| Patent application number | Description | Published |
| 20100072671 | NANO-IMPRINT LITHOGRAPHY TEMPLATE FABRICATION AND TREATMENT - A nano-imprint lithography template includes a rigid support layer, a cap layer, and a flexible cushion layer positioned between the support layer and the cap layer. Treating an imprint lithography template includes heating the template to desorb gases from the template. Heating the template includes radiating the template at a selected wavelength with, for example, infrared radiation. The selected wavelength may correspond to a wavelength at which the template material is strongly absorbing. | 03-25-2010 |
| 20100084376 | NANO-IMPRINT LITHOGRAPHY TEMPLATES - Porous nano-imprint lithography templates may include pores, channels, or porous layers arranged to allow evacuation of gas trapped between a nano-imprint lithography template and substrate. The pores or channels may be formed by etch or other processes. Gaskets may be formed on an nano-imprint lithography template to restrict flow of polymerizable material during nano-imprint lithography processes. | 04-08-2010 |
| 20100090341 | NANO-PATTERNED ACTIVE LAYERS FORMED BY NANO-IMPRINT LITHOGRAPHY - Patterned active layers formed by nano-imprint lithography for use in devices such as photovoltaic cells and hybrid solar cells. One such photovoltaic cell includes a first electrode and a first electrically conductive layer electrically coupled to the first electrode. The first conductive layer has a multiplicity of protrusions and recesses formed by a nano-imprint lithography process. A second electrically conductive layer substantially fills the recesses and covers the protrusions of the first conductive layer, and a second electrode is electrically coupled to the second conductive layer. A circuit electrically connects the first electrode and the second electrode. | 04-15-2010 |
| 20100104852 | Fabrication of High-Throughput Nano-Imprint Lithography Templates - An imprint lithography template includes a porous material defining a multiplicity of pores with an average pore size of at least about 0.4 nm. The porous material includes silicon and oxygen, and a ratio of Young's modulus (E) to relative density of the porous material with respect to fused silica (p | 04-29-2010 |
| 20110030770 | NANOSTRUCTURED ORGANIC SOLAR CELLS - Solar cells having at least one N-type material layer and at least one P-type material layer forming a patterned p-n junction are described. A conducting layer may provide electrical communication between the p-n junction and an electrode layer. | 02-10-2011 |
| 20110180127 | SOLAR CELL FABRICATION BY NANOIMPRINT LITHOGRAPHY - Fabricating a solar cell stack includes forming a nanopatterned polymeric layer on a first surface of a silicon wafer and etching the first surface of the silicon wafer to transfer a pattern of the nanopatterned polymeric layer to the first surface of the silicon wafer. A layer of reflective electrode material is formed on a second surface of the silicon wafer. The nanopatterned first surface of the silicon wafer undergoes a buffered oxide etching. After the buffered oxide etching, the nanopatterned first surface of the silicon wafer is treated to decrease a contact angle of water on the nanopatterned first surface. Electron donor material is deposited on the nanopatterned first surface of the silicon wafer to form an electron donor layer, and a transparent electrode material is deposited on the electron donor layer to form a transparent electrode layer on the electron donor layer. | 07-28-2011 |
| 20110277827 | NANOSTRUCTURED SOLAR CELL - Systems and methods for fabrication of nanostructured solar cells having arrays of nanostructures are described, including nanostructured solar cells having a repeating pattern of pyramid nanostructures, providing for low cost thin-film solar cells with improved PCE. | 11-17-2011 |
| 20120009413 | ENHANCED DENSIFICATION OF SILICON OXIDE LAYERS - Densifying a multi-layer substrate includes providing a substrate with a first dielectric layer on a surface of the substrate. The first dielectric layer includes a multiplicity of pores. Water is introduced into the pores of the first dielectric layer to form a water-containing dielectric layer. A second dielectric layer is provided on the surface of the water-containing first dielectric layer. The first and second dielectric layers are annealed at temperature of 600° C. or less. In an example, the multi-layer substrate is a nanoimprint lithography template. The second dielectric layer may have a density and therefore an etch rate similar to that of thermal oxide, yet may still be porous enough to allow more rapid diffusion of helium than a thermal oxide layer. | 01-12-2012 |