Patent application number | Description | Published |
20110186950 | METHOD OF FABRICATING IMAGE SENSOR AND IMAGE SENSOR THEREOF - A method of fabricating an image sensor and an image sensor thereof are provided. The method comprises: providing a mask; utilizing the mask at a first position to form a first group of micro-lenses having a first height on a first group of color filters of a color filter array on a pixel array; shifting the mask from the first position to a second position, wherein a distance between the first position and the second position is substantially equal to a width of a pixel of the pixel array; and utilizing the mask at the second position to form a second group of micro-lenses having a second height, different from the first height, on a second group of color filters of the color filter array. | 08-04-2011 |
20110278687 | BACKSIDE-ILLUMINATED SENSOR WITH NOISE REDUCTION - A backside-illuminated sensor includes a substrate, at least one lens and at least one pixel structure. The substrate has a front surface and a backside surface, and the lens is formed on the backside surface of the substrate and the pixel structure is formed on a pixel area included in the front surface of the substrate, where a projected area of the pixel area on the backside surface in a thickness direction of the substrate is covered by the lens. The pixel structure includes a first power node for receiving a first supply voltage, a second power node for receiving a second supply voltage different from the first supply voltage, a sensing element and a capacitor for noise reduction. The sensing element generates a sensing signal according to an incident luminance from the lens. | 11-17-2011 |
20110284984 | IMAGE SENSOR AND FABRICATING METHOD THEREOF - The present invention provides an image sensor and a fabricating method thereof capable of approaching higher quantum efficiency and reducing cost. The method comprises: providing a substrate; forming a pixel region on a top surface of the substrate; forming an interlayer insulating layer and at least a metal line on the pixel region; forming an isolation carrier layer having a hole array therein on the interlayer insulating layer; grinding a lower surface of the substrate to reduce the thickness of the substrate; placing a plurality of conductors into the hole array to form a plurality of bumps on the isolation carrier layer. | 11-24-2011 |
20110291211 | IMAGE SENSOR AND RELATED FABRICATING METHOD THEREOF - A fabricating method of an image sensor includes the steps of: providing a substrate; forming sensing elements on the substrate; forming microlenses on the sensing elements; filling a stuffed material on the microlenses, and air regions are formed in the stuffed material; and forming optical filters on the stuffed material. | 12-01-2011 |
20120032241 | IMAGE SENSOR - An image sensor includes: a substrate, at least a pixel, and at least a light shield is provided. Wherein the pixel includes a photodiode and at least a transistor, and the transistor is connected to a metal line via a contact. The light shield is positioned around at least one side of the pixel, wherein the light shield is made while forming the contact. | 02-09-2012 |
20120080766 | Image Sensing Device and Fabrication Thereof - An image sensing device is disclosed, including an epitaxy layer having the a conductivity type, including a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light, wherein the wavelength of the first incident light is longer than that of the second incident light and the wavelength of the second incident light is longer than that of the third incident light. A photodiode is disposed in an upper portion of the epitaxy layer, and a first deep well for reducing pixel-to-pixel talk of the image sensing device is disposed in a lower portion of the epitaxy layer in the second pixel area and the third pixel area, wherein at least a portion of the epitaxy layer in first pixel area does not include the first deep well. | 04-05-2012 |
20120193691 | BACK-SIDE ILLUMINATION IMAGE SENSOR - A back side illumination (BSI) image sensor includes at least one pixel. The pixel area includes a photo diode and a transfer transistor. The transfer transistor has a control electrode made of a gate poly and a gate oxide for receiving a control instruction, a first electrode coupled to the photo diode, and a second electrode, wherein an induced conduction channel of the transfer transistor partially surrounds a recessed space which is filled with the gate poly and the gate oxide of the first transistor. | 08-02-2012 |
20120280343 | BACK-SIDE ILLUMINATION IMAGE SENSOR AND METHOD FOR FABRICATING BACK-SIDE ILLUMINATION IMAGE SENSOR - A method for fabricating a back-side illumination image sensor includes: implanting a first type of dopant into an epitaxial layer disposed over a first side of a substrate layer to form a first dopant layer in a first side of the epitaxial layer; adhering a carry layer over the first dopant layer for carrying the substrate layer; grinding a second side of the substrate layer for exposing a second side of the epitaxial layer; implanting the first type of dopant into the epitaxial layer from the second side of the epitaxial layer to form a second dopant layer in the second side of the epitaxial layer; forming at least one metal layer over the second dopant layer after forming the second dopant layer in the second side of the epitaxial layer; removing the carry layer; and forming a color filtering module over the first dopant layer. | 11-08-2012 |
20130122636 | METHOD FOR FORMING AN IMAGE SENSING DEVICE - A method for forming an image sensing device is disclosed. An epitaxy layer having the first conductivity type is formed on a substrate, wherein the epitaxy layer comprises a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light. A first deep well is formed in a lower portion of the epitaxy layer for reducing pixel-to-pixel talk of the image sensing device. A second deep well is formed in a lower portion of the epitaxy layer. | 05-16-2013 |
Patent application number | Description | Published |
20090038025 | Selection system for maize transformation - The present invention relates to improved methods for the incorporation of DNA into the genome of a | 02-05-2009 |
20090249514 | Improved Methods for the Production of Stably Transformed, Fertile Zea Mays Plants - The present invention relates to improved methods for the incorporation of DNA into the genome of a | 10-01-2009 |
20100162428 | Method Of Excising A Nucleic Acid Sequence From A Plant Genome - The present invention relates to a method for excising a nucleic acid sequence from the genome of a plant or a plant cell. This method is based on the steps of transforming a plant cell with a construct encoding a DNA double strand break inducing enzyme (DSBI), generating a transgenic plant line, performing a transient assay to analyze the functionality of the transgenic enzyme, crossing the plant line with a line containing a nucleic acid sequence to be excised and performing an immature embryo conversion or a tissue culture regeneration through callus formation. The method can also be reversed, which means that a plant cell is transformed with a construct encoding a nucleic acid sequence to be excised, and the crossing is performed with a plant line containing a DSBI. As an alternative to the crossing step, a re-transformation of a transgenic plant line with a second construct can also be performed. The invention is also directed to a plant obtained by this method, or progeny, propagation material, part, tissue, cell or cell culture, derived from such a plant. Finally, the invention relates to the use of a plant or progeny, propagation material, part, tissue, cell or cell culture, derived from this method, as aliment, fodder or seeds or for the production of pharmaceuticals or chemicals. | 06-24-2010 |