Eun-Suk
Eun-Suk Cho, Gyeonggi-Do KR
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20080303079 | Non-volatile Memory Cells Including Fin Structures - A method of forming a non-volatile memory device may include forming a fin protruding from a substrate, forming a tunnel insulating layer on portions of the fin, and forming a floating gate on the tunnel insulting layer so that the tunnel insulating layer is between the floating gate and the fin. A dielectric layer may be formed on the floating gate so that the floating gate is between the dielectric layer and the fin, and a control gate electrode may be formed on the dielectric layer so that the dielectric layer is between the control gate and the fin. Related devices are also discussed. | 12-11-2008 |
20080315282 | Semiconductor Devices Including Transistors Having Three Dimensional Channels - Semiconductor devices including a gate electrode crossing over a semiconductor fin on a semiconductor substrate are provided. A gate insulating layer is provided between the gate electrode and the semiconductor fin. A channel region having a three-dimensional structure defined at the semiconductor fin under the gate electrode is also provided. Doped region is provided in the semiconductor fin at either side of the gate electrode and an interlayer insulating layer is provided on a surface of the semiconductor substrate. A connector region is coupled to the doped region and provided in an opening, which penetrates the interlayer insulating layer. A recess region is provided in the doped region and is coupled to the connector region. The connector region contacts an inner surface of the recess region. Related methods of fabricating semiconductor devices are also provided herein. | 12-25-2008 |
Eun-Suk Cho, Suwon-Si KR
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20080293215 | Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regions - Provided are methods for fabricating semiconductor devices incorporating a fin-FET structure that provides body-bias control, exhibits some characteristic advantages associated with SOI structures, provides increased operating current and/or reduced contact resistance. The methods for fabricating semiconductor devices include forming insulating spacers on the sidewalls of a protruding portion of a first insulation film; forming a second trench by removing exposed regions of the semiconductor substrate using the insulating spacers as an etch mask, and thus forming fins in contact with and supported by the first insulation film. After forming the fins, a third insulation film is formed to fill the second trench and support the fins. A portion of the first insulation film is then removed to open a space between the fins in which additional structures including gate dielectrics, gate electrodes and additional contact, insulating and storage node structures may be formed. | 11-27-2008 |
20110250747 | MEMORY DEVICE AND METHOD FOR MANUFACTURING MEMORY DEVICES - Provided are a method for manufacturing a memory device and a memory device manufactured by the method. The memory device may be a flash memory device. The method for manufacturing the memory device may include sequentially stacking a tunnel dielectric, a floating gate conductive layer, an inter-gate dielectric, and a control gate conductive layer on a semiconductor substrate; anisotropically etching the floating gate conductive layer, the inter-gate dielectric, and the control gate conductive layer to form gate structures. The gate structures may be separated by regions where top surfaces of the tunnel dielectric are exposed, the exposed top surfaces being damaged during formation of the gate structures. The method includes reacting the exposed top surfaces of the tunnel dielectric damaged during the formation of the gate structures with a reaction gas comprising ammonium fluoride to form a reaction by-product on the exposed top surfaces of the tunnel dielectric, and removing the reaction by-product. | 10-13-2011 |
Eun-Suk Jung, Gyeonggi-Do KR
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20100184491 | PHONE - A phone is provided. The phone comprises a first body having a first face, a second body having a second face facing the first face and connected to the first body so as to be slidable in a moving direction parallel to the first and second faces, guiding members protruding from the first face, and a sliding member mounted on the second face and guiding the guiding members so as to slide in the moving direction. The sliding member includes insert members, each of which has a guide groove, disposed parallel to the moving direction to allow the respective guiding members to be inserted thereinto and housings fixedly mounted on the second face to house the respective insert members. The space defined by the first body and the second body is minimized. With this configuration, the first body is movable in a circular arc direction relative to the second body and has the same curvature as the second body. | 07-22-2010 |
