| Patent application number | Description | Published |
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| 20080272494 | Semiconductor device - A semiconductor device is provided, including: a first barrier metal film provided by a PVD process in a recess formed in at least one insulating film, and containing at least one metal element belonging to any of the groups 4-A, 5-A, and 6-A; a second barrier metal film continuously provided by at least one of CVD and ALD processes on the first barrier metal film without being opened to atmosphere, and containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A; a third barrier metal film continuously provided by the PVD process on the second barrier metal film without being opened to the atmosphere, and containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A; and a first Cu film continuously provided on the third barrier metal film without being opened to the atmosphere and thereafter heated. | 11-06-2008 |
| 20090134516 | Method of manufacturing semiconductor device and semiconductor device - According to an embodiment of the present invention, a method of manufacturing a semiconductor device, comprising forming a conducting layer on a substrate; forming a resist mask having an opening in a prescribed position on the conducting layer; forming a first plated film in the opening by supplying an electric current to the conducting layer; increasing the interval between an inner side surface of the resist mask forming the opening and the first plated film by setting back the inner side surface; and forming a second plated film in the opening resulting from the setback of the inner side surface to cover the first plated film by supplying an electric current to the conducting layer. | 05-28-2009 |
| 20090200664 | MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS - A first conducting layer is formed on a side of a main surface on which an electrode terminal of a semiconductor device is provided in a semiconductor substrate. The first conducting layer is electrically connected to the electrode terminal of the semiconductor device. A mask layer that has an opening at a predetermined position is formed on the first conducting layer. A second conducting layer is formed inside the opening of the mask layer. The mask layer is removed. A relocation wiring that includes the first conducting layer and electrically draws out the electrode terminal is formed by performing anisotropic etching for the first conducting layer using the second conducting layer as a mask. Finally, a bump is formed on the relocation wiring by causing the second conducting layer to reflow. | 08-13-2009 |
| 20100003816 | Method of manufacturing a semiconductor device from which damage layers and native oxide films in connection holes have been removed - An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting layer to dry-clean a damage layer produced in the connection hole. A product produced in the connection hole as a result of the dry cleaning is removed by a wet process. An oxide film formed in the connection hole as a result of the wet process is etched by a chemical dry process using a gas including either NF | 01-07-2010 |
| 20100301472 | ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREOF - An electronic component in which an element is formed on a chip includes: a pad that is made of a conductive material and that is formed in a first bump formation region that is two-dimensionally arranged in center of one principle face and in a second bump formation region that is linearly arranged at peripheral border of the principle face; a passivation film that is formed on the principle face to cover portion except a formation position of the pad; a metal layer that is formed on the pad; and a bump that is made of a conductive material and that is formed on the metal layer by plating, wherein radius of the metal layer in the second bump formation region is smaller than radius of at least some of the metal layer in the first bump formation region. | 12-02-2010 |
| 20110024901 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - According to one embodiment, a manufacturing method of a semiconductor device attained as follows. A dielectric layer having a first opening and a second opening reaching an electrode terminal is formed by modifying a photosensitive resin film on a substrate on which the electrode terminal of a first conductive layer is provided. Next, a second conductive layer that is electrically connected to the electrode terminal is formed on the dielectric layer that includes inside of the first opening, and a third conductive layer that has an oxidation-reduction potential of which difference from the oxidation-reduction potential of the first conductive layer is smaller than a difference of the oxidation-reduction potential between the first conductive layer and the second conductive layer is formed on the second conductive layer. Next, a dielectric layer having a third opening reaching the third conductive layer and a fourth opening reaching the electrode terminal via the second opening is formed by modifying a photosensitive resin film, and a bump that is electrically connected to the third conductive layer is formed. | 02-03-2011 |
| 20110049707 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes an electrode pad, a protective layer, a bump, and a resin layer. The electrode pad is formed on a semiconductor substrate. The protective layer includes a pad opening formed in the position of the electrode pad. The bump is formed in the pad opening and electrically connected to the electrode pad. The resin layer has a space provided between the resin layer and the bump and is formed on the protective layer via a metal layer. The resin layer is formed by using an adhesive resin material. | 03-03-2011 |
