Patent application number | Description | Published |
20090188718 | METHODS OF DETECTING, PREVENTING, AND REMEDIATING LOST CIRCULATION - A method for planning a wellbore, the method including defining drilling data for drilling a segment of a planned wellbore and identifying a risk zone in the segment. Additionally, the method including determining an expected fluid loss for the risk zone and selecting a solution to reduce fluid loss in the risk zone. Furthermore, a method for treating drilling fluid loss at a drilling location, the method including calculating a drilling fluid loss rate at the drilling location, classifying the drilling fluid loss based on the drilling fluid loss rate, and selecting a solution based at least in part on the classifying. | 07-30-2009 |
20100283492 | AUTOMATED ELECTRICAL STABILITY METER - A method for automatically measuring a property of a fluid associated with a drilling application, including obtaining a sample of the fluid, wherein the sample of the fluid is obtained by directing the fluid through an electrode probe assembly comprising an electrode probe and depositing the fluid in a probe gap between electrodes of the electrode probe, ramping up a voltage applied to the electrodes of the electrode probe until a threshold current is obtained, recording the breakdown voltage at the threshold current value, and using the breakdown voltage to compute the property of the sample of the fluid. | 11-11-2010 |
20100313645 | TEST PROCEDURE TO DETERMINE CONCENTRATION AND RELATIVE DISTRIBUTION OF SIZED PARTICLES IN A DRILLING FLUID - A method of determining a particle size distribution in a wellbore fluid including collecting a volume of mud from a vibratory separator, sampling a volume of the collected mud, and testing the volume of collected mud with a test kit to determine the concentration of a sized additive in the mud is disclosed. A system for determining particle size distribution of a fluid, the system including a vibratory separator, a meter configured to receive a separated material from the vibratory separator, a counter configured to count the number of loads collected by the meter, a test kit including a sieve and a measuring tube, and a centrifuged configured to receive the measuring tube is also disclosed. | 12-16-2010 |
20110088898 | PRODUCING GASEOUS HYDROCARBONS FROM HYDRATE CAPPED RESERVOIRS - A method for recovering gas from a subterranean formation having a hydrate deposit located therein and a gas reservoir located under the hydrate deposit that includes injecting a hydrate-forming fluid into an upper region of the gas reservoir neighboring the hydrate deposit; and producing gaseous hydrocarbons from a lower region of the gas reservoir is disclosed. | 04-21-2011 |
Patent application number | Description | Published |
20080232002 | MRAM TUNNEL BARRIER STRUCTURE AND METHODS - A magnetic tunnel junction (MTJ) structure is of the type having a tunnel barrier positioned between a fixed ferromagnetic layer and a free ferromagnetic layer, the tunnel barrier includes a first barrier layer contacting either the fixed ferromagnetic layer or the free ferromagnetic layer. The first barrier layer transmits a high spin polarization and is selected from the group consisting of metal oxides, metal nitrides, and metal oxynitrides. The second barrier layer, which contacts the first barrier layer, has a low barrier height and is selected from the group consisting of metal oxides, metal nitrides, and metal oxynitrides. | 09-25-2008 |
20080258247 | SPIN-TRANSFER MRAM STRUCTURE AND METHODS - A spin-transfer MRAM bit includes a free magnet layer positioned between a pair of spin polarizers, wherein at least one of the spin polarizers comprises an unpinned synthetic antiferromagnet (SAF). The SAF may include two antiparallel fixed magnet layers separated by a coupling layer. To improve manufacturability, the layers of the SAF may be non-symmetrical (e.g., having different thicknesses or different inherent anisotropies) to assist in achieving proper alignment during anneal. The total magnetic moment of the SAF may be greater than that of the free magnet layer. | 10-23-2008 |
20090085058 | ELECTRONIC DEVICE INCLUDING A MAGNETO-RESISTIVE MEMORY DEVICE AND A PROCESS FOR FORMING THE ELECTRONIC DEVICE - A process of forming an electronic device can include forming a stack including a tunnel barrier layer. The tunnel barrier layer can have a ratio of the metal atoms to oxygen atoms of greater than a stoichiometric ratio, wherein the ratio has a particular value. The process can also include forming a gettering layer having a composition capable of gettering oxygen, and depositing an insulating layer over the gettering layer. The process can further include exposing the insulating layer to a temperature of at least approximately 60° C. In one embodiment, after such exposure, a portion of the gettering layer is converted to an insulating material. In another embodiment, an electronic device can include a magnetic tunnel junction and an adjacent insulating layer lying within an opening in another insulating layer. | 04-02-2009 |
20100148167 | MAGNETIC TUNNEL JUNCTION STACK - A magnetic tunnel junction ( | 06-17-2010 |
20120122247 | ELECTRONIC DEVICE INCLUDING A MAGNETO-RESISTIVE MEMORY DEVICE AND A PROCESS FOR FORMING THE ELECTRONIC DEVICE - A process of forming an electronic device can include forming a stack including a tunnel barrier layer. The tunnel barrier layer can have a ratio of the metal atoms to oxygen atoms of greater than a stoichiometric ratio, wherein the ratio has a particular value. The process can also include forming a gettering layer having a composition capable of gettering oxygen, and depositing an insulating layer over the gettering layer. The process can further include exposing the insulating layer to a temperature of at least approximately 60° C. In one embodiment, after such exposure, a portion of the gettering layer is converted to an insulating material. In another embodiment, an electronic device can include a magnetic tunnel junction and an adjacent insulating layer lying within an opening in another insulating layer. | 05-17-2012 |