Patent application number | Description | Published |
20130176775 | FINDING OPTIMAL READ THRESHOLDS AND RELATED VOLTAGES FOR SOLID STATE MEMORY - An expected value associated with stored values in solid state storage, as well as a set of three or more points are obtained where the three or more points include a voltage and a value associated with stored values. Two points having ratios closest to the expected value are selected from the set. A voltage is determined based at least in part on the selected two points and the expected value. | 07-11-2013 |
20130229867 | GENERATING SOFT READ VALUES USING BINS AND/OR MULTIPLE READS - A starting read threshold is received. A first offset and a second offset is determined. A first read is performed at the starting read threshold offset by the first offset to obtain a first hard read value and a second read is performed at the starting read threshold offset by the second offset to obtain a second hard read value. A soft read value is generated based at least in part on the first hard read value and the second hard read value. | 09-05-2013 |
20140013166 | POWER SAVING TECHNIQUES THAT USE A LOWER BOUND ON BIT ERRORS - A read back bit sequence and charge constraint information are obtained. A lower bound on a number of bit errors associated with the read back bit sequence is determined based at least in part on the read back bit sequence and the charge constraint information. The lower bound and an error correction capability threshold associated with an error correction decoder are compared. In the event the lower bound is greater than or equal to the error correction capability threshold, an error correction decoding failure is predicted and in response to the prediction a component is configured to save power. | 01-09-2014 |
20140189458 | SOFT INPUT, SOFT OUPUT MAPPERS AND DEMAPPERS FOR BLOCK CODES - A codebook which includes a plurality of messages and a plurality of codewords, a specified codeword bit value, and a specified message bit value are obtained. The LLR for bit ci in a codeword is generated, including by: identifying, from the codebook, those codewords where bit ci has the specified codeword bit value; for a message which corresponds to one of the codewords where bit ci has the specified codeword bit value, identifying those bits which have the specified message bit value; and summing one or more LLR values which correspond to those bits, in the message which corresponds to one of the codewords where bit ci has the specified codeword bit value, which have the specified message bit value. | 07-03-2014 |
20140304480 | NEIGHBOR BASED AND DYNAMIC HOT THRESHOLD BASED HOT DATA IDENTIFICATION - An address is received. One or more neighbors associated with the received address is/are determined. One or more neighboring hot metrics is/are determined for the one or more neighbors associated with the received address. A hot metric for the received address is determined based at least in part on the neighboring hot metrics. | 10-09-2014 |
20150052408 | GENERATING SOFT READ VALUES WHICH OPTIMIZE DYNAMIC RANGE - A plurality of bins and a plurality of soft read values are stored in a lookup table where those bins that are either a leftmost bin or a rightmost bin correspond to soft read values having a maximum magnitude. Bin identification information is received for a cell in solid state storage. A soft read value is generated for the cell in solid state storage, including by: accessing the lookup table, mapping the received bin identification information to one of the plurality of bins in the lookup table, and selecting the soft read value in the lookup table that corresponds to the bin which is mapped to. | 02-19-2015 |
20150078084 | GENERATING READ THRESHOLDS USING GRADIENT DESCENT AND WITHOUT SIDE INFORMATION - A first bit position of a cell in solid state storage is read where a sorting bit is obtained using the read of the first bit position. A second bit position of the cell is read for a first time, including by setting a first read threshold associated with the second bit position to a first value and setting a second read threshold associated with the second bit position to a second value. The second bit position of the cell is read for a second time, including by setting the first read threshold to a third value and setting the second read threshold to a fourth value. A new value for the first read threshold and for the second read threshold is generated using the sorting bit, the first read, and the second read. | 03-19-2015 |
20150085572 | STORAGE OF READ THRESHOLDS FOR NAND FLASH STORAGE USING LINEAR APPROXIMATION - A first read threshold associated with a first page in a block and a second read threshold associated with a second page in the block are received, where the first page has a first page number and the second page has a second page number. A slope and a y intercept are determined based at least in part on the first read threshold, the second read threshold, the first page number, and the second page number. The slope and the y intercept are stored with a block identifier associated with the block. | 03-26-2015 |