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Francois Neuilly

Francois Neuilly, Colomby-Sur-Thaon FR

Patent application numberDescriptionPublished
20080233688Method of Fabricating a Bipolar Transistor - A method of fabricating a bipolar transistor in a first trench (09-25-2008
20090174034SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE - The invention relates to a semiconductor device (07-09-2009
20090269931ELECTRONIC DEVICE AND METHOD FOR MAKING THE SAME - The present invention provides a method for making a vertical interconnect through a substrate. The method makes use of a sacrificial buried layer 10-29-2009
20100022056METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR - The invention provides for an alternative and less complex method of manufacturing a bipolar transistor comprising a field plate (01-28-2010
20110001217ULTRA HIGH DENSITY CAPACITY COMPRISING PILLAR-SHAPED CAPACITORS FORMED ON BOTH SIDES OF A SUBSTRATE - The present invention describes an ultra High-Density Capacitor design, integrated in a semiconductor substrate, preferably a Si substrate, by using both wafer sides. The capacitors are pillar-shaped and comprise electrodes (01-06-2011
20110101531THERMO-MECHANICAL STRESS IN SEMICONDUCTOR WAFERS - An apparatus for restricting the thermo-mechanical stress in semiconductor wafers both during manufacture, and during the operating lifetime of the semiconductor devices and systems formed on the wafer. An electrically conductive track 05-05-2011

Patent applications by Francois Neuilly, Colomby-Sur-Thaon FR

Francois Neuilly, Colomsy-Sur-Thaon FR

Patent application numberDescriptionPublished
20090200577SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE - The invention relates to a semiconductor device with a substrate (08-13-2009

Francois Neuilly, Anisy FR

Patent application numberDescriptionPublished
20080272427Sonos Memory Device With Reduced Short-Channel Effects - A non-volatile memory device on a semiconductor substrate having a semiconductor surface layer (11-06-2008