Patent application number | Description | Published |
20110064406 | ASYMMETRICAL INTERLEAVER AND DEINTERLEAVER - Asymmetrical interleavers and deinterleavers. In one example embodiment, an asymmetrical deinterleaver includes first, second, third, fourth, and fifth filter cells interleaved with first, second, third, and fourth waveplates and followed by a fifth waveplate. The filter cells are configured to filter optical signals propagating on first and second legs of an optical loop. The asymmetrical deinterleaver also includes a retro reflector optically coupled with the filter cells and waveplates. The retro reflector is configured to reflect the optical signals between the first leg and the second leg to form the optical loop. The asymmetrical deinterleaver further includes a single-fiber collimator optically coupled to the first leg of the optical loop and a dual-fiber collimator optically coupled to the second leg of the optical loop. | 03-17-2011 |
20110069959 | OPTICAL INTERLEAVER AND DEINTERLEAVER - Optical interleavers and deinterleavers. In one example embodiment, an optical deinterleaver includes first, second, and third filter cells interleaved with first and second waveplates. The filter cells are configured to filter optical signals propagating on first, second, and third paths of an optical loop. The optical deinterleaver also includes a retro reflector optically coupled with the filter cells and waveplates. The retro reflector is configured to reflect the optical signals between the first path and the second and third paths to form the optical loop. The optical deinterleaver further includes first, second, and third single-fiber collimators optically coupled to the first, second, and third paths of the optical loop, respectively. | 03-24-2011 |
20110076023 | MULTICHANNEL TUNABLE OPTICAL DISPERSION COMPENSATOR - An embodiment of the invention includes a tunable optical dispersion compensator (TODC) comprising a first beam displacer on an optical path, wherein the first beam displacer separates an optical signal into a first beam and a second beam, and one or more polarizing beam splitters on the optical path, wherein the one or more polarizing beam splitters keep the first beam and the second beam on the optical path. The TODC also comprises one or more etalons on the optical path, wherein the one or more etalons are tunable to introduce a group delay in the first beam and the second beam, and a reflecting mirror on the optical path, wherein the reflecting mirror returns the optical signal back along the optical path. The TODC further comprises a second beam displacer, wherein the second beam displacer combines the first beam and the second beam into an output optical signal. | 03-31-2011 |
20110156151 | Electrode Pick Up Structure In Shallow Trench Isolation Process - This invention disclosed a kind of electrode pick up structure in shallow trench isolation process. The active region is isolated by shallow trench. A pseudo-buried layer under the bottom of shallow trench is formed. The pseudo-buried layer extends into active region and connects to doping region one which needs to be picked up by an electrode. The pick up is realized by deep trench contacts which etch through STI and get in touch with pseudo buried layer. This invention can reduce the device size, pick up electrode resistance, collector parasitic capacitance, and increase device cut off frequency. | 06-30-2011 |
20110156163 | Structure of electrode pick up in LOCOS - This invention disclosed a kind of electrode picking up structure in LOCOS isolation process. The active region is isolated by local oxide of silicon (LOCOS). A pseudo buried layer under the bottom of LOCOS is formed. The pseudo-buried layer extends into active region and connects to doping region one which needs to be picked up by an electrode. This is achieved by deep trench contacts which etch through LOCOS and get in touch with pseudo buried layer. This invention can reduce the device size, pick up electrode resistance, collector parasitic capacitance, and increase device cut off frequency. | 06-30-2011 |
20110159659 | Novel Manufacturing Approach for Collector and N Type Buried Layer Of Bipolar Transistor - This invention disclosed a novel manufacturing approach of collector and buried layer of a bipolar transistor. One aspect of the invention is that an oxide-nitride-oxide (ONO) sandwich structure is employed instead of oxide-nitride dual layer structure before trench etching. Another aspect is, through the formation of silicon oxide spacer in trench sidewall and silicon oxide remaining in trench bottom in the deposition and etch back process, the new structure hard mask can effectively protect active region from impurity implanted in ion implantation process. | 06-30-2011 |
