Filippos
Filippos Kasimatis, London GB
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20080222051 | Synthetic currency - A method for formulating a synthetic currency including the steps of borrowing an amount of funds in at least one first currency at a first interest rate, converting a portion of the borrowed funds to at least one second currency, investing the portion of the borrowed funds in an investment that pays interest which covers at least a portion of cost of borrowing the borrowed funds in the first currency, and providing a third currency based on the remaining portion of the borrowed funds. | 09-11-2008 |
Filippos Kottakis, Malden, MA US
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20110008302 | Compositions and methods for immortalizing cells and screening for anti-cancer agents - An embodiment of the invention provides methods and compositions for immortalizing cells, and in another embodiment for reversing immortalization of cells. Methods for screening for anti-cancer agents by identifying compounds that bind to and inhibit activity of an Ndy protein are also provided. Novel cancer diagnostic and prognostic methods using Ndy1, Ezh2 and miR-101 are shown with samples of tissue or cell lines from cancers of lung, colon, ovary, bladder and transitional cell carcinoma. | 01-13-2011 |
Filippos Nikiforou, Peggia CY
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20090220058 | Automatic Incubation and Revival of Messages in Message Systems - A computerized message transaction system has an incubation function and a storage repository. In this system a transaction or a version of the transaction may be stored for a pre-specified period of time, and may be revived at the end of the specified time. | 09-03-2009 |
20130251122 | Automatic Incubation and Revival of Messages in Message Systems - A computerized message transaction system has an incubation function and a storage repository. In this system a transaction or a version of the transaction may be stored for a pre-specified period of time, and may be revived at the end of the specified time. | 09-26-2013 |
Filippos Papadatos, Austin, TX US
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20140374844 | METHOD FOR FORMING METAL SEMICONDUCTOR ALLOYS IN CONTACT HOLES AND TRENCHES - A semiconductor device is provided that includes a gate structure on a channel region of a substrate. A source region and a drain region are present on opposing sides of the channel region. A first metal semiconductor alloy is present on an upper surface of at least one of the source and drain regions. The first metal semiconductor alloy extends to a sidewall of the gate structure. A dielectric layer is present over the gate structure and the first metal semiconductor alloy. An opening is present through the dielectric layer to a portion of the first metal semiconductor alloy that is separated from the gate structure. A second metal semiconductor alloy is present in the opening, is in direct contact with the first metal semiconductor alloy, and has an upper surface that is vertically offset and is located above the upper surface of the first metal semiconductor alloy. | 12-25-2014 |
20150044845 | METHOD FOR FORMING METAL SEMICONDUCTOR ALLOYS IN CONTACT HOLES AND TRENCHES - A semiconductor device is provided that includes a gate structure on a channel region of a substrate. A source region and a drain region are present on opposing sides of the channel region. A first metal semiconductor alloy is present on an upper surface of at least one of the source and drain regions. The first metal semiconductor alloy extends to a sidewall of the gate structure. A dielectric layer is present over the gate structure and the first metal semiconductor alloy. An opening is present through the dielectric layer to a portion of the first metal semiconductor alloy that is separated from the gate structure. A second metal semiconductor alloy is present in the opening, is in direct contact with the first metal semiconductor alloy, and has an upper surface that is vertically offset and is located above the upper surface of the first metal semiconductor alloy. | 02-12-2015 |
Filippos Papadatos, Hopewell Junction, NY US
