Patent application number | Description | Published |
20120261635 | RESISTIVE RANDOM ACCESS MEMORY (RAM) CELL AND METHOD FOR FORMING - A resistive random access memory cell over a substrate includes a memory stack structure and a sidewall spacer. The memory stack structure is over the substrate and includes a first electrode layer, a second electrode layer, and a metal oxide layer between the first electrode layer and the second electrode layer. The metal oxide layer has a sidewall. The sidewall spacer is adjacent to the sidewall and has a composition including silicon, carbon, and nitrogen. | 10-18-2012 |
20120261636 | RESISTIVE RANDOM ACCESS MEMORY (RAM) CELL AND METHOD FOR FORMING - A resistive random access memory cell uses a substrate and includes a gate stack over the substrate. The gate stack includes a first copper layer over the substrate, a copper oxide layer over the first copper layer, and a second copper layer over the copper oxide layer. | 10-18-2012 |
20130264533 | RERAM DEVICE STRUCTURE - A resistive random access memory (ReRAM) includes a first metal layer having a first metal and a metal-oxide layer on the first metal layer. The metal-oxide layer inlcudes the first metal. The ReRAM further includes a second metal layer over the metal-oxide layer and a first continuous conductive barrier layer in physical contact with sidewalls of the first metal layer and of the metal-oxide layer. | 10-10-2013 |
20130320284 | FIELD FOCUSING FEATURES IN A RERAM CELL - A resistive random access memory (ReRAM) cell, comprising a first conductive electrode and a dielectric storage material layer over the first conductive electrode. The dielectric storage material layer is conducive to the formation of conductive filaments during the application of a filament forming voltage to the cell. The cell includes a second conductive electrode over the dielectric storage material layer and an interface region comprising a plurality of interspersed field focusing features that are not photo-lithographically defined. The interface region is located between the first conductive electrode and the dielectric storage material layer or between the dielectric storage material layer and the second conductive electrode. | 12-05-2013 |
20130320285 | FIELD FOCUSING FEATURES IN A RERAM CELL - A resistive random access memory (ReRAM) cell comprising a first conductive electrode and a dielectric storage material layer over the first conductive electrode. The dielectric storage material layer is conducive to the formation of conductive filaments during the application of a filament forming voltage to the cell. The cell includes a second conductive electrode over the dielectric storage material layer and a layer of conductive nanoclusters ( | 12-05-2013 |
20130322152 | CIRCUITRY INCLUDING RESISTIVE RANDOM ACCESS MEMORY STORAGE CELLS AND METHODS FOR FORMING SAME - A method of forming a circuitry includes providing a substrate comprising a plurality of die. Each die includes a plurality of resistive random access memory (RRAM) storage cells. The method further includes concurrently initializing substantially all of the RRAM storage cells on the same wafer. Initializing can include applying a voltage potential across the RRAM storage cells. | 12-05-2013 |
20140036568 | RERAM DEVICE STRUCTURE - A resistive random access memory (ReRAM) device can comprise a first metal layer and a first metal-oxide layer on the first metal layer. The first metal-oxide layer comprises the first metal. A second metal layer can comprise a second metal over and in physical contact with the first metal-oxide layer. A first continuous non-conductive barrier layer can be in physical contact with sidewalls of the first metal layer and sidewalls of the first metal-oxide layer. A second metal-oxide layer can be on the second metal layer. The second metal-oxide layer can comprise the second metal layer. A third metal layer can be over and in physical contact with the second metal-oxide layer. The first and second metal-oxide layers, are further characterized as independent storage mediums. | 02-06-2014 |
20140295639 | FIELD FOCUSING FEATURES IN A RERAM CELL - A resistive random access memory (ReRAM) cell comprising a first conductive electrode and a dielectric storage material layer over the first conductive electrode. The dielectric storage material layer is conducive to the formation of conductive filaments during the application of a filament forming voltage to the cell. The cell includes a second conductive electrode over the dielectric storage material layer and a layer of conductive nanoclusters ( | 10-02-2014 |