Patent application number | Description | Published |
20090026532 | SHORT CIRCUIT LIMITING IN POWER SEMICONDUCTOR DEVICES - A power semiconductor device includes a semiconductor body. The semiconductor body includes a body region of a first conductivity type for forming therein a conductive channel of a second conductivity type; a gate electrode arranged next to the body region; and a floating electrode arranged between the gate electrode and the body region. | 01-29-2009 |
20090114986 | FIELD PLATE TRENCH TRANSISTOR AND METHOD FOR PRODUCING IT - A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials. | 05-07-2009 |
20090283866 | Semiconductor Substrate and a Method of Manufacturing the Same - The semiconductor substrate includes a high-ohmic semiconductor material with a conduction band edge and a valence band edge, separated by a bandgap, wherein the semiconductor material includes acceptor or donor impurity atoms or crystal defects, whose energy levels are located at least 120 meV from the conduction band edge, as well as from the valence band edge in the bandgap; and wherein the concentration of the impurity atoms or crystal defects is larger than 1×10 | 11-19-2009 |
20110024791 | BIPOLAR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A bipolar semiconductor device and method are provided. One embodiment provides a bipolar semiconductor device including a first semiconductor region of a first conductivity type having a first doping concentration, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, and a plurality of third semiconductor regions of the first conductivity type at least partially arranged in the first semiconductor region and having a doping concentration which is higher than the first doping concentration. Each of the third semiconductor regions is provided with at least one respective junction termination structure. | 02-03-2011 |
20110095362 | FIELD PLATE TRENCH TRANSISTOR AND METHOD FOR PRODUCING IT - A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials. | 04-28-2011 |
20130140616 | Integrated Circuit Including a Power Transistor and an Auxiliary Transistor - In one embodiment of an integrated circuit, the integrated circuit includes a power transistor with a power control terminal, a first power load terminal and a second power load terminal. The integrated circuit further includes an auxiliary transistor with an auxiliary control terminal, a first auxiliary load terminal and a second auxiliary load terminal. The first auxiliary load terminal is electrically coupled to the power control terminal. The integrated circuit further includes a capacitor with a first capacitor electrode, a second capacitor electrode and a capacitor dielectric layer. The capacitor dielectric layer includes at least one of a ferroelectric material and a paraelectric material. The first capacitor electrode is electrically coupled to the auxiliary control terminal. | 06-06-2013 |
20130264607 | Reverse Conducting Insulated Gate Bipolar Transistor - A semiconductor includes a drift zone of a first conductivity type arranged between a first side and a second side of a semiconductor body. The semiconductor device further includes a first region of the first conductivity type and a second region of a second conductivity type subsequently arranged along a first direction parallel to the second side. The semiconductor device further includes an electrode at the second side adjoining the first and second regions. The semiconductor device further includes a third region of the second conductivity type arranged between the drift zone and the first region. The third region is spaced apart from the second region and from the second side. | 10-10-2013 |
20130299835 | Semiconductor Device with an Integrated Poly-Diode - A field effect semiconductor device includes a semiconductor body having a main horizontal surface and a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type arranged between the first semiconductor region and the main horizontal surface, an insulating layer arranged on the main horizontal surface, and a first metallization arranged on the insulating layer. The first and second semiconductor regions form a pn-junction. The semiconductor body further has a deep trench extending from the main horizontal surface vertically below the pn-junction and including a conductive region insulated from the first semiconductor region and the second semiconductor region, and a narrow trench including a polycrystalline semiconductor region extending from the first metallization, through the insulating layer and at least to the conductive region. A vertical poly-diode structure including a horizontally extending pn-junction is arranged at least partly in the narrow trench. | 11-14-2013 |