| 20120028463 | MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS - A first conducting layer is formed on a side of a main surface on which an electrode terminal of a semiconductor device is provided in a semiconductor substrate. The first conducting layer is electrically connected to the electrode terminal of the semiconductor device. A mask layer that has an opening at a predetermined position is formed on the first conducting layer. A second conducting layer is formed inside the opening of the mask layer. The mask layer is removed. A relocation wiring that includes the first conducting layer and electrically draws out the electrode terminal is formed by performing anisotropic etching for the first conducting layer using the second conducting layer as a mask. Finally, a bump is formed on the relocation wiring by causing the second conducting layer to reflow. | 02-02-2012 |
| 20120056320 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor substrate, a metal film, a surface modifying layer, and a redistribution trace are provided. On the semiconductor substrate, a wire and a pad electrode are formed. The metal film is formed over the semiconductor substrate. The surface modifying layer is formed on a surface layer of the metal film and improves the adhesion with a resist pattern. The redistribution trace is formed on the metal film via the surface modifying layer. | 03-08-2012 |
| 20120068334 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Semiconductor devices of embodiments include a plurality of solder bumps electrically connected on a plurality of electrode pads disposed on a semiconductor substrate in parallel at a pitch of 40 μm or less via under bump metals. The ratio of the diameter (the top diameter) of the portion of each solder bump most away from the semiconductor substrate and the diameter (the bottom diameter) of the bottom side of each solder bump is 1:1 to 1:4. | 03-22-2012 |
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| 20100243031 | SOLAR LIGHT TRACKING SENSOR DIRECTION SETTING/MEASURING/RE-ADJUSTING METHOD AND SOLAR LIGHT COLLECTING DEVICE - The direction of a solar light tracking sensor is set easily with high accuracy. A solar light tracking guide ( | 09-30-2010 |
| 20100246039 | BEAM-DOWN TYPE SOLAR RAY LIGHTING DEVICE - An object is to provide a solar ray lighting device which is capable of reducing the blocking and the shadowing of beams of light reflected by heliostats and which is capable of fixing firmly and stably a heavy and large-sized center reflector. In a beam-down type solar ray lighting device, at least three supporting blocks are assembled together to form a pyramidal shape. In addition, an outer circumferential edge of the center reflector is fixed to the supporting posts so that the outer circumferential edge of the center reflector can internally touch the supporting posts. | 09-30-2010 |
| 20100319678 | HYBRID SOLAR HEAT POWER GENERATION DEVICE - Lower heat-collection efficiency and a much smaller amount of solar heat may result from the providing of only a single receiver on a supporting post to collect lights coming from both heliostats located at nearby positions and heliostats located at faraway positions. A solar heat power generation device to be provided by the invention can avoid such problems. The solar heat power generation device has the following characteristic features. The solar heat power generation device comprises: a supporting post | 12-23-2010 |
| 20110146663 | METHOD FOR CONTROLLING HELIOSTAT USED FOR CONDENSING OF SUNLIGHT AND DEVICE THEREOF - Provided are a method for controlling a heliostat used for collecting of sunlight and a device of the method that achieve: a high sunlight collecting efficiency with a high light collecting rate by allowing no deviation of a light collecting point (a focal point) of sunlight; and a high area arrangement efficiency by having such a configuration in which no rotation by means of a rotation mechanism is carried out. The method is a method for controlling a heliostat being used for collecting of sunlight and having multiple reflecting mirrors in a way that the heliostat tracks the sun in motion, reflects sunlight, and collects the sunlight at a predetermined focal point. The method includes: a step of adjusting the multiple reflecting mirrors so that the multiple reflecting mirrors have a focal point at a predetermined distance; and a step of controlling the multiple reflecting mirrors to track the sun while light beams reflected from the reflecting mirrors have a focal point at an arbitrary point, the multiple reflecting mirrors being configured to tilt in conjunction with each other. In the method, while maintaining a state where the coordinates of predetermined points of the respective reflecting mirrors are fixed, the reflecting mirrors are operated in conjunction with each other. | 06-23-2011 |
| 20110197584 | BEAM DOWN SYSTEM SOLAR GENERATION DEVICE - Provided is a device for supporting a center reflector stably and firmly. The device improves the setting density of heliostats and is capable of reducing the blocking and the shadowing of the beams of light reflected by the heliostats. In a beam down system solar generation device, the center reflector is attached, in a cantilever manner, to a supporting post standing upright. A pylon is provided to stand on the top of the supporting post. A stay member is attached to the pylon and is used for fixing the center reflector. A second stay member is provided to support the supporting post. This second stay member connects: the pylon; a jut extending out from the back side of the supporting post; and a base. | 08-18-2011 |
| 20110235202 | MOUNTING POSITION MEASURING DEVICE - For work in which reflecting mirrors (or facets ( | 09-29-2011 |
