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Filippos
Filippos Kasimatis, London GB
| Patent application number | Description | Published |
|---|---|---|
| 20080222051 | Synthetic currency - A method for formulating a synthetic currency including the steps of borrowing an amount of funds in at least one first currency at a first interest rate, converting a portion of the borrowed funds to at least one second currency, investing the portion of the borrowed funds in an investment that pays interest which covers at least a portion of cost of borrowing the borrowed funds in the first currency, and providing a third currency based on the remaining portion of the borrowed funds. | 09-11-2008 |
Filippos Kottakis, Malden, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20110008302 | Compositions and methods for immortalizing cells and screening for anti-cancer agents - An embodiment of the invention provides methods and compositions for immortalizing cells, and in another embodiment for reversing immortalization of cells. Methods for screening for anti-cancer agents by identifying compounds that bind to and inhibit activity of an Ndy protein are also provided. Novel cancer diagnostic and prognostic methods using Ndy1, Ezh2 and miR-101 are shown with samples of tissue or cell lines from cancers of lung, colon, ovary, bladder and transitional cell carcinoma. | 01-13-2011 |
Filippos Nikiforou, Peggia CY
| Patent application number | Description | Published |
|---|---|---|
| 20090220058 | Automatic Incubation and Revival of Messages in Message Systems - A computerized message transaction system has an incubation function and a storage repository. In this system a transaction or a version of the transaction may be stored for a pre-specified period of time, and may be revived at the end of the specified time. | 09-03-2009 |
Filippos Papadatos, Hopewell Junction, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20110215409 | STRUCTURE AND METHOD TO MAKE REPLACEMENT METAL GATE AND CONTACT METAL - An electrical device is provided with a p-type semiconductor device having a first gate structure that includes a gate dielectric on top of a semiconductor substrate, a p-type work function metal layer, a metal layer composed of titanium and aluminum, and a metal fill composed of aluminum. An n-type semiconductor device is also present on the semiconductor substrate that includes a second gate structure that includes a gate dielectric, a metal layer composed of titanium and aluminum, and a metal fill composed of aluminum. An interlevel dielectric is present over the semiconductor substrate. The interlevel dielectric includes interconnects to the source and drain regions of the p-type and n-type semiconductor devices. The interconnects are composed of a metal layer composed of titanium and aluminum, and a metal fill composed of aluminum. The present disclosure also provides a method of forming the aforementioned structure. | 09-08-2011 |