20130341673 | Reverse Conducting IGBT - A semiconductor device includes a first emitter region of a first conductivity type, a second emitter region of a second conductivity type complementary to the first conductivity type, and a drift region of the second conductivity type arranged in a semiconductor body. The first and second emitter regions are arranged between the drift region and a first electrode and are each connected to the first electrode. A device cell of a cell region includes a body region of the first conductivity type adjoining the drift region, a source region of the second conductivity type adjoining the body region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. A second electrode is electrically connected to the source region and the body region. A floating parasitic region of the first conductivity type is disposed outside the cell region. | 12-26-2013 |
20130341674 | Reverse Conducting IGBT - A semiconductor device includes a first emitter region of a first conductivity type, a second emitter region of a second conductivity type complementary to the first type, a drift region of the second conductivity type, and a first electrode. The first and second emitter regions are arranged between the drift region and first electrode and each connected to the first electrode. A device cell of a cell region includes a body region of the first conductivity type adjoining the drift region, a source region of the second conductivity type adjoining the body region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. A second electrode is electrically connected to the source and body regions. A parasitic region of the first conductivity type is disposed outside the cell region and includes at least one section with charge carrier lifetime reduction means. | 12-26-2013 |
20140027814 | Power Device and a Reverse Conducting Power IGBT - A semiconductor device is provided which includes a semiconductor body having a base region and a main horizontal surface, and a first electrode arranged on the main horizontal surface. The semiconductor body further includes a plurality of vertical trenches having gate electrodes in a vertical cross-section. A body region forms a first pn-junction with the base region and extends between two of the vertical trenches. A source region is in ohmic contact with the first electrode and arranged between the two vertical trenches. An anti-latch-up region is arranged between the two vertical trenches and in ohmic contact with the first electrode. The anti-latch-up region has a maximum doping concentration which is higher than a maximum doping concentration of the body region. An anode region forms a rectifying pn-junction with the base region only and adjoins a third one of the vertical trenches, and has ohmic contact with the first electrode. | 01-30-2014 |
20140203349 | METHOD OF PRODUCING A HIGH-VOLTAGE-RESISTANT SEMICONDUCTOR COMPONENT HAVING VERTICALLY CONDUCTIVE SEMICONDUCTOR BODY AREAS AND A TRENCH STRUCTURE - A high-voltage-resistant semiconductor component ( | 07-24-2014 |
20140291809 | Semiconductor Substrate and a Method of Manufacturing the Same - The semiconductor substrate includes a high-ohmic semiconductor material with a conduction band edge and a valence band edge, separated by a bandgap, wherein the semiconductor material includes acceptor or donor impurity atoms or crystal defects, whose energy levels are located at least 120 meV from the conduction band edge, as well as from the valence band edge in the bandgap; and wherein the concentration of the impurity atoms or crystal defects is larger than 1×10 | 10-02-2014 |
20150014743 | IGBT with Emitter Electrode Electrically Connected with an Impurity Zone - An IGBT includes a semiconductor portion with IGBT cells. Each IGBT cell includes a source zone of a first conductivity type, a body zone of a second, complementary conductivity type, and a drift zone of the first conductivity type separated from the source zone by the body zone. An emitter electrode includes a main layer and an interface layer. The interface layer directly adjoins at least one of the body zone and a supplementary zone of the second conductivity type. A contact resistance between the semiconductor portion and the interface layer is higher than between the semiconductor portion and a material of the main layer. For example, the interface layer may reduce diode emitter efficiency and reverse recovery losses in IGBTs. | 01-15-2015 |
20150056794 | Method for Forming a Semiconductor Device with an Integrated Poly-Diode - A method for forming a field effect power semiconductor device includes providing a semiconductor body comprising a main horizontal surface and a conductive region arranged next to the main horizontal surface, forming an insulating layer on the main horizontal surface, and etching a narrow trench through the insulating layer so that a portion of the conductive region is exposed, the narrow trench comprising, in a given vertical cross-section, a maximum horizontal extension. The method further includes forming a vertical poly-diode structure comprising a horizontally extending pn-junction. Forming the vertical poly-diode structure includes depositing a polycrystalline semiconductor layer comprising a minimum vertical thickness of at least half of the maximum horizontal extension and maskless back-etching of the polycrystalline semiconductor layer to form a polycrystalline region in the narrow trench. | 02-26-2015 |