Francois Neuilly
Francois Neuilly, Colomby-Sur-Thaon FR
Patent application number | Description | Published |
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20080233688 | Method of Fabricating a Bipolar Transistor - A method of fabricating a bipolar transistor in a first trench ( | 09-25-2008 |
20090174034 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE - The invention relates to a semiconductor device ( | 07-09-2009 |
20090269931 | ELECTRONIC DEVICE AND METHOD FOR MAKING THE SAME - The present invention provides a method for making a vertical interconnect through a substrate. The method makes use of a sacrificial buried layer | 10-29-2009 |
20100022056 | METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR - The invention provides for an alternative and less complex method of manufacturing a bipolar transistor comprising a field plate ( | 01-28-2010 |
20110001217 | ULTRA HIGH DENSITY CAPACITY COMPRISING PILLAR-SHAPED CAPACITORS FORMED ON BOTH SIDES OF A SUBSTRATE - The present invention describes an ultra High-Density Capacitor design, integrated in a semiconductor substrate, preferably a Si substrate, by using both wafer sides. The capacitors are pillar-shaped and comprise electrodes ( | 01-06-2011 |
20110101531 | THERMO-MECHANICAL STRESS IN SEMICONDUCTOR WAFERS - An apparatus for restricting the thermo-mechanical stress in semiconductor wafers both during manufacture, and during the operating lifetime of the semiconductor devices and systems formed on the wafer. An electrically conductive track | 05-05-2011 |
Francois Neuilly, Colomsy-Sur-Thaon FR
Patent application number | Description | Published |
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20090200577 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE - The invention relates to a semiconductor device with a substrate ( | 08-13-2009 |
Francois Neuilly, Anisy FR
Patent application number | Description | Published |
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20080272427 | Sonos Memory Device With Reduced Short-Channel Effects - A non-volatile memory device on a semiconductor substrate having a semiconductor surface layer ( | 11-06-2008 |