| Patent application number | Description | Published |
|---|
| 20080305619 | METHOD OF FORMING GROUP IV SEMICONDUCTOR JUNCTIONS USING LASER PROCESSING - A method forming a Group IV semiconductor junction on a substrate is disclosed. The method includes depositing a first set Group IV semiconductor nanoparticles on the substrate. The method also includes applying a first laser at a first laser wavelength, a first fluence, a first pulse duration, a first number of repetitions, and a first repetition rate to the first set Group IV semiconductor nanoparticles to form a first densified film with a first thickness, wherein the first laser wavelength and the first fluence are selected to limit a first depth profile of the first laser to the first thickness. The method further includes depositing a second set Group IV semiconductor nanoparticles on the first densified film. The method also includes applying a second laser at a second laser wavelength, a second fluence, a second pulse duration, a second number of repetitions, and a second repetition rate to the second set Group IV semiconductor nanoparticles to form a second densified film with a second thickness, wherein the second laser wavelength and the second fluence are selected to limit a second depth profile of the second laser to the second thickness. | 12-11-2008 |
| 20090053878 | METHOD FOR FABRICATION OF SEMICONDUCTOR THIN FILMS USING FLASH LAMP PROCESSING - A method for creating a Group IV semiconductor densified thin film is disclosed. The method includes applying a colloidal dispersion to a substrate, wherein the colloidal dispersion includes a plurality of Group IV semiconductor nanoparticles and an organic solvent. The method also includes removing the organic solvent by applying a first temperature for a first time period to form a Group IV semiconductor non-densified thin film; and heating the Group IV semiconductor non-densified thin film to a second temperature for a second time period, wherein the second temperature is a pre-heating target temperature. The method further includes heating the Group IV semiconductor non-densified thin film to a third temperature for a third time period with a flash lamp apparatus, wherein the third temperature is equal to or greater than a sintering temperature, wherein a Group IV semiconductor densified thin film is created. | 02-26-2009 |
| 20090230380 | Methods for Formation of Substrate Elements - The present invention relates to methods of forming substrate elements, including semiconductor elements such as nanowires, transistors and other structures, as well as the elements formed by such methods. | 09-17-2009 |
| 20090239330 | METHODS FOR FORMING COMPOSITE NANOPARTICLE-METAL METALLIZATION CONTACTS ON A SUBSTRATE - A method for forming a contact to a substrate is disclosed. The method includes providing a substrate, the substrate being doped with a first dopant; and diffusing a second dopant into at least a first side of the substrate to form a second dopant region, the first side further including a first side surface area. The method also includes forming a dielectric layer on the first side of the substrate. The method further includes forming a set of composite layer regions on the dielectric layer, wherein each composite layer region of the set of composite layer regions further includes a set of Group IV semiconductor nanoparticles and a set of metal particles. The method also includes heating the set of composite layer regions to a first temperature, wherein at least some composite layer regions of the set of composite layer regions etch through the dielectric layer and form a set of contacts with the second dopant region. | 09-24-2009 |
| 20100237288 | Nanowire Dispersion Compositions and Uses Thereof - Nanowire dispersion compositions (and uses thereof) are disclosed comprising a plurality of inorganic nanowires suspended in an aqueous or non-aqueous solution comprising at least one low molecular weight and/or low HLB (Hydrophile-Lipophile Balance) value dispersant. Methods of further improving the dispersability of a plurality of inorganic nanowires in an aqueous or non-aqueous solution comprise, for example, oxidizing the surface of the nanowires prior to dispersing the nanowires in the aqueous or non-aqueous solution. | 09-23-2010 |
| 20100275982 | GROUP IV NANOPARTICLE JUNCTIONS AND DEVICES THEREFROM - A device for generating electricity from solar radiation is disclosed. The device includes a wafer doped with a first dopant, the wafer including a front-side and a back-side, wherein the front-side is configured to be exposed to the solar radiation. The device also includes a fused Group IV nanoparticle thin film deposited on the front-side, wherein the nanoparticle thin film includes a second dopant, wherein the second dopant is a counter dopant. The device further includes a first electrode deposited on the nanoparticle thin film, and a second electrode deposited on the back-side, wherein when solar radiation is applied to the front-side, an electrical current is produced. | 11-04-2010 |
| 20120009721 | GROUP IV NANOPARTICLE JUNCTIONS AND DEVICES THEREFROM - A device for generating electricity from solar radiation is disclosed. The device includes a wafer doped with a first dopant, the wafer including a front-side and a back-side, wherein the front-side is configured to be exposed to the solar radiation. The device also includes a fused Group IV nanoparticle thin film deposited on the front-side, wherein the nanoparticle thin film includes a second dopant, wherein the second dopant is a counter dopant. The device further includes a first electrode deposited on the nanoparticle thin film, and a second electrode deposited on the back-side, wherein when solar radiation is applied to the front-side, an electrical current is produced. | 01-12-2012 |
