Patent application number | Description | Published |
20080284313 | Structured Luminescence Conversion Layer - An apparatus device such as a light source is disclosed which has an OLED device and a structured luminescence conversion layer deposited on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The structured luminescence conversion layer contains regions such as color-changing and non-color-changing regions with particular shapes arranged in a particular pattern. | 11-20-2008 |
20090212683 | Red-Emitting Luminescent Substance and Light Source Comprising Such a Luminescent Substance - Disclosed is a luminescent substance which has the structure EA3N2Si2O4:D, wherein EA=(Sr,Ba,Ca) and D=Eu, provides red emission, and is characterized by great stability and a simple production process. Said luminescent substance can be used for many different types of light sources. | 08-27-2009 |
20090272998 | OPTOELECTRONIC SEMICONDUCTOR CHIP COMPRISING A WAVELENGTH CONVERSION SUBSTANCE, AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT COMPRISING SUCH A SEMICONDUCTOR CHIP, AND METHOD FOR PRODUCING THE OPTOELECTRONIC SEMICONDUCTOR CHIP - A semiconductor chip comprises: a semiconductor body which comprises a semiconductor layer sequence suitable for emitting electromagnetic radiation of a first wavelength range from its front side; and a first wavelength-converting layer on at least one first partial region of the front side of the semiconductor body with a first wavelength conversion substance, which converts radiation of the first wavelength range into radiation of a second wavelength range, which is different from the first wavelength range, wherein at least one second partial region of the front side is free of the first wavelength-converting layer. An optoelectronic component comprising such a semiconductor chip and a method for producing the semiconductor chip are furthermore described. | 11-05-2009 |
20100270909 | LUMINOPHORE AND ILLUMINATION SYSTEM HAVING SUCH A LUMINOPHORE - A luminophore consisting of the BAM system as a host lattice, having the stoichiometry M | 10-28-2010 |
20100276714 | CONVERSION LED - A conversion LED is provided. The conversion LED may include a primary light source which emits in the short-wave radiation range below 420 nm, and a luminophore placed in front of it consisting of the BAM system as a host lattice for at least partial conversion of the light source's radiation into longer-wave radiation, wherein the BAM luminophore is applied as a thin layer having a thickness of at most 50 μm directly on the surface of the light source, the BAM luminophore having the general stoichiometry (M1−r Mgr)O*k(Al2O3), where r=0.4 to 0.6 and M=EAeEu1−e, with EA=Ba, Sr, Ca, and e=0.52 to 0.8, and k=1.5 to 4.5. | 11-04-2010 |
20110149550 | Alpha-sialon phosphor - The present invention relates to a novel alpha-sialon phosphor that is characterized in that it contains a metal M2 together with Mn as a dopant. M2 is particularly Eu and/or Yb. | 06-23-2011 |
20120032211 | Optoelectronic Component - An optoelectronic component comprises an organic layer sequence ( | 02-09-2012 |
20120075834 | Ceramic Wavelength Converter and LED Light Source Containing Same - There is herein described an LED light source comprising an LED and a ceramic wavelength converter positioned to receive at least a portion of the light emitted by said LED, said ceramic wavelength converter converting at least a portion of the light emitted by said LED into light of a different wavelength, said ceramic wavelength converter comprising a chlorosilicate phosphor and having a density at least about 90% of theoretical density. The chlorosilicate phosphor is preferably a green-emitting Ca | 03-29-2012 |
20130188334 | LIGHT SYSTEM WITH INCREASED EFFICIENCY - A light system based on at least two chips, in particular LEDs containing chips, wherein a means for at least partially converting the radiation of a first chip is provided, wherein a layer containing a phosphor as conversion means is mounted in front of a first chip intended for the conversion, which phosphor-containing layer convers at least some of the primary radiation of the first chip into secondary radiation, wherein the second chip emits radiation with a greater wavelength than the first chip, wherein the layer is arranged spaced apart from the first chip, wherein the second chip is arranged in such a way that its radiation is substantially not absorbed by the phosphor. | 07-25-2013 |
20140166902 | Wavelength Conversion Body And Method For Manufacturing Same - A wavelength conversion body ( | 06-19-2014 |
20140217454 | LIGHT SOURCE COMPRISING A LUMINESCENT SUBSTANCE AND ASSOCIATED ILLUMINATION UNIT - A light source includes a primary radiation source, which emits radiation in the shortwave range of the optical spectral range, wherein this radiation is converted at least by means of a first luminescent substance entirely or partially into secondary longer-wave radiation in the visible spectral range, wherein the first luminescent substance originates from the class of nitridic modified orthosilicates (NOS), wherein the luminescent substance has as a component M predominantly the group EA=Sr, Ba, Ca, or Mg alone or in combination, wherein the activating dopant D is composed at least of Eu and replaces a proportion of M, and wherein a proportion of SiO2 is introduced in deficiency, so that a modified sub-stoichiometric orthosilicate is provided, wherein the orthosilicate is an orthosilicate stabilized with RE and N, where RE=rare earth metal. | 08-07-2014 |
20140233213 | LED LIGHT SYSTEM WITH VARIOUS LUMINESCENT MATERIALS - An LED light system may include a primary LED radiation source, in particular at least one blue- or UV-emitting semiconductor element, wherein a first dome of transparent or translucent material, which acts as a conversion element, is placed in front of the primary light source in the emission direction, wherein at least a part of the surface of the first dome is divided into at least two regions of different types, which comprise luminescent materials, the at least two regions including different luminescent materials for the conversion. | 08-21-2014 |
20150014711 | OPTOELECTRONIC COMPONENT WITH INERT GAS ATMOSPHERE - Various embodiments relate to an optoelectronic component, including a carrier element, on which at least one optoelectronic semiconductor chip is arranged, and a cover, which is mounted on the carrier element in a region extending circumferentially around the semiconductor chip and together with the carrier element forms a sealed cavity in which the at least one optoelectronic semiconductor chip is arranged in an inert gas. | 01-15-2015 |