| 20100206351 | PHOTONIC USE OF INTERMEDIATE BAND MATERIALS ON A CHALCOGENIDE-TYPE SEMICONDUCTOR - The invention relates to the use, in the manufacturing of materials or devices for photonic applications, of chalcogenide-type compounds having an octahedrally coordinated indium element and wherein a transition element is introduced in octahedral position generating a partially occupied intermediate band separate from those of valence and conduction of the initial semiconductor, according to quantum mechanics calculations. This enables, by absorption of two photons having energy lower than the prohibited bandwidth of the initial semiconductor, a result equivalent to that achieved, without said intermediate band, by the absorption of a higher-energy photon. The use of such a material can thereby improve yield and performance of various photovoltaic, photocatalytic, photoelectrochemical, optoelectronic or photonic conversion devices. Indium sulfide substituted in part with vanadium or titanium is one of the specific materials having these properties that is synthesised according to the invention. | 08-19-2010 |
