| Patent application number | Description | Published |
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| 20080266000 | Digital Frequency Multiplier Circuit - A digital frequency multiplier circuit is disclosed. The digital frequency multiplier circuit includes a digitally controlled oscillator (DCO), a phase detector and a control circuit. The DCO generates an internal feedback signal. The phase detector detects a phase difference between the internal feedback signal and an external reference clock signal. Coupled between the phase detector and the DCO, the control circuit adjusts the DCO to align the internal feedback signal with the external reference clock signal after a phase difference between the internal feedback signal and the external reference clock signal has been detected. The control circuit also locks a modulation frequency of the DCO and monitors the state of the digital frequency multiplier circuit in order to maintain the lock. | 10-30-2008 |
| 20080284461 | ACTIVE CANCELLATION MATRIX FOR PROCESS PARAMETER MEASUREMENTS - An active cancellation matrix for process parameter measurements provides feedback paths for each test location wherein each feedback path is used to sense the applied voltage and the sensed voltage is used to adjust the source voltage for any variations along the input path. The devices under test are arranged in a row and column array, and the feedback and voltage input paths are formed along respective rails which extend generally parallel to a row of devices under test. Selectors are used to selectively route the outputs of the test nodes to a measurement unit such as a current sensor. The input voltages can be varied to establish current-voltage (I-V) curves for the devices under various conditions. In the example where the devices under test are transistors, each source input includes three voltage inputs (rails) for a drain voltage, a source voltage, and a gate voltage. | 11-20-2008 |
| 20080288196 | Correction of Delay-Based Metric Measurements Using Delay Circuits Having Differing Metric Sensitivities - Correction of delay-based metric measurements using delay circuits having differing metric sensitivities provides improved accuracy for environmental and other circuit metric measurements that used delay lines. A delay line measurement, which may be a one-shot measurement or a ring oscillator frequency measurement is performed either simultaneously or sequentially using at least two delay lines that have differing sensitivities to a particular metric under measurement. A correction circuit or algorithm uses the measured delays or ring oscillator frequencies and corrects at least one of the metric measurements determined from one of the delays or ring oscillator frequencies in conformity with the other delay or ring oscillator frequency. The delays may be inverter chains, with one chain having a higher sensitivity to supply voltage than the other delay chain, with the other delay chain having a higher sensitivity to temperature. Temperature results can then be corrected for supply voltage variation and vice-versa. | 11-20-2008 |
| 20080288197 | Calibration of Multi-Metric Sensitive Delay Measurement Circuits - A method and system for calibration of multi-metric sensitive delay measurement circuits provides for reduction of process-dependent variation in delays and their sensitivities to circuit metrics. A process corner for the delay circuit(s) is determined from at least one delay measurement for which the variation of delay due to process variation is previously characterized. The delay measurement(s) is made at a known temperature(s), power supply voltage(s) and known values of any other environmental metric which the delay circuit is designed to measure. Coefficients for delay versus circuit metrics are then determined from the established process corner, so that computation of circuit metric values from the delay measurements have improved accuracy and reduced variation due to the circuit-to-circuit and/or die-to-die process variation of the delay circuits. | 11-20-2008 |
| 20090108888 | Switched-Capacitor Charge Pumps - A switched-capacitor charge pump comprises a two-phase charging circuit, cross-coupled transistors connected to output nodes of the switched capacitors, and a pump output connected to source terminals of the cross-coupled transistors. The charge pump has side transistors for boosting charge transfer, and gating logic of the side transistors includes level shifters which control connections to the pump output or a reference voltage. Negative and positive charge pump embodiments are provided. The charging circuit advantageously utilizes non-overlapping wide and narrow clock signals to generate multiple gating signals. The pump clock circuit preferably provides independent, programmable adjustment of the widths of the wide and narrow clock signals. An override mode can be provided using clamping circuits which shunt the pump output to the second nodes of the switched capacitors. | 04-30-2009 |
