| Patent application number | Description | Published |
|---|
| 20080238308 | Method and Apparatus for Light Emission Utilizing an OLED with a Microcavity - Provided is an OLED device and method of making the OLED device. According to an embodiment, the OLED device incorporates a microcavity structure including a dielectric mirror formed on a glass substrate, an anode formed above the dielectric mirror, an organic film layer formed above the anode, and a reflective electrode formed above the organic film layer such that the cavity is formed in the organic film layer by the dielectric mirror and the reflective electrode. The OLED device with microcavity structure can incorporate one or more phosphors deposited on an underside of the glass substrate such that light of additional wavelengths can be generated by the OLED device. | 10-02-2008 |
| 20090127977 | Method and Apparatus for Imaging Utilizing an Ultrasonic Imaging Sensor Array - The subject invention pertains to a piezoelectric device structure for improved acoustic wave sensing and/or generation, and process for making same. The piezoelectric thin film field effect transducer can be a thin film transistor (TFT) with either a piezoelectric film gate or a composite gate having a dielectric film and a piezoelectric film. The TFT structure can be either a top gate device or a bottom gate device. In an embodiment, the piezoelectric device structure can be used to form an array of piezoelectric thin film field effect transducers. A TFT switch can drive each piezoelectric transducer in the array. The piezoelectric transducers can both generate and sense acoustic waves. In a sensing mode, a signal from an acoustic wave can be collected at a readout terminal of the piezoelectric transducer. In a generating mode, an excitation signal can be applied across the piezoelectric transducer while the switch is ‘on’. | 05-21-2009 |
| 20100003511 | TRANSPARENT CONDUCTING ELECTRODE - A transparent electrode multilayer film has at least one group III doped ZnO layer and at least one metal layer, where layers of doped ZnO alternate with metal layers. When a plurality of group III doped ZnO layers are present, the doped ZnO layers can have the same or different dopants and one or more dopants can be present in a doped ZnO layer. When a plurality of metal layers is present, the layers can be of the same or different metals, and a metal layer can be a single metal or a combination of two or more metals. The multilayer film can be free standing, but generally includes a substrate. Advantageous substrates are transparent and can be flexible for use as a flexible electrode. A method to form a transparent conductive multilayer film involves depositing at least one layer of a group III doped ZnO and at least one metal layer on a substrate. | 01-07-2010 |
| 20100181552 | METHOD AND APPARATUS FOR INFRARED DETECTION AND DISPLAY - Embodiments of the subject invention relate to a method and apparatus for infrared (IR) detection. Organic layers can be utilized to produce a phototransistor for the detection of IR radiation. The wavelength range of the IR detector can be modified by incorporating materials sensitive to photons of different wavelengths. Quantum dots of materials sensitive to photons of different wavelengths than the host organic material of the absorbing layer of the phototransistor can be incorporated into the absorbing layer so as to enhance the absorption of photons having wavelengths associated with the material of the quantum dots. A photoconductor structure can be used instead of a phototransistor. The photoconductor can incorporate PbSe or PbS quantum dots. The photoconductor can incorporate organic materials and part of an OLED structure. A detected IR image can be displayed to a user. Organic materials can be used to create an organic light-emitting device. | 07-22-2010 |
| 20100237336 | NANOTUBE ENABLED, GATE-VOLTAGE CONTROLLED LIGHT EMITTING DIODES - Embodiments of the invention relate to vertical field effect transistor that is a light emitting transistor. The light emitting transistor incorporates a gate electrode for providing a gate field, a first electrode comprising a dilute nanotube network for injecting a charge, a second electrode for injecting a complementary charge, and an electroluminescent semiconductor layer disposed intermediate the nanotube network and the electron injecting layer. The charge injection is modulated by the gate field. The holes and electrons, combine to form photons, thereby causing the electroluminescent semiconductor layer to emit visible light. In other embodiments of the invention a vertical field effect transistor that employs an electrode comprising a conductive material with a low density of states such that the transistors contact barrier modulation comprises barrier height lowering of the Schottky contact between the electrode with a low density of states and the adjacent semiconductor by a Fermi level shift. | 09-23-2010 |
| 20110023934 | SOLARTURF: SOLAR ENERGY HARVESTING ARTIFICIAL TURF - A SolarTurf unit has a plurality of solar blades, each blade comprising a donor-acceptor conjugated polymer (DA-CP) disposed between and electrically contacting a working electrode and a counter electrode where at least one of electrodes is transparent and where the plurality of solar blades have like or different DA-CPs having like color or different colors, for example, green. The SolarTurf unit includes an interconnect strip having a first electrically conductive surface and a second electrically conductive surface separated by an insulator. The working electrodes are electrically connected to the first electrically conductive surface and the counter electrodes are electrically connected to the second electrically conductive surface. The SolarTurf units can be combined into a device for harvesting light energy to provide an electric output. The SolarTurf device can have the appearance of a lawn or other plant, fungi, rock, sand or animal. | 02-03-2011 |
| 20110031399 | METHOD AND APPARATUS FOR INFRARED DETECTION AND DISPLAY - Embodiments of the subject invention relate to a method and apparatus for infrared (IR) detection. Organic layers can be utilized to produce a phototransistor for the detection of IR radiation. The wavelength range of the IR detector can be modified by incorporating materials sensitive to photons of different wavelengths. Quantum dots of materials sensitive to photons of different wavelengths than the host organic material of the absorbing layer of the phototransistor can be incorporated into the absorbing layer so as to enhance the absorption of photons having wavelengths associated with the material of the quantum dots. A photoconductor structure can be used instead of a phototransistor. The photoconductor can incorporate PbSe or PbS quantum dots. The photoconductor can incorporate organic materials and part of an OLED structure. A detected IR image can be displayed to a user. Organic materials can be used to create an organic light-emitting device. | 02-10-2011 |
| 20110031403 | METHOD AND APPARATUS FOR INFRARED DETECTION AND DISPLAY - Embodiments of the subject invention relate to a method and apparatus for infrared (IR) detection. Organic layers can be utilized to produce a phototransistor for the detection of IR radiation. The wavelength range of the IR detector can be modified by incorporating materials sensitive to photons of different wavelengths. Quantum dots of materials sensitive to photons of different wavelengths than the host organic material of the absorbing layer of the phototransistor can be incorporated into the absorbing layer so as to enhance the absorption of photons having wavelengths associated with the material of the quantum dots. A photoconductor structure can be used instead of a phototransistor. The photoconductor can incorporate PbSe or PbS quantum dots. The photoconductor can incorporate organic materials and part of an OLED structure. A detected IR image can be displayed to a user. Organic materials can be used to create an organic light-emitting device. | 02-10-2011 |
