Patent application number | Description | Published |
20130197777 | SYSTEMS AND METHODS FOR MONITORING AND CONTROLLING FUEL SYSTEMS - Systems and methods may be provided for monitoring a fuel level of a vehicle. The fuel may be a gaseous fuel, such as natural gas. An electronic control unit may be able to receive a signal from one or more sensors. The electronic control unit may provide a command to drive a fuel gauge to display the fuel level. The electronic control unit may determine the gauge command based on the received signal and a filling compensation scheme. The electronic control unit may be initialized through a user interface. A filling compensation scheme may be selected during initialization. The electronic control unit may be capable of communicating various sensors, gauges, devices, controls and/or other ECUs of varying specifications. | 08-01-2013 |
20130284748 | STRAP GUIDE AND TANK MOUNTING FIXTURE - A system for enabling securing devices configured to hold fuels, such as gas cylinders, to frames is provided. The system includes an isolator fastened to the device configured to hold fuel and a strap that is attached to the frame. The isolator includes barriers on either side that prevent longitudinal slipping of the strap and ridges disposed between the barriers, which create cushioning between the strap and the device configured to hold fuel. | 10-31-2013 |
20130291825 | IGNITION DISCONNECT - The invention provides devices, systems and methods for filling, capping and electronically monitoring the closure of a fuel tank. In some embodiments, the invention provides devices, systems and methods for filling, capping and providing an ignition disconnect mechanism upon uncapping of a natural gas fuel tank. | 11-07-2013 |
20140175782 | SYSTEMS AND METHODS FOR MOUNTING A FUEL SYSTEM - The invention provides systems and methods for mounting a fuel system to a vehicle. In some embodiments, the invention provides systems and methods for mounting a fuel system comprising a fuel tank to a vehicle chassis using a bracket, which may be a multi-part bracket, and may be referred to as a “drop and go” bracket. | 06-26-2014 |
20140175783 | SYSTEMS AND METHODS FOR MOUNTING A FUEL SYSTEM - The invention provides systems and methods for mounting a fuel system to a vehicle. In some embodiments, the invention provides systems and methods for mounting a fuel system comprising a fuel tank to a vehicle chassis using a bracket, which may be a multi-part bracket, and may be referred to as a “drop and go” bracket. | 06-26-2014 |
20140190588 | VORTEX FILL - Improved methods, systems, and devices for filling fuel tanks, particularly compressed natural gas (CNG) fuel tanks, are provided. Such methods, systems, and devices lower the heat of compression when the fuel tank is being filled to a temperature lower than that if such methods, systems, and devices were not used. Pressure sensor logic on a fuel station will be less prone to error, enabling the tank to be filled more accurately and fully. To lower heat of compression, an insert is placed within the tank. The insert changes the flow characteristics of the fuel that is being delivered into the tank. Typically, the delivered fuel will be released into the interior of the tank in a vortex fashion to fill the tank. Other flow modification devices are also provided including an externally coupled Ranque-Hilsh vortex tube and a flow modification chamber built within a fuel tank. | 07-10-2014 |
20140217107 | MODULAR FUEL STORAGE SYSTEM - Methods and systems for modular fuel storage and transportation are provided. In an embodiment, a fuel storage system includes one or more fuel containers each supported by a fuel container support assembly. The fuel storage system may be mounted to a transportation device such as a vehicle or used in a stand-alone fashion. Each support assembly may include a plurality of detachable end support members such as end support members configured to support the end portions of the fuel container and side support members configured to support the body portion of the fuel container. Some of the end support members may include neck grooves such that when the end support members are coupled, the neck grooves form an enclosure around the neck portion of the fuel container. In an embodiment, the support assembly is configured to facilitate release of excess pressure in the fuel container. | 08-07-2014 |
Patent application number | Description | Published |
20090057813 | METHOD FOR SELF-ALIGNED REMOVAL OF A HIGH-K GATE DIELECTRIC ABOVE AN STI REGION - By forming a trench isolation structure after providing a high-k dielectric layer stack, direct contact of oxygen-containing insulating material of a top surface of the trench isolation structure with the high-k dielectric material in shared polylines may be avoided. This technique is self-aligned, thereby enabling further device scaling without requiring very tight lithography tolerances. After forming the trench isolation structure, the desired electrical connection across the trench isolation structure may be re-established by providing a further conductive material. | 03-05-2009 |
20090111223 | SOI DEVICE HAVING A SUBSTRATE DIODE FORMED BY REDUCED IMPLANTATION ENERGY - By removing material during the formation of trench openings of isolation structures in an SOI device, the subsequent implantation process for defining the well region for a substrate diode may be performed on the basis of moderately low implantation energies, thereby increasing process uniformity and significantly reducing cycle time of the implantation process. Thus, enhanced reliability and stability of the substrate diode may be accomplished while also providing a high degree of compatibility with conventional manufacturing techniques. | 04-30-2009 |
20090218601 | TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY USING AN PN JUNCTION BASED ON SILICON/GERMANIUM MATERIAL - By incorporating germanium material into thermal sensing diode structures, the sensitivity thereof may be significantly increased. In some illustrative embodiments, the process for incorporating the germanium material may be performed with high compatibility with a process flow for incorporating a silicon/germanium material into P-channel transistors of sophisticated semiconductor devices. Hence, temperature control efficiency may be increased with reduced die area consumption. | 09-03-2009 |
20090236667 | SEMICONDUCTOR DEVICE COMPRISING ISOLATION TRENCHES INDUCING DIFFERENT TYPES OF STRAIN - By forming isolation trenches of different types of intrinsic stress on the basis of separate process sequences, the strain characteristics of adjacent active semiconductor regions may be adjusted so as to obtain overall device performance. For example, highly stressed dielectric fill material including compressive and tensile stress may be appropriately provided in the respective isolation trenches in order to correspondingly adapt the charge carrier mobility of respective channel regions. | 09-24-2009 |
20110049637 | BURIED ETCH STOP LAYER IN TRENCH ISOLATION STRUCTURES FOR SUPERIOR SURFACE PLANARITY IN DENSELY PACKED SEMICONDUCTOR DEVICES - Material erosion of trench isolation structures in advanced semiconductor devices may be reduced by incorporating an appropriate mask layer stack in an early manufacturing stage. For example, a silicon nitride material may be incorporated as a buried etch stop layer prior to a sequence for patterning active regions and forming a strain-inducing semiconductor alloy therein, wherein, in particular, the corresponding cleaning process prior to the selective epitaxial growth process has been identified as a major source for causing deposition-related irregularities upon depositing the interlayer dielectric material. | 03-03-2011 |
20120025276 | TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY USING A PN JUNCTION BASED ON SILICON/GERMANIUM MATERIALS - By incorporating germanium material into thermal sensing diode structures, the sensitivity thereof may be significantly increased. In some illustrative embodiments, the process for incorporating the germanium material may be performed with high compatibility with a process flow for incorporating a silicon/germanium material into P-channel transistors of sophisticated semiconductor devices. Hence, temperature control efficiency may be increased with reduced die area consumption. | 02-02-2012 |
20150187765 | SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC ABOVE AN STI REGION - By forming a trench isolation structure after providing a high-k dielectric layer stack, direct contact of oxygen-containing insulating material of a top surface of the trench isolation structure with the high-k dielectric material in shared polylines may be avoided. This technique is self-aligned, thereby enabling further device scaling without requiring very tight lithography tolerances. After forming the trench isolation structure, the desired electrical connection across the trench isolation structure may be re-established by providing a further conductive material. | 07-02-2015 |