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Faul

Andreas Faul, Bietigheim-Bissingen DE

Patent application numberDescriptionPublished
20110162810METHOD AND DEVICE FOR PROCESSING WASTE PAPER - The invention relates to a method for processing waste paper according to the following steps: a) the waste paper is decomposed into fibres, b) the fibres are washed, c) the fibres are subjected to a dispersion process, d) the fibres are subjected to a flotation method, e) the fibres are processed for further treatment in a paper machine. The liquid from the fibres obtained in step b) is reintroduced into the fibre flow prior to step d). The invention also relates to a device for carrying out said method.07-07-2011

Charl Faul, Bristol GB

Patent application numberDescriptionPublished
20080220339Film Forming Photosensitive Materials for the Light Induced Generation of Optical Anisotrophy - This invention relates to a self supporting or substrate-supported film or layer of a photosensitive material comprising a water insoluble complex having one of the following sum formulae (I) to (IV) n [R—P—R′]09-11-2008

Dieter Faul, Niederkirchen DE

Patent application numberDescriptionPublished
20080269446Method for Producing Carboxylate-Rich Copolymers from Monoethylenically Unsaturated Monocarboxylic and Dicarboxylic Acids and Carboxylate-Rich Copolymers Having a Low Neurtralization Degree - Partially neutralized carboxylate-rich copolymers, processes for their preparation and methods of using the same are disclosed, the copolymers comprising: monomers (A), (B), and (C); wherein monomer (A) comprises at least one monoethylenically unsaturated monocarboxylic acid, and is present in an amount of 30% to 79.99% by weight; wherein monomer (B) comprises at least one monoethylenically unsaturated dicarboxylic acid selected from the group consisting of acids corresponding to general formula I, acids corresponding to general formula II, anhydrides thereof, and other hydrolyzable derivatives thereof, and is present in an amount of 20.01% to 70% by weight:10-30-2008

Juergen Faul, Radebeul DE

Patent application numberDescriptionPublished
20080308870INTEGRATED CIRCUIT WITH A SPLIT FUNCTION GATE - An integrated circuit is disclosed. One embodiment provides a field-effect transistor including a gate electrode, a channel region and a first source/drain region. The gate electrode may include a main section determining a first flat band voltage between the gate electrode and the channel region and a first lateral section that is in contact with the main section and that determines a second flat band voltage between the gate electrode and the first source/drain region. The first and second flat band voltages differ by at least 0.1 eV.12-18-2008
20100025826Field Effect Transistors with Channels Oriented to Different Crystal Planes - An integrated circuit includes a first field effect transistor of a first carrier type and a second field effect transistor of a second, different carrier type. In a conductive state, a first channel of the first field effect transistor is oriented to one of a first set of equivalent crystal planes of a semiconductor substrate and a second channel of the second field effect transistor is oriented to at least one of a second, different set of equivalent crystal planes. The first set of equivalent crystal planes is parallel to a main surface of the semiconductor substrate and the second set of equivalent crystal planes is perpendicular to the main surface.02-04-2010

Patent applications by Juergen Faul, Radebeul DE

Jurgen Faul, Radebeul DE

Patent application numberDescriptionPublished
20090098701Method of manufacturing an integrated circuit - The present invention provides a method of manufacturing an integrated circuit comprising the steps of: providing a semiconductor substrate, etching at least one trench into a surface of said semiconductor substrate, performing an ion implantation step, wherein a direction of said ion implantation step is parallel to a vertical centre line of said trench, and performing a single oxidation step to form a first oxide layer with a first layer thickness covering a bottom of said at least one trench and a second oxide layer with a second layer thickness covering the sidewalls of said at least one trench, wherein said first layer thickness differs from said second layer thickness.04-16-2009
20090121286Integrated Circuit Comprising a Field Effect Transistor and Method of Fabricating the Same - An integrated circuit includes a field effect transistor including: a gate electrode disposed adjacent to a surface of semiconductor substrate and a source/drain region disposed in the semiconductor substrate and adjacent to the surface. A net dopant concentration of a first section of the source/drain region decreases towards the gate electrode along a direction perpendicular to the surface.05-14-2009

Patent applications by Jurgen Faul, Radebeul DE

Robert Faul, Muenchen DE

Patent application numberDescriptionPublished
20120091594Method of Producing a Chip Package, and Chip Package - A method of producing a chip package includes providing a substrate comprising a first recess having a recess bottom and recess side walls. A chip comprising a chip backside is introduced into the recess such that the chip does not protrude from the recess and such that a gap remains between the recess side walls and the chip, the chip backside being attached to the recess bottom. The gap is filled with a filler material.04-19-2012

Stephen Daniel Faul, County Cork IE

Patent application numberDescriptionPublished
20120101401METHOD FOR THE REAL-TIME IDENTIFICATION OF SEIZURES IN AN ELECTROENCEPHALOGRAM (EEG) SIGNAL - The present invention relates to a method for the real-time identification of seizures in an Electroencephalogram (EEG) signal. The method provides for patient-independent seizure identification by use of a multi-patient trained generic Support Vector Machine (SVM) classifier. The SVM classifier is operates on a large feature vector combining features from a wide variety of signal processing and analysis techniques. The method operates sufficiently accurately to be suitable for use in a clinical environment. The method may also be combined with additional classifiers, such a Gaussian Mixture Model (GMM) classifier, for improved robustness, and one or more dynamic classifiers such as an SVM using sequential kernels for improved temporal analysis of the EEG signal.04-26-2012