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Fons
Brandy Fons, Austin, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20080229474 | TAPERED SHIRT WITH INCORPORATED SUPPORT SYSTEM AND METHOD - A woman's shirt includes integrated outerwear and support undergarment. The support undergarment has cups, sized for accommodating the woman's breasts and particular bust size. The outerwear of the shirt includes a front portion and a back portion. The front portion is connected to the back portion, to form neck, arm and bottom openings. The support undergarment includes semi-rigid cups, such as foam or padded cups. The support undergarment includes a front panel and a back panel. The cups are included in the front panel. The front panel is connected to the front portion at extents of the front portion forming the neck and arm openings. The back panel is connected to the back portion at extents of the back portion forming the arm openings. The shirt is sized by characteristics of measures of breast cup size and of length from just under the woman's breasts to a preferred ride location on the woman's torso for the bottom of the shirt when worn by the woman. Measurement tools assist to size the shirt per these measures. | 09-25-2008 |
James Paul Fons, Ibaraki JP
| Patent application number | Description | Published |
|---|---|---|
| 20100200828 | SOLID MEMORY - In one embodiment of the present invention, recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase-transformation of a crystalline state and an amorphous state of a chalcogen compound including Te which serves as a recording material. Since, however, a recording thin film is formed of a polycrystal but not a single crystal, a variation in resistance values occurs and a change in volume caused upon phase-transition has placed a limit on the number of times of readout of record. In one embodiment, the above problem is solved by preparing a solid memory having a superlattice structure of thin films including Ge and thin films including Sb. The solid memory can realize the number of times of repeated recording and erasing of 10 | 08-12-2010 |
| 20100207090 | SOLID MEMORY - In one embodiment of the present invention, recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase-transformation of a crystalline state and an amorphous state of a chalcogen compound including Te which serves as a recording material. Since, however, a recording thin film is formed of a polycrystal but not a single crystal, a variation in resistance values occurs and a change in volume caused upon phase-transition has placed a limit on the number of times of readout of the record. The above problem is solved by preparing a solid memory having a superlattice structure with a thin film containing Sb and a thin film containing Te. The solid memory can realize the number of times of repeated recording and erasing of 10 | 08-19-2010 |
James Paul Fons, Tsukuba-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090269542 | OPTICAL RECORDING MEDIUM - An object of the invention is to write-once record and reproduce, or only reproduce, a mark smaller than the resolution limit; obtain a high level of reproduction performance (CNR and the like); and realize a high level of reproduction durability. In the invention, between a signal reproducing functional layer composed of Sb or Te and a protecting layer there is introduced a thermally stable diffusion preventing layer, and thereby reactions between the signal reproducing functional layer and the protecting layer due to increased temperature can be prevented or suppressed while increasing reproduction durability. | 10-29-2009 |
Michael P Fons, San Diego, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20120046598 | Contactless Electropermeabilization Electrode and Method - Devices and methods for delivering an electropermeabilizing pulse of electric energy to a tissue surface to enable delivery into cells in the tissue therapeutic substances. The device incorporates a source capable of generating a sufficient voltage potential to deliver a spark across a gap and delivers same to the tissue surface. | 02-23-2012 |
Mogens Juhl Fons, Faarup DK
| Patent application number | Description | Published |
|---|---|---|
| 20090101310 | Articulated Joint with Adjustable Stiffness - A bed of particulate material | 04-23-2009 |
Mogens Juhl Fons, Farup DK
| Patent application number | Description | Published |
|---|---|---|
| 20080283226 | Method and Cooler for Cooling Hot Particulate Material - Described is method as well as a cooler ( | 11-20-2008 |
Paul Fons, Ibaraki JP
| Patent application number | Description | Published |
|---|---|---|
