| Patent application number | Description | Published |
|---|
| 20090184317 | ARRAY OF MUTUALLY INSULATED GEIGER-MODE AVALANCHE PHOTODIODES, AND CORRESPONDING MANUFACTURING PROCESS - An embodiment of an array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type, housing a first cathode region, of the second conductivity type, and facing a surface of the body, an anode region, having the first conductivity type and a higher doping level than the body, extending inside the body, and facing the surface laterally to the first cathode region and at a distance therefrom, and an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the first cathode region and the anode region. The insulation region is formed by a mirror region of metal material, a channel-stopper region having the second conductivity type, surrounding the mirror region, and a coating region, of dielectric material, arranged between the mirror region and the channel-stopper region. | 07-23-2009 |
| 20090184384 | ARRAY OF MUTUALLY ISOLATED, GEIGER-MODE, AVALANCHE PHOTODIODES AND MANUFACTURING METHOD THEREOF - An embodiment of array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type and housing an anode region, of a second conductivity type, facing a top surface of the body, a cathode-contact region, having the first conductivity type and a higher doping level than the body, facing a bottom surface of the body, an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the anode region and the cathode-contact region. The insulation region is formed by a first mirror region of polycrystalline silicon, a second mirror region of metal material, and a channel-stopper region of dielectric material, surrounding the first and second mirror regions. | 07-23-2009 |
| 20100140489 | RADIATION DETECTOR OF THE DELTA E-E TYPE WITH INSULATION TRENCHES - A radiation detector of the ΔE-E type is proposed. The detector is integrated in a chip of semiconductor material with a front surface and a back surface opposite the front surface, the detector having at least one detection cell arranged on the front surface for receiving a radiation to be evaluated, wherein the detector includes: a first region of a first type of conductivity extending into the chip from the front surface to a first depth; a second region of a second type of conductivity extending into the chip from the back surface to a second depth so as to reach the first region; and for each detection cell a third region of the second type of conductivity extending into the first region from the front surface to a third depth lower than the first depth and the second depth, a thin sensitive volume for absorbing energy from the radiation being defined by a junction between the first region and each third region, and a thick sensitive volume for absorbing further energy from the radiation being defined by a further junction between the first region and the second region. For each detection cell the detector further includes insulation means arranged around the third region and extending from the front surface into the first region to an insulation depth comprised between the first depth and the third depth. | 06-10-2010 |
| 20100148079 | RADIATION DETECTOR OF THE DELTA E-E TYPE WITH INSULATION TRENCHES - A radiation detector of the ΔE-E type is proposed. The detector is integrated in a chip of semiconductor material with a front surface and a back surface opposite the front surface, the detector having at least one detection cell arranged on the front surface for receiving a radiation to be evaluated, wherein the detector includes: a first region of a first type of conductivity extending into the chip from the front surface to a first depth; a second region of a second type of conductivity extending into the chip from the back surface to a second depth so as to reach the first region; and for each detection cell a third region of the second type of conductivity extending into the first region from the front surface to a third depth lower than the first depth and the second depth, a thin sensitive volume for absorbing energy from the radiation being defined by a junction between the first region and each third region, and a thick sensitive volume for absorbing further energy from the radiation being defined by a further junction between the first region and the second region. For each detection cell the detector further includes insulation means arranged around the third region and extending from the front surface into the first region to an insulation depth comprised between the first depth and the third depth. | 06-17-2010 |
| 20100271108 | GEIGER-MODE PHOTODIODE WITH INTEGRATED AND JFET-EFFECT-ADJUSTABLE QUENCHING RESISTOR, PHOTODIODE ARRAY, AND CORRESPONDING MANUFACTURING METHOD - An embodiment of a Geiger-mode avalanche photodiode, having: a body made of semiconductor material of a first type of conductivity, provided with a first surface and a second surface and forming a cathode region; and an anode region of a second type of conductivity, extending inside the body on top of the cathode region and facing the first surface. The photodiode moreover has: a buried region of the second type of conductivity, extending inside the body and surrounding an internal region of the body, which extends underneath the anode region and includes the internal region and defines a vertical quenching resistor; a sinker region extending through the body starting from the first surface and in direct contact with the buried region; and a contact region made of conductive material, overlying the first surface and in direct contact with the sinker region. | 10-28-2010 |
| 20120009722 | ARRAY OF MUTUALLY INSULATED GEIGER-MODE AVALANCHE PHOTODIODES, AND CORRESPONDING MANUFACTURING PROCESS - An embodiment of an array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type, housing a first cathode region, of the second conductivity type, and facing a surface of the body, an anode region, having the first conductivity type and a higher doping level than the body, extending inside the body, and facing the surface laterally to the first cathode region and at a distance therefrom, and an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the first cathode region and the anode region. The insulation region is formed by a mirror region of metal material, a channel-stopper region having the second conductivity type, surrounding the mirror region, and a coating region, of dielectric material, arranged between the mirror region and the channel-stopper region. | 01-12-2012 |
