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Eyal Gurgi

Eyal Gurgi, Petah-Tikva IL

Patent application numberDescriptionPublished
20080198650Distortion Estimation And Cancellation In Memory Devices - A method for operating a memory (08-21-2008
20080282106DATA STORAGE WITH INCREMENTAL REDUNDANCY - A method for operating a memory includes encoding input data with an Error Correction Code (ECC) to produce input encoded data including first and second sections, such that the ECC is decodable based on the first section at a first redundancy, and based on both the first and the second sections at a second redundancy that is higher than the first redundancy.11-13-2008
20090157964EFFICIENT DATA STORAGE IN MULTI-PLANE MEMORY DEVICES - A method for data storage includes initially storing a sequence of data pages in a memory that includes multiple memory arrays, such that successive data pages in the sequence are stored in alternation in a first number of the memory arrays. The initially-stored data pages are rearranged in the memory so as to store the successive data pages in the sequence in a second number of the memory arrays, which is less than the first number. The rearranged data pages are read from the second number of the memory arrays.06-18-2009
20090168524WEAR LEVEL ESTIMATION IN ANALOG MEMORY CELLS - A method for operating a memory includes applying at least one pulse to a group of analog memory cells, so as to cause the memory cells in the group to assume respective storage values. After applying the pulse, the respective storage values are read from the memory cells in the group. One or more statistical properties of the read storage values are computed. A wear level of the group of the memory cells is estimated responsively to the statistical properties.07-02-2009
20100131826ESTIMATION OF NON-LINEAR DISTORTION IN MEMORY DEVICES - A method for operating a memory (05-27-2010
20100157641MEMORY DEVICE WITH ADAPTIVE CAPACITY - A method for data storage in a memory (06-24-2010

Patent applications by Eyal Gurgi, Petah-Tikva IL

Eyal Gurgi, Petach Tikva IL

Patent application numberDescriptionPublished
20090213653PROGRAMMING OF ANALOG MEMORY CELLS USING A SINGLE PROGRAMMING PULSE PER STATE TRANSITION - A method for data storage in analog memory cells includes defining multiple programming states for storing data in the analog memory cells. The programming states represent respective combinations of more than one bit and correspond to respective, different levels of a physical quantity stored in the memory cells. The data is stored in the memory cells by applying to the memory cells programming pulses that cause the levels of the physical quantity stored in the memory cells to transition between the programming states, such that a given transition is caused by only a single programming pulse.08-27-2009
20100091535ADAPTIVE ESTIMATION OF MEMORY CELL READ THRESHOLDS - A method for operating a memory (04-15-2010
20100157675PROGRAMMING ORDERS FOR REDUCING DISTORTION IN ARRAYS OF MULTI-LEVEL ANALOG MEMORY CELLS - A method for data storage includes predefining an order of programming a plurality of analog memory cells that are arranged in rows. The order specifies that for a given row having neighboring rows on first and second sides, the memory cells in the given row are programmed only while the memory cells in the neighboring rows on at least one of the sides are in an erased state, and that the memory cells in the given row are programmed to assume a highest programming level, which corresponds to a largest analog value among the programming levels of the cells, only after programming all the memory cells in the given row to assume the programming levels other than the highest level. Data is stored in the memory cells by programming the memory cells in accordance with the predefined order.06-24-2010