Falong
Falong Han, Beijing CN
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20150036913 | METHOD, APPARATUS AND EQUIPMENT OF INSPECTING QUALITY OF LCD - A method, an apparatus and an equipment of inspecting the quality of an LCD are provided, the method includes: obtaining optical parameters of the LCD; capturing images of the LCD; and determining that the LCD is defective after determining that the optical parameters are not in the range of the preset optical parameters and/or the captured images of the LCD are not consistent with the pre-stored images. Through the technical solution of the present invention, it can effectively differentiate the defect types of a product and record the defect position of the product, thereby it can effectively reduce misjudgment or miss test caused by the visual differences between operators to improve the quality and yield of manufactured LCD. | 02-05-2015 |
Falong Jia, Wuhan City CN
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20150360967 | COPPER-CONTAINING NANOCRYSTALS AND METHODS OF PREPARATION THEREFOR - A one-pot approach for preparing ArSH capped Cu | 12-17-2015 |
Falong Li, Shanghai CN
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20110140533 | ASSIGNING ADDRESSES TO MULTIPLE CASCADE BATTERY MODULES IN ELECTRIC OR ELECTRIC HYBRID VEHICLES - According to one aspect there is disclosed an apparatus. The apparatus may include a first battery module. The first battery module may include a switch configured to open or close a first current path from a first terminal of a battery to a second terminal of the battery when a second battery module is coupled to the first battery module; a current sensor configured to sense a current in a second current path, the second current path different from the first current path; and a local controller configured to control a state of the switch to open or close the switch, wherein closing the switch is configured to close the first current path, the local controller is further configured to detect the sensed current in the second current path, and the local controller is further configured to receive and store an identifier based at least in part on the current detected in the second current path. | 06-16-2011 |
20130335036 | BALANCE CHARGING DETECTOR - A balance charging detector is configured to detect a balance charging condition for a battery. The balance charging detector includes a controller and a comparing module. The controller is configured to monitor a status of the battery, access battery parameters for the battery that correspond to the status, and generate a group of balance charging parameters based on the battery parameters. The comparing module is configured to set a balance charging flag based on a comparison of the group of balance charging parameters and a set of thresholds. A balance charging signal can be generated if the balance charging flag is set to indicate presence of a condition to perform a balance charging of the battery. | 12-19-2013 |
20140005855 | DEVICE AND METHOD FOR CALCULATING A REMAINING MILEAGE OF AN ELECTRIC VEHICLE | 01-02-2014 |
Falong Zhou, Dresden DE
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20130175585 | Methods of Forming Faceted Stress-Inducing Stressors Proximate the Gate Structure of a Transistor - Disclosed herein are various methods of forming faceted stress-inducing stressors proximate the gate structure of a transistor. In one example, a method includes forming a first recess in an active region of a semiconducting substrate, forming a first semiconductor material in the first recess and forming a gate structure above the first semiconductor material. In this example, the method includes the additional steps of performing a crystalline orientation-dependent etching process on the first semiconductor material to define a plurality of second recesses proximate the gate structure, wherein each of the second recesses has a faceted edge, and forming a first region of stress-inducing semiconductor material in each of the second recesses, wherein each of the first regions of stress-inducing semiconductor material has a faceted edge that engages a corresponding faceted edge in one of the second recesses. | 07-11-2013 |
20130178045 | Method of Forming Transistor with Increased Gate Width - Methods of forming transistor devices having an increased gate width dimension are disclosed. In one example, the method includes forming an isolation structure in a semiconducting substrate, wherein the isolation structure defines an active region in the substrate, performing an ion implantation process on the isolation structure to create a damaged region in the isolation structure and, after performing the implantation process, performing an etching process to remove at least a portion of the damaged region to define a recess in the isolation structure, wherein a portion of the recess extends below an upper surface of the substrate and exposes a sidewall of the active region. The method further includes forming a gate insulation layer above the active region, wherein a portion of the insulation layer extends into the recess, and forming a gate electrode above the insulation layer, wherein a portion of the gate electrode extends into the recess. | 07-11-2013 |