20110159672 | Novel Manufacturing Approach for Collector and N Type Buried Layer Of Bipolar Transistor - This invention disclosed a manufacturing approach of collector and buried layer of a bipolar transistor. One aspect of the invention is that a pseudo buried layer, i.e, collector buried layer, is manufactured by ion implantation and thermal anneal. This pseudo buried layer has a small area, which makes deep trench isolation to divide pseudo buried layer unnecessary in subsequent process. Another aspect is, the doped area, i.e, collector, is formed by ion implantation instead of high cost epitaxy process. This invention simplified the manufacturing process, as a consequence, saved manufacturing cost. | 06-30-2011 |
20110188867 | DQPSK DEMODULATOR - A phase shift keyed demodulator includes first and second beam splitters, a first optical path, a second optical path, and a wavelength tuner. The first beam splitter splits an input signal into first and second output signals. The second beam splitter splits each first and second output signal into a transmitted signal and a reflected signal. The first optical path includes an optical path of each transmitted signal from a beam splitting surface to a reflector and back to the beam splitting surface. The second optical path includes an optical path of each reflected signal from the beam splitting surface to a mirror surface and back to the beam splitting surface. A path difference introduces a delay between the transmitted signal and the reflected signal. The wavelength tuner tunes the demodulator to a predetermined central wavelength and introduces a phase shift between first and second transmitted signals. | 08-04-2011 |
20110194810 | REINFORCED MULTI-BODY OPTICAL DEVICES - Reinforced multi-body optical devices. In one example embodiment, a method for fabricating a reinforced multi-body optical device includes various acts. First, a supporting plate is bonded, using pressure and heat, to a multi-body optical device to form a reinforced multi-body optical device. The supporting plate has a coefficient of thermal expansion (CTE) that is within about 0.5 parts per million of the CTE of the multi-body optical device. Then, the multi-body optical device is ground to reduce the thickness of the multi-body optical device. | 08-11-2011 |
20120025720 | POWER SUPPLY APPARATUS AND METHOD FOR A BACKLIGHT SYSTEM - A power supply system includes a transformer having a primary winding on its primary side for coupling to a power source and one or more secondary windings on its secondary side. A first control circuit is disposed on the primary side of the transformer for controlling a current flow in the primary winding. A second control circuit disposed on the secondary side of the transformer, and the second control circuit is configured to provide a regulated output voltage. In the power supply system, the first control circuit is configured to generate a control signal for controlling the current flow in the primary winding without using a feedback control signal from the secondary side of the transformer. | 02-02-2012 |
20120064688 | METHOD FOR MANUFACTURING SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR - A manufacturing method of a SiGe HBT is disclosed. Alter an emitter region is formed, an ion implantation is performed with a tilt angle to a base region by using an extrinsic base ion implantation process; boron ions are implanted during the extrinsic base ion implantation with an implantation dose from 1e15 to 1e16 cm | 03-15-2012 |
20120074465 | SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR - A SiGe HBT formed on a silicon substrate is disclosed. An active area is isolated by field oxide regions; a collector region is formed in the active area and extends into the bottom of the field oxide regions; pseudo buried layers are formed at the bottom of the field oxide regions, wherein each pseudo buried layer is separated by a lateral distance from the active area and connected to a lateral extension part of the collector region; first deep hole contacts are formed on top of the pseudo buried layers in the field oxide regions to pick up collector electrodes; a plurality of second deep hole contacts with a floating structure, are formed in the field oxide region on top of a lateral extension part of the collector region, wherein N-type implantation regions are formed at the bottom of the second deep hole contacts. | 03-29-2012 |
