| Patent application number | Description | Published |
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| 20080303121 | Integrated Electronic Circuitry and Heat Sink - A multi-layer heatsink module for effecting temperature control in a three-dimensional integrated chip is provided. The module includes a high thermal conductivity substrate having first and second opposing sides, and a gallium nitride (GaN) layer disposed on the first side of the substrate. An integrated array of passive and active elements defining electronic circuitry is formed in the GaN layer. A metal ground plane having first and second opposing sides is disposed on the second side of the substrate, with the first side of the ground plane being adjacent to the second side of the substrate. A dielectric layer of low thermal dielectric material is deposited on the back side of the ground plane, and a metal heatsink is bonded to the dielectric layer. A via extends through the dielectric layer from the metal heatsink to the metal ground plane. | 12-11-2008 |
| 20100170325 | SYSTEM FOR HYDROGEN SENSING - Exemplary embodiments provide a self-powered wireless gas sensor system and a method for gas sensing using the system. The system can be used to detect and constantly track a presence of various gases including hydrogen, ozone and/or any hydrocarbon gas, and remotely transmit the sensing signal. The system can include a low power gas sensor that consumes less than about 30 nano-watts of power. As a result, the system can detect the presence of hydrogen at about 10 ppm. The sensor can also provide a fast response time of about 1-2 seconds. In various embodiments, the system can be physically small and packaged with all components assembled as a single compact unit. | 07-08-2010 |
| 20100188069 | SENSORS USING HIGH ELECTRON MOBILITY TRANSISTORS - Embodiments of the invention include sensors comprising high electron mobility transistors (HEMTs) with capture reagents on a gate region of the HEMTs. Example sensors include HEMTs with a thin gold layer on the gate region and bound antibodies; a thin gold layer on the gate region and chelating agents; a non-native gate dielectric on the gate region; and nanorods of a non-native dielectric with an immobilized enzyme on the gate region. Embodiments including antibodies or enzymes can have the antibodies or enzymes bound to the Au-gate via a binding group. Other embodiments of the invention are methods of using the sensors for detecting breast cancer, prostate cancer, kidney injury, glucose, metals or pH where a signal is generated by the HEMT when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor. | 07-29-2010 |
| 20110045600 | OXYGEN AND CARBON DIOXIDE SENSING - A high electron mobility transistor (HEMT) capable of performing as a CO | 02-24-2011 |
| 20110068372 | SENSORS USING HIGH ELECTRON MOBILITY TRANSISTORS - Embodiments of the invention include sensors comprising AlGaAs/GaAs high electron mobility transistors (HEMTs), inGaP/GaAs HEMTs. InAlAs/InGaAs HEMTs, AlGaAs/InGaAs PHEMTs, InAlAs/InGaAs PHEMTs, Sb based HEMTs, or InAs based HEMTs, the HEMTs having functionalization at a gate surface with target receptors. The target receptors allow sensitivity to targets (or substrates) for detecting breast cancer, prostate cancer, kidney injury, chloride, glucose, metals or pEI where a signal is generated by the HEMI when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor. | 03-24-2011 |
| 20110074381 | SENSORS USING HIGH ELECTRON MOBILITY TRANSISTORS - Embodiments of the invention include sensors comprising high electron mobility transistors (HEMTs) with capture reagents on a gate region of the HEMTs. Example sensors include HEMTs with a thin gold layer on the gate region and bound antibodies; a thin gold layer on the gate region and chelating agents; a non-native gate dielectric on the gate region; and nanorods of a non-native dielectric with an immobilized enzyme on the gate region. Embodiments including antibodies or enzymes can have the antibodies or enzymes bound to the Au-gate via a binding group. Other embodiments of the invention are methods of using the sensors for detecting breast cancer, prostate cancer, kidney injury, glucose, metals or pH where a signal is generated by the HEMT when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor. | 03-31-2011 |
| 20110084713 | CHLORIDE DETECTION - A high electron mobility transistor (HEMT) capable of performing as a chlorine sensor is disclosed. In one implementation, a silver chloride layer can be provided on a gate region of the HEMT. In one application, the HEMTs can be used for the measurement and detection of chloride in bio-sensing applications. In another application, the HEMTs can be used for the detection of chloride in water for environmental and health applications. | 04-14-2011 |
| 20110088456 | NORMALIZED HYDROGEN SENSING AND METHODS OF FABRICATING A NORMALIZED HYDROGEN SENSOR - HEMT-based hydrogen sensors are provided. In accordance with one embodiment, a normalized sensor is provided having a control HEMT-based sensor connected in series to an active HEMT-based sensor. The control and the active sensor include functionalized gate regions. The gate functionalization for both the control and the active sensor is the same material that selectively absorbs hydrogen gas. The control sensor further includes a protective layer to inhibit its gate functionalization from being exposed to hydrogen. In one embodiment, the final metal for the contacts of the sensors is used as the protective layer. In other embodiments, the protective layer is a dielectric or polymer. | 04-21-2011 |
| 20110091510 | NANOROD MATERIALS AND METHODS OF MAKING AND USING SAME - The subject invention concerns nanorods, compositions and substrates comprising nanorods, and methods of making and using nanorods and nanorod compositions and substrates. In one embodiment, the nanorod is composed of Zinc oxide (ZnO). In a further embodiment, a nanorod of the invention further comprises SiO | 04-21-2011 |
| 20110117669 | MATERIALS AND METHODS FOR DETECTING TOXINS, PATHOGENS AND OTHER BIOLOGICAL MATERIALS - Embodiments of the present invention provide binding molecule-functionalized high electron mobility transistors (HEMTs) that can be used to detect toxins, pathogens and other biological materials. In a specific embodiment, an antibody-functionalized HEMT can be used to detect botulinum toxin. The antibody can be anchored to a gold-layered gate area of the HEMT through immobilized thioglycolic acid. Embodiments of the subject detectors can be used in field-deployable electronic biological applications based on AlGaN/GaN HEMTs. | 05-19-2011 |
| 20110137184 | PRESSURE SENSING - A high electron mobility transistor (HEMT) is disclosed capable of performing as a pressure sensor. In one embodiment, the subject pressure sensor can be used for the detection of body fluid pressure. A piezoelectric, biocompatible film can be used to provide a pressure sensing functionalized gate surface for the HEMT. Embodiments of the disclosed sensor can be integrated with a wireless transmitter for constant pressure monitoring. | 06-09-2011 |
