| Patent application number | Description | Published |
|---|
| 20080273406 | ENHANCED SRAM REDUNDANCY CIRCUIT FOR REDUCING WIRING AND REQUIRED NUMBER OF REDUNDANT ELEMENTS - A method and enhanced Static Random Access Memory (SRAM) redundancy circuit reduce wiring and the required number of redundant elements. A bitline redundancy mechanism allows the swapping of a pair of bitlines for a redundant pair of bit columns. Two of the adjacent bitlines are swapped out at a time, one even and one odd. The swap is accomplished by steering the data around the bad columns and adding redundant columns on the end that are steered in when needed. | 11-06-2008 |
| 20090185435 | Method and Circuit for Implementing Enhanced SRAM Write and Read Performance Ring Oscillator - A method and circuit for implementing an enhanced static random access memory (SRAM) read and write performance ring oscillator, and a design structure on which the subject circuit resides are provided. A plurality of SRAM base blocks is connected together in a chain. Each of the plurality of SRAM base blocks includes a SRAM cell, such as an eight-transistor (8T) static random access memory (SRAM) cell, and a local evaluation block coupled to the SRAM cell. The SRAM cell includes independent left wordline input and right wordline input. The SRAM cell includes a read wordline connected high, and a true and complement write bitline pair connected low. In the local evaluation circuit, one input of a NAND gate receiving the read bitline input is connected high. A control signal is combined with an inverted feedback signal to start and stop the ring oscillator. | 07-23-2009 |
| 20100046278 | Implementing Local Evaluation of Domino Read SRAM With Enhanced SRAM Cell Stability and Enhanced Area Usage - A method and circuit for implementing domino static random access memory (SRAM) local evaluation with enhanced SRAM cell stability, and a design structure on which the subject circuit resides are provided. A SRAM local evaluation circuit enabling a read and write operations of an associated SRAM cell group includes true and complement bitlines, true and complement write data propagation inputs, a precharge signal, and a precharge write signal. A respective precharge device is connected between a voltage supply VDD and the true bitline and the complement bitline. A first passgate device is connected between the complement bitline and the true write data propagation input. A second passgate device is connected between the true bitline and the complement write data propagation input. The precharge write signal disables the passgate devices during a read operation. During write operations, the precharge write signal enables the passgate devices. | 02-25-2010 |
| 20100188888 | Implementing Enhanced Dual Mode SRAM Performance Screen Ring Oscillator - A method and circuit for implementing an enhanced dual-mode static random access memory (SRAM) performance screen ring oscillator (PSRO), and a design structure on which the subject circuit resides are provided. The dual-mode SRAM PSRO includes a plurality of SRAM base blocks connected together in a chain. Each of the plurality of SRAM base blocks includes an eight-transistor (8T) SRAM cell, a local evaluation circuit and a logic function coupled to the SRAM cell. The eight-transistor (8T) static random access memory (SRAM) cell is an unmodified 8T SRAM cell. The dual-mode SRAM PSRO includes one mode of operation, where the output frequency is determined by write-through performance of the 8T SRAM cell; and another mode of operation, where the output frequency is determined by read performance of the 8T SRAM cell. | 07-29-2010 |
| 20100218055 | Implementing Enhanced Array Access Time Tracking With Logic Built in Self Test of Dynamic Memory and Random Logic - A method and circuit for implementing substantially perfect array access time tracking with Logic Built In Self Test (LBIST) diagnostics of dynamic memory array and random logic, and a design structure on which the subject circuit resides are provided. The dynamic memory array is initialized to a state for the longest read time for each bit and the dynamic memory array is forced into a read only mode. During LBIST diagnostics with the array in the read only mode, the array outputs are combined with the data inputs to provide random switching data on the array outputs to the random logic. | 08-26-2010 |
