Patent application number | Description | Published |
20090252963 | METHOD FOR PREPARING A SYNTHETIC TALC COMPOSITION FROM A KEROLITE COMPOSITION - The invention relates to a method for preparing a synthetic talc composition. According to said method, a kerolite composition is subjected to an anhydrous thermal treatment carried out at a pressure lower than 5 bar, from over a few hours up to over a few days, at a treatment temperature higher than 300° C. The invention also relates to a synthetic talc composition prepared in this way, the synthetic talc particles of the composition being exclusively of chemical formula —(Si | 10-08-2009 |
20090253569 | PREPARATION OF A COMPOSITION OF A SWELLING T.O.T.-T.O.T. INTERLAYER - The invention relates to a method for preparing a composition comprising mineral particles, that is swelling TOT-TOT interlayer particles, formed by interlayering between: at least one non-swelling mineral phase formed by a stack of elementary laminae of the phyllogermanosilicate 2/1 type and of formula —(Si | 10-08-2009 |
20090261294 | METHOD FOR PREPARING TALCOSE COMPOSITIONS COMPRISING SYNTHETIC MINERAL PARTICLES CONTAINING SILICON, GERMANIUM AND METAL - The invention relates to a method for preparing a composition, that is a talcose composition, comprising synthetic mineral particles which contain silicon, germanium and metal, have a crystalline and lamellar structure, and are of formula (Si | 10-22-2009 |
20110015102 | COMPOSITE MATERIAL CONSISTING OF A METAL MATRIX IN WHICH SYNTHETIC LAMELLAR PHYLLOSILICATED NANOPARTICLES ARE DISTRIBUTED - A composite material includes a metal matrix in which synthetic lamellar phyllosilicated mineral particles are distributed. The lamellar phyllosilicated mineral particles are particles also called synthetic phyllosilicated nanoparticles ( | 01-20-2011 |
Patent application number | Description | Published |
20090246901 | PROCESS OF MAKING A MICROELECTRONIC LIGHT-EMITTING DEVICE ON SEMI-CONDUCTING NANOWIRE FORMED ON A METALLIC SUBSTRATE - A process of making a microelectronic light-emitting device, including: a) growth on a metallic support of multiple wires based on one or more semi-conducting materials designed to emit radiant light, and b) formation of at least one electrical conducting zone of contact on at least one of the wires. | 10-01-2009 |
20100025654 | LIGHT-EMITTING DIODE IN SEMICONDUCTOR MATERIAL AND ITS FABRICATION METHOD - The subject of the invention is a light-emitting diode comprising a structure ( | 02-04-2010 |
20100273317 | METHOD OF GROWING, ON A DIELETRIC MATERIAL, NANOWIRES MADE OF SEMI-CONDUCTOR MATERIALS CONNECTING TWO ELECTRODES - Electrodes made from metallic material are formed on a layer of dielectric material. A bottom layer of at least one of the electrodes constitutes a catalyst material in direct contact with the layer of dielectric material. Nanowires are grown by means of the catalyst, between the electrodes, parallel to the layer of dielectric material. The nanowires connecting the two electrodes are then made from single-crystal semi-conductor material and in contact with the layer of dielectric material. | 10-28-2010 |
20110063416 | 3D IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME - The invention concerns a 3D imaging device comprising a photodetector ( | 03-17-2011 |
20120021554 | METHOD OF FORMATION OF NANOWIRES AND METHOD OF MANUFACTURE OF ASSOCIATED OPTICAL COMPONENT - A method of formation of nanowires at a surface of a substrate attached to a solid immersion lens. The method includes formation of a catalyst element at the surface of the substrate and growth of nanowires from the catalyst element formed at the surface of the substrate. The catalyst element is a metal nanoparticle and the formation of the catalyst element at the surface of the substrate deposits the metal nanoparticle using a light beam focused by the solid immersion lens at the surface of the substrate. | 01-26-2012 |
20140202378 | METHOD FOR PRODUCING AN ORGANISED NETWORK OF SEMICONDUCTOR NANOWIRES, IN PARTICULAR MADE OF ZnO - A method of forming an organized network of ZnO nanowires including the steps of obtaining, on a substrate, a ZnO layer of Zn polarity, by epitaxial growth at low temperature, advantageously in the range from 400° C. to 650° C., and advantageously in the presence of dioxygen (O2); forming, on this layer, a mask provided with openings for the subsequent growth of nanorods; epitaxially growing ZnO nanorods. | 07-24-2014 |