20120146188 | PN-JUNCTION VARACTOR IN A BICMOS PROCESS AND MANUFACTURING METHOD OF THE SAME - A PN-junction varactor in a BiCMOS process is disclosed which comprises an N-type region, a P-type region and N-type pseudo buried layers. Both of the N-type and P-type regions are formed in an active area and contact with each other, forming a PN-junction; the P-type region is situated on top of the N-type region. The N-type pseudo buried layers are formed at bottom of shallow trench field oxide regions on both sides of the active area and contact with the N-type region; deep hole contacts are formed on top of the N-type pseudo buried layers in the shallow trench field oxide regions to pick up the N-type region. A manufacturing method of PN-junction varactor in a BiCMOS process is also disclosed. | 06-14-2012 |
20120181579 | VERTICAL PARASITIC PNP DEVICE IN A SILICON-GERMANIUM HBT PROCESS AND MANUFACTURING METHOD OF THE SAME - A vertical parasitic PNP device in a SiGe HBT process is disclosed which comprises a collector region, a base region, an emitter region, P-type pseudo buried layers and N-type polysilicons. The pseudo buried layers are formed at bottom of shallow trench field oxide regions around the collector region and contact with the collector region; deep hole contacts are formed on top of the pseudo buried layers to pick up collector electrodes. The N-type polysilicons are formed on top of the base region and are used to pick up base electrodes. The emitter region comprises a P-type SiGe epitaxial layer and a P-type polysilicon both of which are formed on top of the base region. A manufacturing method of a vertical parasitic PNP device in a SiGe HBT process is also disclosed. | 07-19-2012 |
20120205521 | DUAL-POLARIZATION QPSK DEMODULATOR - In an embodiment, a DP-QPSK demodulator includes first, second and third polarization beam splitters (“PBSs”) and first, second and third half waveplates (“HWPs”). The first HWP is positioned to receive an output of the first PBS. The second PBS is positioned to receive an output of the first HWP. The second HWP is positioned to receive an output of the second PBS. The third PBS is positioned to receive an output of the second HWP. The third HWP is positioned to receive an output of the third PBS. | 08-16-2012 |
20130099288 | SiGe HBT and Manufacturing Method Thereof - A silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is disclosed, in which a shallow trench is formed of a first shallow trench and a second shallow trench vertically joined together in the active region, the second shallow trench being located directly under the first shallow trench and having a width less than that of the first shallow trench; a pseudo buried layer is formed surrounding the bottom and side walls of the second shallow trench and is in contact with the collector region to serve as a connection layer of a collector; a deep hole contact is formed in the shallow trench and is in contact with the pseudo buried layer to pick up the collector. A SiGe HBT manufacturing method is also disclosed. The present invention is capable of improving the cut-off frequency of a SiGe HBT. | 04-25-2013 |
20130099351 | BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A bipolar transistor is disclosed, which includes a collector region, a base region, an emitter region and field plates. Each field plate is present in a structure of a flat sidewall covering one side face of the active region so that it also covers the collector region from one side. The field plate has its surface parallel to the side face of the active region and is isolated from the side face of the active region by a pad oxide layer. The field plate has its top lower than the surface of the active region. The bipolar transistor is capable of improving the breakdown voltage of the device without increasing the collector resistance or deteriorating the frequency characteristic. A method of manufacturing bipolar transistor is also disclosed. | 04-25-2013 |
20130119384 | PARASITIC LATERAL PNP TRANSISTOR AND MANUFACTURING METHOD THEREOF - A parasitic lateral PNP transistor is disclosed, in which, an N-type implanted region formed in each of two adjacent active regions forms a base region; a P-type doped polysilicon pseudo buried layer located under a shallow trench field oxide region between the two active regions serves as an emitter; and a P-type doped polysilicon pseudo buried layer located under each of the shallow trench field oxide regions on the outer side of the active regions serves as a collector region. The transistor has a C-B-E-B-C structure which alters the current path in the base region to a straight line, which can improve the current amplification capacity of the transistor and thus leads to a significant improvement of its current gain and frequency characteristics, and is further capable of reducing the area and increasing current intensity of the transistor. A manufacturing method of the parasitic lateral PNP transistor is also disclosed. | 05-16-2013 |
