| Patent application number | Description | Published |
|---|
| 20090317931 | METHOD OF FABRICATING AN ELECTROMECHANICAL DEVICE INCLUDING AT LEAST ONE ACTIVE ELEMENT - The invention relates to a method of fabricating an electromechanical device including an active element, wherein the method comprises the following steps: | 12-24-2009 |
| 20090321887 | METHOD OF FABRICATING AN ELECTROMECHANICAL STRUCTURE INCLUDING AT LEAST ONE MECHANICAL REINFORCING PILLAR - The invention relates to a method of fabricating an electromechanical structure presenting a first substrate ( | 12-31-2009 |
| 20090325335 | HETEROGENEOUS SUBSTRATE INCLUDING A SACRIFICIAL LAYER, AND A METHOD OF FABRICATING IT - The invention relates to a method of making a component from a heterogeneous substrate comprising first and second portions in at least one monocrystalline material, and a sacrificial layer constituted by at least one stack of at least one layer of monocrystalline Si situated between two layers of monocrystalline SiGe, the stack being disposed between said first and second portions of monocrystalline material, wherein the method consists in etching said stack by making:
| 12-31-2009 |
| 20100029031 | METHOD OF FABRICATING A MEMS/NEMS ELECTROMECHANICAL COMPONENT - The invention relates to a method of fabricating and electromechanical device on at least one substrate, the device including at least one active element and wherein the method comprises:
| 02-04-2010 |
| 20100067747 | METHOD AND DEVICE FOR RECOGNISING AN INDIVIDUAL - A device for recognizing an individual, including a sensor including a plurality of sensitive members having a contact area on which a portion likely to be that of the individual to be recognized is applied, a measurement mechanism connected to the sensitive members to supply information on local contact forces generated by the portion applied on the contact area, and a processor connected to the sensor to determine from the local contact forces a morphological characteristic of the individual to be recognized. The measurement mechanism also supplies information relating to at least another physical magnitude related to the contact, and the processor determines from the other physical magnitude a physiological characteristic of the individual to be recognized. | 03-18-2010 |
| 20100190301 | CAVITY CLOSURE PROCESS FOR AT LEAST ONE MICROELECTRONIC DEVICE - A process for closure of at least one cavity intended to encapsulate or be part of a microelectronic device, comprising the following steps:
| 07-29-2010 |
| 20110080069 | PIEZOELECTRIC ACTUATION STRUCTURE INCLUDING AN INTEGRATED PIEZORESISTIVE STRAIN GAUGE AND ITS PRODUCTION METHOD - The invention relates to a piezoelectric actuation structure including at least one strain gauge and at least one actuator produced from a stack on the surface of a substrate of at least one layer of piezoelectric material arranged between a bottom electrode layer and a top electrode layer, at least a portion of the stack forming the actuator being arranged above a cavity produced in the substrate, characterized in that the strain gauge is a piezoresistive gauge located in the top electrode layer and/or the bottom electrode layer, the layer or layers including electrode discontinuities making it possible to produce said piezoresistive gauge. The invention also relates to a method for producing such a structure. | 04-07-2011 |
| 20110221307 | ELECTROMECHANICAL TRANSDUCER DEVICE AND METHOD OF FORMING A ELECTROMECHANICAL TRANSDUCER DEVICE - A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure having at least one mechanical layer having a first thermal response characteristic, at least one layer of the actuating structure having a second thermal response characteristic different to the first thermal response characteristic, and a thermal compensation structure having at least one thermal compensation layer. The thermal compensation layer is different to the at least one layer and is arranged to compensate a thermal effect produced by the mechanical layer and the at least one layer of the actuating structure such that the movement of the movable structure is substantially independent of variations in temperature. | 09-15-2011 |