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20110215409 | STRUCTURE AND METHOD TO MAKE REPLACEMENT METAL GATE AND CONTACT METAL - An electrical device is provided with a p-type semiconductor device having a first gate structure that includes a gate dielectric on top of a semiconductor substrate, a p-type work function metal layer, a metal layer composed of titanium and aluminum, and a metal fill composed of aluminum. An n-type semiconductor device is also present on the semiconductor substrate that includes a second gate structure that includes a gate dielectric, a metal layer composed of titanium and aluminum, and a metal fill composed of aluminum. An interlevel dielectric is present over the semiconductor substrate. The interlevel dielectric includes interconnects to the source and drain regions of the p-type and n-type semiconductor devices. The interconnects are composed of a metal layer composed of titanium and aluminum, and a metal fill composed of aluminum. The present disclosure also provides a method of forming the aforementioned structure. | 09-08-2011 |
Filippos Papadatos, Wappingers Falls, NY US
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20120187420 | STRUCTURE AND METHOD TO MAKE REPLACEMENT METAL GATE AND CONTACT METAL - An electrical device is provided that in one embodiment includes a p-type semiconductor device having a first gate structure that includes a gate dielectric that is present on the semiconductor substrate, a p-type work function metal layer, a metal layer composed of titanium and aluminum, and a metal fill composed of aluminum. An n-type semiconductor device is also present on the semiconductor substrate that includes a second gate structure that includes a gate dielectric, a metal layer composed of titanium and aluminum, and a metal fill composed of aluminum. An interlevel dielectric is present over the semiconductor substrate. The interlevel dielectric includes interconnects to the source and drain regions of the p-type and n-type semiconductor devices. The interconnects are composed of a metal layer composed of titanium and aluminum, and a metal fill composed of aluminum. The present disclosure also provides a method of forming the aforementioned structure. | 07-26-2012 |
20120187460 | METHOD FOR FORMING METAL SEMICONDUCTOR ALLOYS IN CONTACT HOLES AND TRENCHES - A method of forming a semiconductor device is provided that includes forming a first metal semiconductor alloy on a semiconductor containing surface, forming a dielectric layer over the first metal semiconductor alloy, forming an opening in the dielectric layer to provide an exposed surface the first metal semiconductor alloy, and forming a second metal semiconductor alloy on the exposed surface of the first metal semiconductor alloy. In another embodiment, the method includes forming a gate structure on a channel region of a semiconductor substrate, forming a dielectric layer over at least a source region and a drain region, forming an opening in the dielectric layer to provide an exposed surface the semiconductor substrate, forming a first metal semiconductor alloy on the exposed surface of the semiconductor substrate, and forming a second metal semiconductor alloy on the first metal semiconductor alloy. | 07-26-2012 |
20130127058 | LINER-FREE TUNGSTEN CONTACT - A liner-less tungsten contact is formed on a nickel-tungsten silicide with a tungsten rich surface. A tungsten-containing layer is formed using tungsten-containing fluorine-free precursors. The tungsten-containing layer may act as a glue layer for a subsequent nucleation layer or as the nucleation layer. The tungsten plug is formed by standard processes. The result is a liner-less tungsten contact with low resistivity. | 05-23-2013 |
Filippos Papadatos, Elmsford, NY US
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20130154098 | LINER-FREE TUNGSTEN CONTACT - An electrical structure comprises a dielectric layer present on a semiconductor substrate. A contact opening is present through the dielectric layer. A nickel-tungsten alloy silicide is formed over the semiconductor substrate within the contact opening. A tungsten-containing nucleation layer formed within the contact opening covers the nickel-tungsten alloy silicide and at least a portion of a sidewall of the contact opening. A tungsten contact is formed within the contact opening and separated from the nickel-tungsten alloy silicide and at least a portion of the sidewall by the tungsten-containing nucleation layer. | 06-20-2013 |
20140073131 | METHOD TO IMPROVE SEMICONDUCTOR SURFACES AND POLISHING - A method of forming a semiconductor device is disclosed. The method including providing a substrate with at least one insulating layer disposed thereon, the at least one insulating layer including a trench; forming at least one liner layer on the at least one insulating layer; forming a nucleation layer on the at least one liner layer; forming a first metal film on a surface of the nucleation layer; etching the first metal film; and depositing a second metal film on the etched surface of the first metal film, the second metal film substantially forming an overburden above the trench. | 03-13-2014 |