Patent application number | Description | Published |
20080210951 | Method For Fabricating High-Quality Semiconductor Light-Emitting Devices On Silicon Substrates - One embodiment of the present invention provides a semiconductor light-emitting device which includes: (1) a silicon (Si) substrate; (2) a silver (Ag) transition layer which is formed on a surface of the Si substrate, wherein the Ag transition layer covers the Si substrate surface; and (3) an InGaAlN, ZnMgCdO, or ZnBeCdO-based semiconductor light-emitting structure which is fabricated on the Ag-coated Si substrate. Note that the Ag transition layer prevents the Si substrate surface from forming an amorphous overcoat with reactant gases used for growing the semiconductor light-emitting structure. | 09-04-2008 |
20080224154 | Semiconductor Light-Emitting Device With Metal Support Substrate - One embodiment of the present invention provides a semiconductor light-emitting device which includes a multi-layer structure. The multilayer structure comprises a first doped layer, an active layer, and a second doped layer. The semiconductor light-emitting device further includes a first Ohmic-contact layer configured to form a conductive path to the first doped layer, a second Ohmic-contact layer configured to form a conductive path to the second doped layer, and a support substrate comprising not less than 15% chromium (Cr) measured in weight percentage. | 09-18-2008 |
20080230792 | Semiconductor Light-Emitting Device with Electrode for N-Polar Ingaain Surface - One embodiment of the present invention provides a semiconductor light-emitting device, which comprises: an upper cladding layer; a lower cladding layer; an active layer between the upper and lower cladding layers; an upper ohmic-contact layer forming a conductive path to the upper cladding layer; and a lower ohmic-contact layer forming a conductive path the lower cladding layer. The lower ohmic-contact layer has a shape substantially different from the shape of the upper ohmic-contact layer, thereby diverting a carrier flow away from a portion of the active layer which is substantially below the upper ohmic-contact layer when a voltage is applied to the upper and lower ohmic-contact layers. | 09-25-2008 |
20080230799 | Semiconductor Light-Emitting Device with Electrode for N-Polar Ingaain Surface - One embodiment of the present invention provides a semiconductor light-emitting device. The semiconductor light-emitting device includes a substrate, a p-type doped InGaAIN layer, an n-type doped InGaAIN layer, and an active layer situated between the p-type doped and n-type doped InGaAIN layers. The semiconductor light-emitting device further includes an n-side Ohmic-contact layer coupled to an N-polar surface of the n-type doped InGaAIN layer. The Ohmic-contact layer comprises at least one of Au, Ni, and Pt, and at least one of group IV elements. | 09-25-2008 |
20080246048 | Semiconductor Light-Emitting Device - A semiconductor light-emitting device, the device includes a substrate, a semiconductor stacked layer, a lead electrode and a lead, wherein the semiconductor stacked layer at least includes a N-type layer and a P-type layer, at least one of the N-type layer and the P-type layer has an opening, the opening is just beneath the lead; or includes a conductive substrate having a main surface and a back surface, an adhesive metal layer, a reflective/ohmic metal layer, a semiconductor stacked layer, a lead electrode and a lead sequentially deposited on the main surface of the substrate, the reflective/ohmic metal layer has an opening, the opening is just beneath the lead. | 10-09-2008 |
20080248633 | Method for Manufacturing Indium Gallium Aluminium Nitride Thin Film on Silicon Substrate - The method for manufacturing the indium gallium aluminium nitride (InGaAlN) thin film on silicon substrate, which comprises the following steps: introducing magnesium metal for processing online region mask film, that is, or forming one magnesium mask film layer or metal transition layer; then forming one metal transition layer or magnesium mask layer, finally forming one layer of indium gallium aluminium nitride semiconductor layer; or firstly forming one layer of metal transition layer on silicon substrate and then forming the first indium gallium aluminium nitride semiconductor layer, magnesium mask layer and second indium gallium aluminium nitride semiconductor layer in this order. This invention can reduce the dislocation density of indium gallium aluminium nitride materials and improve crystal quality. | 10-09-2008 |
20090026473 | InGaAlN LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - There is provided an InGaAlN light-emitting device and a manufacturing method thereof. The light emitting device includes a conductive substrate having a main surface and a back surface, a metal bonding layer formed on the main surface of the substrate, a light reflecting layer formed on the bonding layer, a semiconductor multilayer structure including at least a p-type and an n-type InGaAlN layer disposed on the reflecting layer, the p-type InGaAlN layer directly contacting the reflecting layer, and ohmic electrodes disposed on said n-type InGaAlN layer and on the back surface of the conductive substrate, respectively. | 01-29-2009 |
20090050927 | METHOD OF FABRICATION InGaAlN FILM AND LIGHT-EMITTING DEVICE ON A SILICON SUBSTRATE - There is provided a method of fabricating InGaAlN film on a silicon substrate, which comprises the following steps of forming a pattern structured having grooves and mesas on the silicon substrate, and depositing InGaAlN film on the surface of substrate, wherein the depth of the grooves is more than 6 nm, and the InGaAlN film formed on the mesas of both sides of the grooves are disconnected in the horizontal direction. The method may grow high quality, no crack and large area of InGaAlN film by simply treating the substrate. At the same time, there is also provided a method of fabricating InGaAlN light-emitting device by using the silicon substrate. | 02-26-2009 |