Patent application number | Description | Published |
20090087985 | Selective formation of a compound comprising a semi-conducting material and a metallic material in a substrate through a germanium oxide layer - An area made from a compound of a metallic material and semi-conducting material is produced selectively in a substrate made from semi-conducting material by previously forming a germanium oxide layer with a thickness comprised between 3 nm and 5 nm over a predefined part of a surface of the substrate and a silicon oxide layer on the rest of the surface. A metallic layer is deposited on the oxide layers. The metallic material is chosen such that its oxide is thermodynamically more stable than germanium oxide and thermodynamically less stable than silicon oxide. Thermal annealing is then performed to obtain reduction of the germanium oxide by said metallic material followed by formation of the compound, at the level of said part of the surface of the substrate. The metallic layer is then removed. | 04-02-2009 |
20100117238 | METHOD FOR PREPARING A LAYER COMPRISING NICKEL MONOSILICIDE NISI ON A SUBSTRATE COMPRISING SILICON - The invention relates to a method for fabricating a layer comprising nickel monosilicide NiSi on a substrate comprising silicon successively comprising the following steps:
| 05-13-2010 |
20110143534 | METHOD FOR FORMING METALLIC MATERIALS COMPRISING SEMI-CONDUCTORS - The method for forming first and second metal-based materials comprises providing a substrate comprising an area made from a first semi-conductor material and an area made from a second semi-conductor material comprising germanium separated by a pattern made from dielectric material, depositing a metal layer and performing a first heat treatment in an atmosphere comprising a quantity of oxygen comprised between 0.01% and 5%. The metal layer reacts with the first semi-conductor material and the second semi-conductor material comprising germanium to respectively form the first metal-based material and the second metal-based material containing germanium. | 06-16-2011 |
20110221015 | METHOD FOR PRODUCING AN ELECTRO-MECHANICAL MICROSYSTEM - A production method with release of movable mechanical parts of an electro-mechanical microsystem is disclosed. The method is characterized in that porous zones are formed on the front face of a first water of a semiconductor material. Patterns of a material able to constitute the movable mechanical parts of the electro-mechanical microsystem are then formed on the front face of the first water at the level of the porous zones and encapsulated in a sacrificial layer. Then a layer of a material withstanding an attack by a solvent of the sacrificial layer is deposited. The release of the movable mechanical parts is then executed by the rear face of the first water, through the porous zones, using a solvent of the sacrificial layer. | 09-15-2011 |
20110244601 | METHOD FOR PRODUCING A SUBSTRATE INCLUDING A STEP OF THINNING WITH STOP WHEN A POROUS ZONE IS DETECTED - A method for producing a substrate including a step of thinning the thickness of the substrate is disclosed. The method is characterized in that it includes the following steps: the formation of a porous zone in an inner layer of the substrate; the progressive thinning of the thickness of the substrate towards the inner layer including a porous zone; the completion of the progressive thinning by polishing; and a controlled stoppage of polishing upon detection of the porous zone. | 10-06-2011 |
20120115311 | METHOD FOR FORMING A MULTILAYER STRUCTURE - The method for forming a multilayer structure on a substrate comprises providing a stack successively comprising an electron hole blocking layer, a first layer made from N-doped semiconductor material having a dopant concentration greater than or equal to 10 | 05-10-2012 |
20130214362 | METHOD OF PRODUCING A DEVICE WITH TRANSISTORS STRAINED BY MEANS OF AN EXTERNAL LAYER - A method of producing a microelectronic device with transistors wherein a strain layer is formed on a series of transistors and the strain exerted on at least one given transistor of said series is released by removing a sacrificial layer situated between said given transistor and said strain layer. | 08-22-2013 |
20130214363 | MANUFACTURING METHOD FOR A DEVICE WITH TRANSISTORS STRAINED BY SILICIDATION OF SOURCE AND DRAIN ZONES - A method for making a microelectronic device with transistors, in which silicided source and drain zones are formed to apply a compressive strain on the channel, in some transistors. | 08-22-2013 |
20130273722 | CONTACT ON A HETEROGENEOUS SEMICONDUCTOR SUBSTRATE - A method for producing a microelectronic device with plural zones made of a metal and semiconductor compound, from semiconductor zones made of different semiconductor materials, and on which a thin semiconductor layer is formed prior to the deposition of a metal layer so as to lower the nucleation barrier of the semiconductor zones when reacting with the metal layer. | 10-17-2013 |
20130295734 | METHOD FOR FORMING GATE, SOURCE, AND DRAIN CONTACTS ON A MOS TRANSISTOR - A method for forming gate, source, and drain contacts on a MOS transistor having an insulated gate including polysilicon covered with a metal gate silicide, this gate being surrounded with at least one spacer made of a first insulating material, the method including the steps of a) covering the structure with a second insulating material and leveling the second insulating material to reach the gate silicide; b) oxidizing the gate so that the gate silicide buries and covers the a silicon oxide; c) selectively removing the second insulating material; and d) covering the structure with a first conductive material and leveling the first conductive material all the way to a lower level at the top of the spacer. | 11-07-2013 |