Inventors list

Assignees list

Classification tree browser

Top 100 Inventors

Top 100 Assignees


Foong, CA

Fatt Foong, Goleta, CA US

Patent application numberDescriptionPublished
20100035377Transfer Coating Method - A method for partially coating a structure having one or more small protruding features is provided. The method includes: (a) providing a structure comprising a base and a protruding feature attached to the base of the structure, the feature having a diameter or width of about 1 mm or less; (b) contacting the protruding feature with a substantially uniform layer of viscous coating material, the layer having a pre-determined thickness, to transfer at least some of the coating material from the layer of coating material to the protruding feature, without contacting the base of the structure with the layer of viscous coating material; and (c) separating the structure from the layer of coating material to form a substantially uniformly coated protruding feature, wherein the coating occupies a desired pre-determined area on the feature.02-11-2010
20110104841MASK LEVEL REDUCTION FOR MOFET - A method of fabricating a thin film transistor for an active matrix display using reduced masking operations includes patterning a gate on a substrate. A gate dielectric is formed over the gate and a semiconducting metal oxide is deposited on the gate dielectric. A channel protection layer is patterned on the semiconducting metal oxide overlying the gate to define a channel area and to expose the remaining semiconducting metal oxide. A source/drain metal layer is deposited on the structure and etched through to the channel protection layer above the gate to separate the source/drain metal layer into source and drain terminals and the source/drain metal layer and the semiconducting metal oxide are etched through at the periphery to isolate the transistor. A nonconductive spacer is patterned on the transistor and portions of the surrounding source/drain metal layer.05-05-2011

Patent applications by Fatt Foong, Goleta, CA US

Sally Foong, Milpitas, CA US

Patent application numberDescriptionPublished
20080308947Die offset die to die bonding - A semiconductor die is provided on a spacer, the die having first and second opposite edges which extend beyond respective first and second opposite edges of the spacer, the first edge of the die extending beyond the first edge of the spacer to a lesser extent than the second edge of the die extends beyond the second edge of the spacer. Furthermore, a first semiconductor die has a plurality of bond pads thereon, a second semiconductor die has a plurality of bond pads thereon, and a substrate has a plurality of bond pads thereon. Each of a first plurality of wires connects a bond pad on the first semiconductor die with a bond pad on the second semiconductor die, and each of a second plurality of wires connects a bond pad on the second semiconductor die with a bond pad on the substrate.12-18-2008
20080318364PROCESS APPLYING DIE ATTACH FILM TO SINGULATED DIE - Methods and systems of applying a plurality of pieces of die attach film to a plurality of singulated dice are provided. The method can involve making intervals between rows and columns of a plurality of pieces of die attach film. The interval can be made by expanding an underlaid expandable film on which the plurality of pieces of die attach film are placed or by removing portions of the die attach film between rows and columns of the plurality of pieces of die attach film. The method can further involve placing a plurality of singulated dice back side down on the plurality of pieces of die attach film.12-25-2008
20090001599DIE ATTACHMENT, DIE STACKING, AND WIRE EMBEDDING USING FILM - Systems, methods, and/or devices that facilitate stacking dies in a multi-die stack using film over wire and attaching a die to a substrate are presented. Film over wire (FOW) techniques can be employed to facilitate stacking dies that are the same or similar in size such that the wires bonded onto the lower die can be embedded in film used to attach the two dies. FOW techniques can also be employed to embed a smaller die and wires attached thereto in film underneath a larger die stacked on top of the lower die such that the larger die can be supported by the film in areas where the larger die would otherwise overhang. Die attach film can be utilized to facilitate attaching a die to a substrate such that all areas between the die and substrate are filled thereby reducing or eliminating delamination.01-01-2009
20090091043Die offset die to die bonding - A semiconductor die is provided on a spacer, the die having first and second opposite edges which extend beyond respective first and second opposite edges of the spacer, the first edge of the die extending beyond the first edge of the spacer to a lesser extent than the second edge of the die extends beyond the second edge of the spacer. Furthermore, a first semiconductor die has a plurality of bond pads thereon, a second semiconductor die has a plurality of bond pads thereon, and a substrate has a plurality of bond pads thereon. Each of a first plurality of wires connects a bond pad on the first semiconductor die with a bond pad on the second semiconductor die, and each of a second plurality of wires connects a bond pad on the second semiconductor die with a bond pad on the substrate.04-09-2009
20090093084Die offset die to bonding - A semiconductor die is provided on a spacer, the die having first and second opposite edges which extend beyond respective first and second opposite edges of the spacer, the first edge of the die extending beyond the first edge of the spacer to a lesser extent than the second edge of the die extends beyond the second edge of the spacer. Furthermore, a first semiconductor die has a plurality of bond pads thereon, a second semiconductor die has a plurality of bond pads thereon, and a substrate has a plurality of bond pads thereon. Each of a first plurality of wires connects a bond pad on the first semiconductor die with a bond pad on the second semiconductor die, and each of a second plurality of wires connects a bond pad on the second semiconductor die with a bond pad on the substrate.04-09-2009
20090115033Reduction of package height in a stacked die configuration - A method and structure for reducing the size of semiconductor package is disclosed. In one example embodiment, a method for stacking dies of a semiconductor package includes forming a set of insulated bonding wires between respective bonding pads of a first semiconductor integrated circuit die and a conductive layer electrically detached from the respective bonding pads, applying an adhesive material on a top surface of the first semiconductor integrated circuit die, and securing a second semiconductor integrated circuit die one the top surface of the first semiconductor integrated circuit die with the adhesive material.05-07-2009