20110176563 | CVD SINGLE CRYSTAL DIAMOND MATERIAL - Single crystal diamond material produced using chemical vapour deposition (CVD), and particularly diamond material having properties suitable for use in optical applications such as lasers, is disclosed. In particular, a CVD single crystal diamond material having preferred characteristics of longest linear internal dimension, birefringence and absorption coefficient, when measured at room temperature, is disclosed. Uses of the diamond material, including in a Raman laser, and methods of producing the diamond are also disclosed. | 07-21-2011 |
Ian Friel, Berkshire GB
| Patent application number | Description | Published |
|---|---|---|
| 20100038653 | DIAMOND ELECTRONIC DEVICES AND METHODS FOR THEIR MANUFACTURE - The present invention relates to a diamond electronic device comprising a functional interface between two solid materials, wherein the interface is formed by a planar first surface of a first layer of single crystal diamond and a second layer formed on the first surface of the first diamond layer, the second layer being solid, non-metallic and selected from diamond, a polar material and a dielectric material, and wherein the planar first surface of the first layer of single crystal diamond has an Rq of less than 10 nm and has at least one of the following characteristics: (a) the first surface is an etched surface; (b) a density of dislocations in the first diamond layer breaking the first surface is less than 400 cm | 02-18-2010 |
| 20100047519 | PLASMA ETCHING OF DIAMOND SURFACES - The present invention relates to a method of producing a diamond surface including the steps of providing an original diamond surface, subjecting the original diamond surface to plasma etching to remove at least 2 nm of material from the original surface and produce a plasma etched surface, the roughness R | 02-25-2010 |
| 20100078651 | ELECTRONIC FIELD EFFECT DEVICES AND METHODS FOR THEIR MANUFACTURE - Electronic field effect devices, and methods of manufacture of these electronic field effect devices are disclosed. In particular, there is disclosed an electronic field effect device which has improved electrical properties due to the formation of a highly mobile two-dimensional charge-carrier gas in a simple structure formed from diamond in combination with polar materials. | 04-01-2010 |
| 20100078652 | DIAMOND ELECTRONIC DEVICES INCLUDING A SURFACE AND METHODS FOR THEIR MANUFACTURE - The present invention relates to a diamond electronic device comprising a functional surface formed by a planar surface of a single crystal diamond, the planar surface of the single crystal diamond having an Rq of less than 10 nm and at least one of the following characteristics: (a) the surface has not been mechanically processed since formation by synthesis; (b) the surface is an etched surface; (c) a density of dislocations in the diamond breaking the surface is less than 400 cm″2 measured over an area greater than 0.014 cm2; (d) the surface has an Rq less than 1 nm; (e) the surface has regions with a layer of charge carriers immediately below it, such that the regions of the surface are normally termed conductive, such as a hydrogen terminated {100} diamond surface region; (f) the surface has regions with no layer of charge carriers immediately below it, such that these regions of the surface are normally termed insulating, such as an oxygen terminated {100} diamond surface; and (g) the surface has one or more regions of metallization providing electrical contact to the diamond surface beneath these regions. | 04-01-2010 |
James Friel, Winnipeg CA
| Patent application number | Description | Published |
|---|---|---|
| 20100063127 | Antioxidant Properties of Tryptophan from Human Milk - As tryptophan is not available in sufficient amounts in infant formula or other replacement milks, we describe herein the supplementation of these milks to attain a Trp concentration similar to that of human milk. Such supplemented milks provide greater protection against free radicals. | 03-11-2010 |
Owen Friel, Kildare IE
| Patent application number | Description | Published |
|---|---|---|
| 20100077082 | Method of Operating A Contact Center - Some known Contact Centers rely on a Network Level Router to determine which of a number of available Contact Centers should deal with a given contact. This decision is made by the NLR based on real time information provided by the Contact Centers. However, the format of such information is proprietary which means that the NLR must translate and collate this information. This invention seeks to use session initiation protocol (SIP) Presence for such information transfer which enables improved decision making and further enables additional functionality to be added to the Contact Center system. The invention provides a SIP enabled Contact Center ( | 03-25-2010 |
