| Patent application number | Description | Published |
| 20090279045 | Methods of manufacturing liquid crystal display devices - An LCD device and a method for manufacturing the same is disclosed, in which it is possible to correct a problem of insufficient or excessive supply of liquid crystal in an LCD device by controlling an amount of liquid crystal. The method includes preparing a liquid crystal cell comprised of a first substrate, a second substrate, a liquid crystal layer between the first and second substrates, and a first sealant formed in the periphery of the liquid crystal layer between the first and second substrates; measuring an amount of liquid crystal provided to the inside of liquid crystal cell; forming an inlet for liquid crystal in the first sealant; and regulating the amount of liquid crystal by supplying or discharging the liquid crystal through the inlet; and sealing the inlet. | 11-12-2009 |
| 20100214522 | METHOD FOR ADJUSTING AMOUNT OF LIQUID CRYSTAL IN AN LCD DEVICE INCLUDING REDUCING THE THICKNESS OF A SEAL MEMBER TO FORM A REPAIR REGION BY LASER HEATING A METAL PATTERN THEREUNDER - A method for adjusting an amount of liquid crystal in a liquid crystal display (LCD) device includes injecting a liquid crystal into a liquid crystal receiving space. The liquid crystal receiving space is disposed between a first substrate, a second substrate that faces the first substrate, and a sealing member interposed between the first and second substrates. The method for adjusting an amount of liquid crystal in a liquid crystal display (LCD) device further includes reducing a thickness of the sealing member at a predetermined portion of the sealing member to form a repair region, and pressurizing the liquid crystal to break the sealing member at the repair region to discharge some of the liquid crystal from the liquid crystal receiving space, so as to adjust the amount of the liquid crystal in the liquid crystal receiving space. The method for adjusting an amount of liquid crystal in a liquid crystal display (LCD) device also includes resealing the broken repair region of the sealing member. | 08-26-2010 |
| 20100214523 | METHOD FOR ADJUSTING AMOUNT OF LIQUID CRYSTAL IN AN LCD DEVICE INCLUDING FORMING A REPAIR REGION BY IRRADIATING A LIGHT ONTO A SEALING MEMBER HAVING A THICKNESS WITH AN INCLUDED METAL PATTERN CAPABLE OF BEING BURNT DOWN - A method for adjusting an amount of liquid crystal in a liquid crystal display (LCD) device includes injecting a liquid crystal into a liquid crystal receiving space. The liquid crystal receiving space is disposed between a first substrate, a second substrate that faces the first substrate, and a sealing member interposed between the first and second substrates. The method for adjusting an amount of liquid crystal in an LCD device further includes irradiating a light to a portion of the sealing member while varying an irradiating angle of the light so as to form a repair region at the sealing member that has a thickness smaller than that of the sealing member. The method for adjusting an amount of liquid crystal in an LCD device also comprises pressurizing the liquid crystal to form an opening in the repair region of the sealing member and discharge some of the liquid crystal from the liquid crystal receiving space through the opening formed in the repair region, and sealing the opening of the | 08-26-2010 |
| 20110170046 | METHOD FOR ADJUSTING AMOUNT OF LIQUID CRYSTAL IN AN LCD DEVICE INCLUDING REDUCING THE THICKNESS OF A SEAL MEMBER TO FORM A REPAIR REGION BY LASER HEATING A METAL PATTERN THEREUNDER - A method for adjusting an amount of liquid crystal in a liquid crystal display (LCD) device includes injecting a liquid crystal into a liquid crystal receiving space. The liquid crystal receiving space is disposed between a first substrate, a second substrate that faces the first substrate, and a sealing member interposed between the first and second substrates. The method for adjusting an amount of liquid crystal in a liquid crystal display (LCD) device further includes reducing a thickness of the sealing member at a predetermined portion of the sealing member to form a repair region, and pressurizing the liquid crystal to break the sealing member at the repair region to discharge some of the liquid crystal from the liquid crystal receiving space, so as to adjust the amount of the liquid crystal in the liquid crystal receiving space. The method for adjusting an amount of liquid crystal in a liquid crystal display (LCD) device also includes resealing the broken repair region of the sealing member. | 07-14-2011 |
