Frazzetto
Maristella Frazzetto, Catania IT
Patent application number | Description | Published |
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20090046766 | Method and system for resolving the acquisition ambiguity and the problem of false lock in tracking BOC(m,n) modulated signals, particularly for satellite positioning/navigation systems - A method and a system for the acquisition and tracking of BOC(m,n) modulated codes, m/n equal to an integer, in which a correlation function is calculated of the BOC(m,n) modulated code received from a remote transmitter with a code w | 02-19-2009 |
Nicolo' Frazzetto, San Giovanni La Punta IT
Patent application number | Description | Published |
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20150325654 | INTEGRATED ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THEREOF - An embodiment of an integrated electronic device formed in a body of semiconductor material, which includes: a substrate of a first semiconductor material, the first semiconductor material having a first bandgap; a first epitaxial region of a second semiconductor material and having a first type of conductivity, which overlies the substrate and defines a first surface, the second semiconductor material having a second bandgap wider than the first bandgap; and a second epitaxial region of the first semiconductor material, which overlies, and is in direct contact with, the first epitaxial region. The first epitaxial region includes a first buffer layer, which overlies the substrate, and a drift layer, which overlies the first buffer layer and defines the first surface, the first buffer layer and the drift layer having different doping levels. | 11-12-2015 |
Nicolò Frazzetto, S. Giovanni La Punta IT
Patent application number | Description | Published |
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20110095358 | DOUBLE-SIDED SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME - A semiconductor structure including a substrate of semiconductor material of a first type of conductivity; a first semiconductor layer set in direct electrical contact with the substrate on a first side of the substrate; a second semiconductor layer set in direct electrical contact with the substrate on a second side of the substrate; a first active electronic device formed in the first semiconductor layer; and a second active electronic device formed in the second semiconductor layer. | 04-28-2011 |
Nicolò Frazzetto, S. Giovanni La Punta IT
Patent application number | Description | Published |
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20110095358 | DOUBLE-SIDED SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME - A semiconductor structure including a substrate of semiconductor material of a first type of conductivity; a first semiconductor layer set in direct electrical contact with the substrate on a first side of the substrate; a second semiconductor layer set in direct electrical contact with the substrate on a second side of the substrate; a first active electronic device formed in the first semiconductor layer; and a second active electronic device formed in the second semiconductor layer. | 04-28-2011 |