| 20090116312 | Storage Array Including a Local Clock Buffer with Programmable Timing - A storage array including a local clock buffer with programmable timing provides a mechanism for evaluating circuit timing internal to the storage array. The local clock buffer can independently adjust the pulse width of a local clock that controls the wordline and local bitline precharge pulses and the pulse width of a delayed clock that controls the global bitline precharge, evaulate and read data latching. The delay between the local clock and the delayed clock can also be adjusted. By varying the pulse widths of the local and delayed clock signal, along with the inter-clock delay, the timing margins of each cell in the array can be evaluated by reading and writing the cell with varying pulse width and clock delay. The resulting evaluation can be used to evaluate timing margin variation within a die, as well variation from die-to-die and under varying environments, e.g., voltage and temperature variation. | 05-07-2009 |
| 20090144006 | CALIBRATION OF MULTI-METRIC SENSITIVE DELAY MEASUREMENT CIRCUITS - A method and system for calibration of multi-metric sensitive delay measurement circuits provides for reduction of process-dependent variation in delays and their sensitivities to circuit metrics. A process corner for the delay circuit(s) is determined from at least one delay measurement for which the variation of delay due to process variation is previously characterized. The delay measurement(s) is made at a known temperature(s), power supply voltage(s) and known values of any other environmental metric which the delay circuit is designed to measure. Coefficients for delay versus circuit metrics are then determined from the established process corner, so that computation of circuit metric values from the delay measurements have improved accuracy and reduced variation due to the circuit-to-circuit and/or die-to-die process variation of the delay circuits. | 06-04-2009 |
| 20090153196 | VOLTAGE COMPARATOR HAVING IMPROVED KICKBACK AND JITTER CHARACTERISTICS - A comparator apparatus for comparing a first and a second voltage input includes a pair of cross-coupled inverter devices, including a pull up device and a pull down device, with output nodes defined between the pull up and pull down devices. A first switching device is coupled to the first input and a second switching device is coupled to the second input, with control circuitry configured for selective switching between a reset mode and a compare mode. In the reset mode, the first and second voltage inputs are coupled to respective output nodes so as to develop a differential signal thereacross, and the pull down devices in each inverter are isolated from the pull up devices. In the compare mode, the voltage inputs are isolated from the output nodes, and the pull down devices in each inverter are coupled to the pull up devices to latch the output nodes. | 06-18-2009 |
| 20090174441 | Peak Power Reduction Methods in Distributed Charge Pump Systems - A distributed charge pump system uses a delay element and frequency dividers to generate out of phase pump clock signals that drive different charge pumps, to offset peak current clock edges for each charge pump and thereby reduce overall peak power. Clock signal division and phase offset may be extended to multiple levels for further smoothing of the pump clock signal transitions. A dual frequency divider may be used which receives the clock signal and its complement, and generates two divided signals that are 90° out of phase. In an illustrative embodiment the clock generator comprises a variable-frequency clock source, and a voltage regulator senses an output voltage of the charge pumps, generates a reference voltage based on a currently selected frequency of the variable-frequency clock source, and temporarily disables the charge pumps (by turning off local pump clocks) when the output voltage is greater than the reference voltage. | 07-09-2009 |
| 20090302354 | High Density Stable Static Random Access Memory - A memory circuit includes a plurality of bit line structures, a plurality of word line structures intersecting the plurality of bit line structures to form a plurality of cell locations; and a plurality of cells located at the plurality of cell locations. Each of the cells is selectively coupled to a corresponding one of the bit line structures under control of a corresponding one of the word line structures, and each of the cells in turn includes a logical storage element having at least a first n-type field effect transistor and at least a first p-type field effect transistor. The at least first n-type field effect transistor is formed with a relatively thick buried oxide layer sized to reduce capacitance of the bit line structures, and the at least first p-type field effect transistor is formed with a relatively thin buried oxide layer | 12-10-2009 |