20130140604 | SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF - A silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is disclosed, including: a substrate; two field oxide regions formed in the substrate; two pseudo buried layers, each being formed under a corresponding one of the field oxide regions; a collector region formed between the field oxide regions, the collector region laterally extending under a corresponding one of the field oxide regions and each side of the collector region being connected with a corresponding one of the pseudo buried layers; a matching layer formed under both the pseudo buried layers and the collector region; and two deep hole electrodes, each being formed in a corresponding one of the field oxide regions, the deep hole electrodes being connected to the corresponding ones of the pseudo buried layers for picking up the collector region. A manufacturing method of the SiGe HBT is also disclosed. | 06-06-2013 |
20130143386 | METHOD OF FILLING SHALLOW TRENCHES - A method of filling shallow trenches is disclosed. The method includes: successively forming a first oxide layer and a second oxide layer over the surface of a silicon substrate where shallow trenches are formed in; etching the second oxide layer to form inner sidewalls with an etchant which has a high etching selectivity ratio of the second oxide layer to the first oxide layer; growing a high-quality pad oxide layer by thermal oxidation after the inner sidewalls are removed; and filling the trenches with an isolation dielectric material. By using this method, the risk of occurrence of junction spiking and electrical leakage during a subsequent process of forming a metal silicide can be reduced. | 06-06-2013 |
20130271822 | ATHERMAL DQPSK AND/OR DPSK DEMODULATOR - In some example embodiments, a demodulator may include an input polarization beam splitter (IPBS), input half waveplate (IHWP), cubical polarization beam splitter (CPBS), first reflector (R | 10-17-2013 |
20130328108 | ULTRA-HIGH VOLTAGE SIGE HBT DEVICE AND MANUFACTURING METHOD OF THE SAME - An ultra-high voltage silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), which includes: a P-type substrate; an N-type matching layer, a P-type matching layer and an N− collector region stacked on the P-type substrate from bottom up; two field oxide regions separately formed in the N− collector region; N+ pseudo buried layers, each under a corresponding one of the field oxide regions and in contact with each of the N-type matching layer, the P-type matching layer and the N− collector region; an N+ collector region between the two field oxide regions and through the N− collector region and the P-type matching layer and extending into the N-type matching layer; and deep hole electrodes, each in a corresponding one of the field oxide regions and in contact with a corresponding one of the N+ pseudo buried layers. A method of fabricating an ultra-high voltage SiGe HBT is also disclosed. | 12-12-2013 |
20140133012 | DP-QPSK DEMODULATOR - In an embodiment, a demodulator includes first, second, third, fourth and fifth beam displacers, a half waveplate, and a quarter waveplate. The second beam displacer is positioned to receive an output from the first beam displacer. The third beam displacer is positioned to receive an output from the second beam displacer. The half waveplate is positioned to receive an output from the third beam displacer. The fourth beam displacer is positioned to receive an output from the half waveplate. The fifth beam displacer is positioned to receive an output from the fourth beam displacer. The quarter waveplate is positioned between the fourth beam displacer and the fifth beam displacer. | 05-15-2014 |
20150083314 | REINFORCED MULTI-BODY OPTICAL DEVICES - Disclosed in one example embodiment is a method for fabricating a reinforced multi-body optical device. One method involves applying a coating to sides of an interior plate and bonding two plates to either side of the interior plate. The bonded plates are diced at an angle that is not orthogonal to the bonded plates. The top and bottom portions of a diced section are removed to form a multi-body polarization beam splitter (PBS) having a generally rectangular perimeter. A supporting plate is bonded to the multi-body PBS to form a reinforced multi-body PBS, wherein the supporting plate has a CTE that is within about 0.5 parts per million of the CTE of the multi-body PBS. The multi-body PBS is grinded to reduce the thickness of the multi-body PBS. | 03-26-2015 |
20150086156 | REINFORCED MULTI-BODY OPTICAL DEVICES - A reinforced multi-body optical device that in one embodiment includes a multi-body optical device having a thickness that is less than or equal to about 1.0 millimeter and a supporting plate bonded without epoxy to the multi-body optical device. In an embodiment the supporting plate has a coefficient of thermal expansion (CTE) that is within about 0.5 parts per million of the CTE of the multi-body optical device. | 03-26-2015 |