| Patent application number | Description | Published |
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| 20080273400 | FAST ERASABLE NON-VOLATILE MEMORY - A method writes data in a non-volatile memory comprising a main memory area comprising target locations, and an auxiliary memory area comprising auxiliary locations. The method comprises a write-erase cycle comprising: reading an initial set of data in a source location located in the main or auxiliary memory area; inserting the piece of data to be written into the initial set of data, to obtain an updated set of data, partially erasing a first group of auxiliary locations and a group of target locations designated by locations of a second group of auxiliary locations, and writing, in an erased auxiliary location of a third group of auxiliary locations, the updated set of data and the address of the target location. The method is particularly applicable to FLASH memories. | 11-06-2008 |
| 20080301356 | FAST WRITING NON-VOLATILE MEMORY - A method writes data in a non-volatile memory comprising memory cells that are erased before being written. The method comprises the steps of providing a main non-volatile memory area comprising target pages, providing an auxiliary non-volatile memory area comprising auxiliary pages, providing a look-up table to associate to an address of invalid target page an address of valid auxiliary page, and, in response to a command for writing a piece of data in a target page writing the piece of data as well as the address of the target page in a first erased auxiliary page, invalidating the target page, and updating the look-up table. | 12-04-2008 |
| 20080301357 | NON-VOLATILE MEMORY WITH AUXILIARY ROTATING SECTORS - A method writes data in a non-volatile memory. The method provides, in the memory, a non-volatile main memory area comprising target pages, a non-volatile auxiliary memory area comprising auxiliary pages, and, in the auxiliary memory area: a current sector comprising erased auxiliary pages usable to write data, a save sector comprising auxiliary pages comprising data linked to target pages to be erased or being erased, a transfer sector comprising auxiliary pages including data to be transferred to erased target pages, and an unavailable sector comprising auxiliary pages to be erased or being erased. The method can be applied in particular to FLASH memories. | 12-04-2008 |
| 20100020648 | CHARGE RETENTION CIRCUIT FOR A TIME MEASUREMENT - An electronic charge retention circuit for time measurement, including: at least a first capacitive element, a first electrode of which is connected to a floating node (F); at least a second capacitive element, a first electrode of which is connected to the floating node, the first capacitive element having a leakage through its dielectric space and the second capacitive element having a capacitance greater than the first; and at least a first transistor having an isolated control terminal connected to the floating node. | 01-28-2010 |
| 20100027334 | EEPROM CHARGE RETENTION CIRCUIT FOR TIME MEASUREMENT - An electronic charge retention circuit for time measurement, implanted in an array of EEPROM memory cells, each including a selection transistor in series with a floating-gate transistor, the circuit including, on any one row of memory cells: a first subassembly of at least a first cell, the thickness of the dielectric of the tunnel window of the floating-gate transistor of which is less than that of the other cells; a second subassembly of at least a second cell, the drain and source of the floating-gate transistor of which are interconnected; a third subassembly of at least a third cell; and a fourth subassembly of at least a fourth cell, the tunnel window of which is omitted, the respective floating gates of the transistors of the cells of the four subassemblies being interconnected. | 02-04-2010 |
| 20100054024 | CIRCUIT FOR READING A CHARGE RETENTION ELEMENT FOR A TIME MEASUREMENT - A method and a circuit for reading an electronic charge retention element for a temporal measurement, of the type including at least one capacitive element whose dielectric exhibits a leakage and a transistor with insulated control terminal for reading the residual charges, the reading circuit including; two parallel branches between two supply terminals, each branch including at least one transistor of a first type and one transistor of a second type, the transistor of the second type of one of the branches consisting of that of the element to be read and the transistor of the second type of the other branch receiving, on its control terminal, a staircase signal, the respective drains of the transistors of the first type being connected to the respective inputs of a comparator whose output provides an indication of the residual voltage in the charge retention element. | 03-04-2010 |
| 20100054038 | PROGRAMMING OF A CHARGE RETENTION CIRCUIT FOR A TIME MEASUREMENT - A method of controlling an electronic charge retention circuit for time measurement, including at least a first capacitive element, the dielectric of which has a leakage, and at least a second capacitive element, the dielectric of which has a higher capacitance than the first, the two elements having a common electrode defining a floating node that can be connected to an element for measuring its residual charge, in which a charge retention period is programmed or initialized by injecting or extracting charges via the first element. | 03-04-2010 |
| 20100331045 | EEPROM MEMORY ARCHITECTURE OPTIMIZED FOR EMBEDDED MEMORIES - The present disclosure relates to an electrically erasable and programmable memory comprising rows of memory cells to store words of N bits each, bit lines and word lines, wherein a row of memory cells comprises a first group of memory cells to store collectively erasable words, and at least one second group of memory cells to store one individually erasable word. | 12-30-2010 |
| 20110026346 | SELF-TIMED LOW POWER SENSE AMPLIFIER - A sense amplifier is disclosed comprising a first sense input, a second sense input, a latch, a first p-channel control transistor arranged to electrically power a first section of the latch and having a gate terminal linked to the first sense input, and a second p-channel control transistor arranged to electrically power a second section of the latch and having a gate terminal linked to the second sense input. Application may be in particular to low power embedded memories. | 02-03-2011 |
| 20110090745 | SENSE AMPLIFIER WITH FAST BITLINE PRECHARGE MEANS - The disclosure relates to a sense amplifier comprising a cascode transistor and means for biasing the cascode transistor, supplying a control voltage to a gate terminal of the cascode transistor. The means for biasing the cascode transistor comprise means for isolating the gate terminal of the cascode transistor from the output of the voltage generator during a first period of the precharge phase, so as to boost the bitline voltage, then for linking the gate terminal to the output of the voltage generator during a second period of the precharge phase. Application in particular to sense amplifiers for non-volatile memories. | 04-21-2011 |
| 20110128070 | CHARGE PUMP STAGE, METHOD FOR CONTROLLING A CHARGE PUMP STAGE AND MEMORY HAVING A CHARGE PUMP STAGE - A charge pump having a supply terminal, for receiving a supply voltage, and an output terminal, for supplying an output voltage. The charge pump has a control block including a comparator having a first comparison input, for receiving the supply voltage, a second comparison input, for receiving the output voltage, and a comparison output, for generating a pump-switch-off signal depending upon a comparison between the input voltage and the output voltage; and a switch controlled in switching off by the pump-switch-off signal and configured for switching off the charge pump circuit. The control block has an activation input for receiving an activation signal that has a plurality of pulses and repeatedly activates the comparator-circuit block. | 06-02-2011 |
