| Patent application number | Description | Published |
|---|
| 20080280435 | Producing a Covered Through Substrate Via Using a Temporary Cap Layer - The present invention relates to a method for producing a substrate with at least one covered via that electrically and preferably also thermally connects a first substrate side with an opposite second substrate side. The processing involves forming a trench on a the first substrate side remains and covering the trench with a permanent layer on top of a temporary, sacrificial cap-layer, which is decomposed in a thermal process step. The method of the invention provides alternative ways to remove decomposition products of the sacrificial cap-layer material without remaining traces or contamination even in the presence of the permanent layer This is, according to a first aspect of the invention, achieved by providing the substrate trench with an overcoat layer that has holes. The holes in the overcoat layer leave room for the removal of the decomposition products of the cap-layer material. According to the second aspect of the invention, opening the covered trench from the second substrate side and allowing the cap-layer material to be removed through that opening provides a solution. Both methods of the present invention are based on the common idea of using a temporary cap-layer even in a situation where the substrate opening is permanently covered before the removal of the temporary cap-layer | 11-13-2008 |
| 20080291601 | Integrated Capacitor Arrangement for Ultrahigh Capacitance Values - The present invention relates to an electronic device ( | 11-27-2008 |
| 20090302419 | METHOD OF MODIFYING SURFACE AREA AND ELECTRONIC DEVICE - In the method a first layer, particularly of amorphous silicon, is deposited on the surface of a substrate with trenches. Part of this surface is covered with a protective layer. The first layer is thereafter maskless removed with a dry etching treatment on the substrate surface while it is kept within the trench. | 12-10-2009 |
| 20100003827 | METHOD AND DEVICE FOR ETCHING A SUBSTRATE BY MEANS OF PLASMA - In a method and device for etching a substrate by a plasma, the plasma is generated and accelerated at substantially sub-atmospheric pressure between a cathode and an anode of a plasma source ( | 01-07-2010 |
| 20100012498 | METHOD FOR THE MANUFACTURE OF A THIN-LAYER BATTERY STACK ON A THREE-DIMENSIONAL SUBSTRATE - The invention relates to a method for the manufacture of a thin-layer battery stack on a three-dimensional substrate. The invention further relates to a thin-layer battery stack on a three-dimensional substrate obtainable by such a method. Moreover, the invention relates to a device comprising such a battery stack. The method according to the invention provides a rapid way to manufacture battery stacks on three-dimensional substrate, and the obtained products are of superior quality. | 01-21-2010 |
| 20100013060 | METHOD OF FORMING A CONDUCTIVE TRENCH IN A SILICON WAFER AND SILICON WAFER COMPRISING SUCH TRENCH - A method of forming a conductive trench such as a through-silicon-via in a silicon wafer is disclosed. The method includes depositing a mask over a wafer surface; patterning the mask to expose a portion of the wafer; exposing the wafer to a first etching step in which a first portion of the trench is formed; exposing the wafer to an second etching step in which a tapered second portion of the trench is formed, where the first portion has a continuously non-increasing width from the wafer surface to the second portion; and filling the trench with a conductive material. A silicon wafer including such a conductive trench is also disclosed. | 01-21-2010 |
| 20100117612 | DC-TO-DC CONVERTER COMPRISING A RECONFIGURABLE CAPACITOR UNIT - The present invention relates to a configurable trench multi-capacitor device comprising a trench in a semiconductor substrate. The trench has a lateral extension exceeding 10 micrometer and a trench filling includes a number of at least four electrically conductive capacitor-electrode layers. A switching unit is provided that comprises a plurality of switching elements electrically interconnected between different capacitor-electrode layers of the trench filling. A control unit is connected with the switching unit and configured to generate and provide to the switching unit respective control signals for forming a respective one of a plurality of multi-capacitor configurations using the capacitor-electrode layers of the trench filling. | 05-13-2010 |
| 20100225278 | CHARGE PUMP DC-DC CONVERTER COMPRISING SOLID STATE BATTERIES - An electronic device is provided which comprises a DC-DC converter. The DC-DC converter comprises at least one solid-state rechargeable battery (B | 09-09-2010 |
| 20100230787 | ELECTRIC DEVICE COMPRISING AN IMPROVED ELECTRODE - The invention relates to an electric device including an electric element, the electric element comprising a first electrode ( | 09-16-2010 |
| 20110073994 | TRENCH CAPACITOR AND METHOD FOR PRODUCING THE SAME - A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high-permittivity materials within a trench in a semiconductor substrate, to provide a trench capacitor having a high capacitance whilst being efficient in utilisation of semiconductor real estate. | 03-31-2011 |
| 20110101471 | METHOD OF FORMING A NANOCLUSTER-COMPRISING DIELECTRIC LAYER AND DEVICE COMPRISING SUCH A LAYER - A method of forming a dielectric layer on a further layer of a semiconductor device is disclosed. The method comprises depositing a dielectric precursor compound and a further precursor compound over the further layer, the dielectric precursor compound comprising a metal ion from the group consisting of Yttrium and the Lanthanide series elements, and the further precursor compound comprising a metal ion from the group consisting of group IV and group V metals; and chemically converting the dielectric precursor compound and the further precursor compound into a dielectric compound and a further compound respectively, the further compound self-assembling during said conversion into a plurality of nanocluster nuclei within the dielectric layer formed from the first dielectric precursor compound. The nanoclusters may be dielectric or metallic in nature. Consequently, a dielectric layer is formed that has excellent charge trapping capabilities. Such a dielectric layer is particularly suitable for use in semiconductor devices such as non-volatile memories. | 05-05-2011 |
| 20110118128 | BIOSENSOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A biosensor device ( | 05-19-2011 |
| 20110128111 | PLANAR, MONOLITHICALLY INTEGRATED COIL - The present invention provides a means to integrate planar coils on silicon, while providing a high inductance. This high inductance is achieved through a special back- and front sided shielding of a material. In many applications, high-value inductors are a necessity. In particular, this holds for applications in power management. In these applications, the inductors are at least 5 of the order of 1 μH, and must have an equivalent series resistance of less than 0.1 Ω. For this reason, those inductors are always bulky components, of a typical size of 2×2×1 mm 3, which make a fully integrated solution impossible. On the other hand, integrated inductors, which can monolithically be integrated, do exist. However, these inductors suffer either from low inductance values, or 10 very-high DC resistance values. | 06-02-2011 |