| 20090319202 | Delay-Based Bias Temperature Instability Recovery Measurements for Characterizing Stress Degradation and Recovery - A method, test circuit and test system provide measurements to accurately characterize threshold voltage changes due to negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI). Both the bias temperature instability recovery profile and/or the bias temperature shifts due to rapid repetitions of stress application can be studied. In order to provide accurate measurements when stresses are applied at intervals on the order of tens of nanoseconds while avoiding unwanted recovery, and/or to achieve recovery profile sampling resolutions in the nanosecond range, multiple delay or ring oscillator frequency measurements are made using a delay line that is formed from delay elements that have delay variation substantially caused only by NBTI or PBTI effects. Devices in the delay elements are stressed, and then the delay line/ring oscillator is operated to measure a threshold voltage change for one or more measurement periods on the order of nanoseconds. | 12-24-2009 |
| 20090326840 | Temperature-Profiled Device Fingerprint Generation and Authentication from Power-Up States of Static Cells - A method, system and computer program product for generating device fingerprints and authenticating devices uses initial states of internal storage cells after each of a number multiple power cycles for each of a number of device temperatures to generate a device fingerprint. The device fingerprint may include pairs of expected values for each of the internal storage cells and a corresponding probability that the storage cell will assume the expected value. Storage cells that have expected values varying over the multiple temperatures may be excluded from the fingerprint. A device is authenticated by a similarity algorithm that uses a match of the expected values from a known fingerprint with power-up values from an unknown device, weighting the comparisons by the probability for each cell to compute a similarity measure. | 12-31-2009 |
| 20100001788 | SYSTEM TO EVALUATE CHARGE PUMP OUTPUTS AND ASSOCIATED METHODS - A system to evaluate charge pump output may include a comparator to compare a charge pump output voltage to a reference voltage to generate a comparison result. The system may also include a divider to divide down a clock signal. The system may further include a logical conjunction unit to operate on the comparison result and the divided down clock signal. | 01-07-2010 |
| 20100030503 | SYSTEM AND CIRCUIT FOR DETERMINING DATA SIGNAL JITTER VIA ASYNCHRONOUS SAMPLING - A system and circuit for determining data signal jitter via asynchronous sampling provides a low cost and production-integrable mechanism for measuring data signal jitter. The data signal is edge-detected and sampled by a sampling clock of unrelated frequency the sampled values are collected in a histogram according to a folding of the samples around a timebase. The timebase is determined by sweeping to detect a minimum jitter for the folded data. The histogram for the correct estimated timebase period is representative of the probability density function of the location of data signal edges and the jitter characteristics are determined by the width and shape of the density function peaks. Frequency drift can be corrected by adjusting the timebase used to fold the data across the sample set. | 02-04-2010 |
| 20100102854 | CIRCULAR EDGE DETECTOR - A circular edge detector on an integrated circuit including a plurality of edge detector cells, each of the plurality of edge detector cells having an input select block operable to receive a data signal and a previous cell signal and to generate a present cell signal, and a state capture block operably connected to receive the present cell signal. The present cell signal of each of the plurality of edge detector cells is provided to a next of the plurality of edge detector cells as the previous cell signal for the next of the plurality of edge detector cells, and the present cell signal from a last edge detector cell is provided to a first edge detector cell as the previous cell signal for the first edge detector cell. | 04-29-2010 |
| 20100122012 | SYSTOLIC NETWORKS FOR A SPIRAL CACHE - Systolic networks within a tiled storage array provide for movement of requested values to a front-most tile, while making space for the requested values at the front-most tile by moving other values away. A first and second information pathway provide different linear pathways through the tiles. The movement of other values, requests for values and responses to requests is controlled according to a clocking logic that governs the movement on the first and second information pathways according to a systolic duty cycle. The first information pathway may be a move-to-front network of a spiral cache, crossing the spiral push-back network which forms the push-back network. The systolic duty cycle may be a three-phase duty cycle, or a two-phase duty cycle may be provided if the storage tiles support a push-back swap operation. | 05-13-2010 |