Eun-Suk Kim, Chungcheongnam-Do KR
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20160104426 | DISPLAY APPARATUS HAVING A VOLTAGE CONNECTING LINE - A display apparatus includes a display panel including a gate line disposed in a display area and extending in a first direction, a data line extending in a second direction crossing the first direction and a switching element electrically connected to the gate line and the data line. A first data driving part is electrically connected to a first peripheral area adjacent to the display area. A second data driving part is electrically connected to a second peripheral area adjacent to the first peripheral area. The display panel includes a voltage connecting line disposed between the first peripheral area and the second peripheral area. The voltage connecting line connects the first data driving part to the second data driving part. | 04-14-2016 |
Eun-Suk Kim, Asan-Si KR
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20150116307 | DC-DC CONVERTER, DISPLAY APPARATUS HAVING THE SAME AND METHOD OF DRIVING DISPLAY PANEL USING THE SAME - A method of differently producing driving clock signals for a shift register of a gate lines driving circuit of a Liquid Crystal Display (LCD), the method includes the steps of determining whether an ambient temperature is greater than or not in comparison to a predetermined threshold temperature; in response to the determining indicating that the ambient temperature is greater, using a first ON voltage and a first charge canceling method; and in response to the determining indicating that the ambient temperature is not greater, using a second ON voltage and a second charge canceling method, where the second ON voltage is different from the first ON voltage and where the second charge canceling method is different from the first charge canceling method. The second charge canceling method may have a shorter duration than that of the first charge canceling method. The second ON voltage may be greater than the first ON voltage. | 04-30-2015 |
20150279673 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - An exemplary embodiment provides a thin film transistor array panel, including: a substrate; an oxide semiconductor layer disposed on the substrate; an insulating layer disposed on the oxide semiconductor layer; and a pixel electrode disposed on the insulating layer. The oxide semiconductor layer includes a first layer and a second layer disposed on the first layer, the second layer includes an oxide semiconductor including silicon, and the second layer contacts the insulating layer. | 10-01-2015 |
20160055813 | LIQUID CRYSTAL DISPLAY - A liquid crystal display according to an exemplary embodiment of the present disclosure includes: a first substrate where a pixel electrode is formed; a second substrate facing the first substrate; a liquid crystal layer provided between the first substrate and the second substrate; and a driving device connected with the first substrate, wherein the first substrate includes a pixel area where pixels emit light, and a load storage area provided between the pixel area and the driving device and constantly maintaining a load applied to the pixels in the pixel area. | 02-25-2016 |
Eun-Suk Kim, Seongnam-Si KR
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20090253337 | APPARATUS AND METHOD FOR BAKING FLUORESCENT LAMP - This disclosure relates to an apparatus and a method for making or baking a fluorescent lamp. An apparatus for baking a fluorescent lamp includes a heater to heat a plurality of quartz tubes. Each tube has a fluorescent lamp provided therein. A plurality of rollers rotates the quartz tubes placed thereon, and a transfer block has a plurality of auxiliary rollers. The transfer block is configured to move in a first direction to transfer the plurality of quartz tubes from the plurality of rotating rollers to the plurality of auxiliary rollers. A process for heating at least one fluorescent lamp includes a step of providing a plurality of quartz tubes on a plurality of rotating rollers, at least one quartz tube having a fluorescent lamp provided therein, heating the plurality of quartz tubes while being rotated on the plurality of rollers, and transferring the plurality of quartz tube using a transfer block having a plurality of auxiliary rollers. | 10-08-2009 |
Eun-Suk Seo, Seoul KR
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20090125029 | Device for Aligning and Guiding Femoral Resection Guide and Femoral Implant Impactor - The present invention discloses a device for aligning and guiding a femoral resection guide and a femoral implant impactor, whereby the femoral resection guide and the femoral implant impactor are aligned perpendicular to the mechanical axes of the coronal plane and sagittal plane of the femur at the bottom end of the femur, and are guided so as to be rotation-aligned and mounted in parallel with a condyle axis connecting the inner condyle and outer condyle. The device comprises a main frame | 05-14-2009 |