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Felsl
Andreas Felsl, Bad Wiessee DE
| Patent application number | Description | Published |
|---|---|---|
| 20110042915 | SUSPENSION FORK - Disclosed is a suspension fork for a two-wheeler with a fork leg comprising a stanchion tube fixed to the frame which immerses in a slide tube in sections, wherein the guiding between the slide tube and the stanchion tube is performed via a bearing arrangement. In accordance with the invention, an additional lubricant volume is provided by means of which a sufficient lubrication of the bearing arrangement is ensured. | 02-24-2011 |
Hans Peter Felsl, Muenchen DE
| Patent application number | Description | Published |
|---|---|---|
| 20080283868 | Semiconductor Device - A semiconductor device includes a first layer having a first conductivity type, a second layer having a second conductivity type, a third layer having the second conductivity type, one or more first zones having the first conductivity type and located within the second layer, wherein each one of the one or more first zones is adjacent to the third layer, and one or more second zones having the second conductivity type and located within the second layer, wherein each one of the one or more second zones is adjacent to one or more of the one or more first zones. | 11-20-2008 |
| 20100148215 | IGBT Having One or More Stacked Zones Formed within a Second Layer of the IGBT - An IGBT includes a first region, a second region located within the first region, a first contact coupled to the first region, a first layer arranged below the first region, a gate overlying at least a portion of the first region between the second region and the first layer and a second layer formed under the first layer. One or more stacked zones are formed within the second layer. Each one or more stacked zones includes a first zone and a second zone that overlies the first zone. Each first zone is inversely doped with respect to the second layer and each second zone is inversely doped with respect to the first zone. The IGBT further includes a third layer formed under the second layer and a second contact coupled to the third layer. | 06-17-2010 |
| 20110018029 | SEMICONDUCTOR DEVICE HAVING A FLOATING SEMICONDUCTOR ZONE - A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region. | 01-27-2011 |
Hans Peter Felsl, Munchen DE
| Patent application number | Description | Published |
|---|---|---|
| 20090267200 | METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE INCLUDING LASER ANNEALING - A method for manufacturing a semiconductor device by laser annealing. One embodiment provides a semiconductor substrate having a first surface and a second surface. The second surface is arranged opposite to the first surface. A first dopant is introduced into the semiconductor substrate at the second surface such that its peak doping concentration in the semiconductor substrate is located at a first depth with respect to the second surface. A second dopant is introduced into the semiconductor surface at the second surface such that its peak doping concentration in the semiconductor substrate is located at a second depth with respect to the second surface, wherein the first depth is larger than the second depth. At least a first laser anneal is performed by directing at least one laser beam pulse onto the second surface to melt the semiconductor substrate, at least in sections, at the second surface. | 10-29-2009 |
Hans-Peter Felsl, Munich DE
| Patent application number | Description | Published |
|---|---|---|
| 20120098097 | IGBT MODULE AND A CIRCUIT - An IGBT module is provided. The IGBT module has at least a first individual IGBT with a first softness during switching-off the IGBT module, and at least a second individual IGBT connected in parallel to the at least one first IGBT. The at least one second individual IGBT has a second softness during switching-off the IGBT module which is different than the first softness. Further a circuit and an electronic power device having two individual IGBTs, which are connected in parallel, are provided. | 04-26-2012 |