| 20100315867 | SOLID-STATE MEMORY DEVICE, DATA PROCESSING SYSTEM, AND DATA PROCESSING DEVICE - A solid-state memory device includes: a superlattice laminate having plural crystal layers laminated therein, the crystal layers including first and second crystal layers having mutually opposite compositions; a lower electrode provided on a first surface in a laminating direction of the superlattice laminate; and an upper electrode provided on a second surface of the superlattice laminate in the laminating direction. The first crystal layer included in the superlattice laminate is made of a phase change compound. According to the present invention, the superlattice laminate laminated in opposite directions of the upper and lower electrodes is sandwiched between these electrodes. Therefore, when an electric energy is applied to the superlattice laminate via these electrodes, a uniform electric energy can be applied to a laminated surface of the superlattice laminate. Accordingly, fluctuation of a resistance is small even when information is repeatedly rewritten, and data can be read stably as a result. | 12-16-2010 |
| 20110207284 | SOLID-STATE MEMORY MANUFACTURING METHOD - A method of at least one embodiment of the present invention of manufacturing a solid-state memory is a method of manufacturing a solid-state memory, the solid-state memory including a recording film whose electric characteristics are varied by phase transformation, the method including: forming the recording film by forming a laminate of two or more layers so that a superlattice structure is provided, each of the layers having a parent phase which shows solid-to-solid phase-transformation, the recording film being formed at a temperature not lower than a temperature highest among crystallization temperatures of the parent phases. It is thus possible to manufacture a solid-state memory which requires lower current for recording and erasing data and has a greater rewriting cycle number. | 08-25-2011 |
Paul Fons, Tsukuba JP
| Patent application number | Description | Published |
|---|---|---|
| 20100284218 | SUPERLATTICE DEVICE, MANUFACTURING METHOD THEREOF, SOLID-STATE MEMORY INCLUDING SUPERLATTICE DEVICE, DATA PROCESSING SYSTEM, AND DATA PROCESSING DEVICE - To include a superlattice laminate having laminated thereon a first crystal layer of which crystal lattice is a cubic crystal and in which positions of constituent atoms are reversibly replaced by application of energy, and a second crystal layer having a composition different from that of the first crystal layer, and an orientation layer that is an underlaying layer of the superlattice laminate and causes a laminated surface of the first crystal layer to be (111)-orientated. According to the present invention, the laminated surface of the first crystal layer can be (111)-orientated by using the orientation layer as an underlaying layer. In the first crystal layer of which laminated surface is (111)-orientated, a crystal structure reversibly changes when a relatively low energy is applied. Therefore, characteristics of a superlattice device having this crystal layer can be enhanced. | 11-11-2010 |
Paul Fons, Tsukuba-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100006815 | PHASE CHANGE MEMORY AND RECORDING MATERIAL FOR PHASE CHANGE MEMORY - A recording material for a phase change solid memory may include a uniform-mixed phase that includes: at least one of a Te-containing alkali metal iodide phase and a Te-containing silver iodide phase, and an Sb—Te alloy phase. The recording material shows at least one of a phase change and a phase separation which changes at least one of optical property and electrical property of the recording material. | 01-14-2010 |
| 20100181548 | SOLID-STATE MEMORY AND SEMICONDUCTOR DEVICE - A solid memory may include a recording layer including Ge, Sb and Te as major components. The recording layer may include a superlattice. The recording layer may include multi-layers each having a parent phase showing a phase transformation in solid-states, the phase transformation causing change in electrical property of the recording layer. The recording layer may include an Sb | 07-22-2010 |
| 20110315942 | SOLID-STATE MEMORY - A solid-state memory that requires a lower current during recording and erasing data and can repeatedly rewrite data an increased number of times. In at least one example embodiment, the solid-state memory includes a recording layer that includes a laminated structure in which electric properties are changed in response to a phase separation. The laminated structure includes a film containing an Sb atom(s) and a film containing a Ge atom(s), which films constitute a superlattice structure. In the laminated structure, phase separation of the film containing the Sb atom and the film containing the Ge atom allows data to be recorded and erased efficiently. | 12-29-2011 |
Peter Fons, Christiansfeld DK
| Patent application number | Description | Published |
|---|---|---|
| 20090131891 | Flexible cover for use in flushing of peripheral organs - The apparatus ( | 05-21-2009 |
Pierre Fons, Paris FR
| Patent application number | Description | Published |
|---|---|---|
| 20090069368 | FGF-RECEPTOR AGONIST DIMERIC COMPOUNDS - FGF receptor agonist compounds corresponding to the general formula: M1-L-M2 are disclosed in which M1 and M2, which may be identical or different, each represent, independently of one another, a monomer unit M, and L represents a linker group, wherein the monomer unit is of the general formula I. | 03-12-2009 |