| Patent application number | Description | Published |
|---|
| 20080315430 | NANOWIRE VIAS - A method of fabricating an integrated circuit including arranging a nanowire with a first end portion thereof at a first contact surface of a first electrical contact and with a second end portion sticking up from the first contact surface, and embedding at least part of the nanowire in dielectric material. | 12-25-2008 |
| 20090199043 | ERROR CORRECTION IN AN INTEGRATED CIRCUIT WITH AN ARRAY OF MEMORY CELLS - An integrated circuit includes an array of memory cells, and an error correction code circuit configured to correct errors in data read from the array based at least in part on a map that identifies locations of erratic memory cells in the array. | 08-06-2009 |
| 20090212438 | INTEGRATED CIRCUIT DEVICE COMPRISING CONDUCTIVE VIAS AND METHOD OF MAKING THE SAME - A semiconductor substrate for an integrated circuit device comprises at least one insulating substrate region being formed of a cohesive insulating material. The insulating substrate region includes at least two conductive vias extending at least between a first surface and a second surface of the insulating substrate region. | 08-27-2009 |
| 20090256258 | SEMICONDUCTOR CHIP WITH INTEGRATED VIA - An integrated circuit with a substrate with a lower and an upper surface is described. A via extends between the upper and the lower surface of the substrate. The via contains a conductive filling material that comprises carbon. | 10-15-2009 |
| 20090268513 | MEMORY DEVICE WITH DIFFERENT TYPES OF PHASE CHANGE MEMORY - A memory includes a first memory device including an array of phase changing memory cells. The first memory device is of a first memory type. The integrated circuit includes a second memory device including an array of phase changing memory cells. The second memory device is of a second memory type that is different than the first memory type. The first and second memory devices are packaged together into a single memory device. | 10-29-2009 |
| 20090321706 | Resistive Memory Devices with Improved Resistive Changing Elements - An integrated circuit includes a memory cell with a resistance changing memory element. The resistance changing memory element includes a first electrode, a second electrode, and a resistivity changing material disposed between the first and second electrodes, where the resistivity changing material is configured to change resistive states in response to application of a voltage or current to the first and second electrodes. In addition, at least one of the first electrode and the second electrode comprises an insulator material including a self-assembled electrically conductive element formed within the insulator material. The self-assembled electrically conductive element formed within the insulator material remains stable throughout the operation of switching the resistivity changing material to different resistive states. | 12-31-2009 |
| 20100084741 | Integrated Circuit - According to an embodiment, an integrated circuit including a plurality of resistance changing memory cells is disclosed. Each memory cell includes a first electrode, a second electrode and resistance changing memory element arranged between the first electrode and the second electrode. A front surface area of an end section of the first electrode that faces the resistance changing memory element is smaller than a front surface area of an end section of the second electrode that faces the resistance changing memory element. | 04-08-2010 |