| 20100122033 | MEMORY SYSTEM INCLUDING A SPIRAL CACHE - An integrated memory system with a spiral cache responds to requests for values at a first external interface coupled to a particular storage location in the cache in a time period determined by the proximity of the requested values to the particular storage location. The cache supports multiple outstanding in-flight requests directed to the same address using an issue table that tracks multiple outstanding requests and control logic that applies the multiple requests to the same address in the order received by the cache memory. The cache also includes a backing store request table that tracks push-back write operations issued from the cache memory when the cache memory is full and a new value is provided from the external interface, and the control logic to prevent multiple copies of the same value from being loaded into the cache or a copy being loaded before a pending push-back has been completed. | 05-13-2010 |
| 20100220541 | SWITCHED-CAPACITOR CHARGE PUMPS - A switched-capacitor charge pump comprises a two-phase charging circuit, cross-coupled transistors connected to output nodes of the switched capacitors, and a pump output connected to source terminals of the cross-coupled transistors. The charge pump has side transistors for boosting charge transfer, and gating logic of the side transistors includes level shifters which control connections to the pump output or a reference voltage. Negative and positive charge pump embodiments are provided. The charging circuit advantageously utilizes non-overlapping wide and narrow clock signals to generate multiple gating signals. The pump clock circuit preferably provides independent, programmable adjustment of the widths of the wide and narrow clock signals. An override mode can be provided using clamping circuits which shunt the pump output to the second nodes of the switched capacitors. | 09-02-2010 |
| 20100271057 | Method for Qcrit Measurement in Bulk CMOS Using a Switched Capacitor Circuit - A test setup for estimating the critical charge of a circuit under test (CUT) uses a charge injection circuit having a switched capacitor that is selectively connected to a node of the CUT. A voltage measurement circuit measures the voltage at a tap in the charge injection circuit before and after the charge is injected. When the injected charge causes an upset in the logical state of the CUT, the critical charge is calculated as the product of the voltage difference and the known capacitance of the capacitor. In one embodiment, (NMOS drain strike simulation) the amount of charge injected is controlled by a variable pulse width generator gating the switch of the charge injection circuit. In another embodiment (PMOS drain strike simulation) the amount of charge injected is controlled by a variable voltage supply selectively connected to the charge storage node. | 10-28-2010 |
| 20100315132 | PEAK POWER REDUCTION METHODS IN DISTRIBUTED CHARGE PUMP SYSTEMS - A distributed charge pump system uses a delay element and frequency dividers to generate out of phase pump clock signals that drive different charge pumps, to offset peak current clock edges for each charge pump and thereby reduce overall peak power. Clock signal division and phase offset may be extended to multiple levels for further smoothing of the pump clock signal transitions. A dual frequency divider may be used which receives the clock signal and its complement, and generates two divided signals that are 90° out of phase. In an illustrative embodiment the clock generator comprises a variable-frequency clock source, and a voltage regulator senses an output voltage of the charge pumps, generates a reference voltage based on a currently selected frequency of the variable-frequency clock source, and temporarily disables the charge pumps (by turning off local pump clocks) when the output voltage is greater than the reference voltage. | 12-16-2010 |
| 20110074394 | TEST CIRCUIT FOR BIAS TEMPERATURE INSTABILITY RECOVERY MEASUREMENTS - A method, test circuit and test system provide measurements to accurately characterize threshold voltage changes due to negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI). Both the bias temperature instability recovery profile and/or the bias temperature shifts due to rapid repetitions of stress application can be studied. In order to provide accurate measurements when stresses are applied at intervals on the order of tens of nanoseconds while avoiding unwanted recovery, and/or to achieve recovery profile sampling resolutions in the nanosecond range, multiple delay or ring oscillator frequency measurements are made using a delay line that is formed from delay elements that have delay variation substantially caused only by NBTI or PBTI effects. Devices in the delay elements are stressed, and then the delay line/ring oscillator is operated to measure a threshold voltage change for one or more measurement periods on the order of nanoseconds. | 03-31-2011 |
| 20110115004 | EMBEDDED PHOTODETECTOR APPARATUS IN A 3D CMOS CHIP STACK - An embedded photodetector apparatus for a three-dimensional complementary metal oxide semiconductor (CMOS) stacked chip assembly having a CMOS chip and one or more thinned CMOS layers is provided. At least one of the one or more thinned CMOS layers includes an active photodiode area defined within the one or more thinned CMOS layers, the active photodiode area being receptive of an optical signal incident thereon, and the active photodiode area comprising a bulk substrate portion of the thinned CMOS layer. The bulk substrate portion has a diode photodetector formed therein. | 05-19-2011 |