| Patent application number | Description | Published |
| 20120113073 | DISPLAY APPARATUS - A display apparatus is disclosed. The display includes a display panel, a signal transmitter, and a driving chip. The signal transmitter is electrically connected with the display panel at a first bonding region of the display panel and receives an input signal from the outside. Further, the driving chip is electrically connected with the display panel at a second bonding region of the display panel and outputs a driving signal in response to the input signal. Further, the signal transmitter includes a base layer, a first conductive layer that is electrically connected with the display panel, and a second conductive layer that covers the first bonding region and the second bonding region. The second conductive layer can block electro static discharge and electro magnetic interference, such that it is possible to prevent display quality of the display apparatus from being deteriorated. | 05-10-2012 |
| 20120113084 | LIQUID CRYSTAL DISPLAY DEVICE AND DRIVING METHOD OF THE SAME - A liquid crystal display (LCD) and a driving method thereof are disclosed. According to some aspects the liquid crystal display (LCD) includes: a display unit including a plurality of pixels arranged in a matrix, a gate line respectively connected to the plurality of pixel rows, and a data line respectively connected to a plurality of pixel columns. The LCD further includes a gate driver configured to generate and sequentially transmit a plurality of gate signals to a plurality of pixel rows through the gate line by row to turn on a switch included in the pixel. The LCD further includes a data driver configured to apply a data voltage according to an image data signal to the pixel during a period in which the switch is turned on; and a common voltage generator configured to generate and apply a common voltage having a polarity that is opposite to the polarity of the data voltage to the pixel. According to some aspects, the period in which the switch is turned on includes a first period and a second period that are separated from each other by a period in which the data voltage is transmitted to at least one pixel row, and during the first period, as a voltage according to a difference between the data voltage transmitted to the pixel and the common voltage applied to the pixel, a voltage for displaying a black image according to a liquid crystal mode of the display unit is stored to the pixel. | 05-10-2012 |
| Patent application number | Description | Published |
| 20100287447 | MEMORY SYSTEM IDENTIFYING AND CORRECTING ERASURE USING REPEATED APPLICATION OF READ OPERATION - Provided is a read method for a memory system. The read method determines whether a read data error is correctable. The read method applies a plurality of read operations at a set read voltage level to identify erasure candidates, when the error is uncorrectable. The read method performs erasure decoding using an error correction code or an error detection code for the erasure candidates. | 11-11-2010 |
| 20110007563 | NONVOLATILE MEMORY DEVICE, SYSTEM, AND RELATED METHODS OF OPERATION - A method of reading a nonvolatile memory device comprises measuring threshold voltage distributions of a plurality of memory cells, combining the measured threshold voltage distributions, and determining local minimum points in the combined threshold voltage distributions to determine read voltages for a predetermined group of memory cells. | 01-13-2011 |
| 20110038207 | FLASH MEMORY DEVICE, PROGRAMMING AND READING METHODS PERFORMED IN THE SAME - The flash memory device includes a control logic circuit and a bit level conversion logic circuit. The control logic circuit programs first through N | 02-17-2011 |
| 20110125975 | INTERLEAVING APPARATUSES AND MEMORY CONTROLLERS HAVING THE SAME - An interleaving apparatus may include a first buffer unit configured to buffer input data in units having a size of a sector to generate sector unit data, an encoding unit configured to encode the sector unit data and generate a plurality of parity codes based on the encoding, a second buffer unit configured to interleave the sector unit data and the parity codes and generate interleaving data based on the interleaving, the second buffer unit including a plurality of output buffers configured to store the interleaving data, and an output unit configured to output the interleaving data. | 05-26-2011 |
| 20110216589 | FLASH MEMORY DEVICE, MEMORY SYSTEM AND METHOD OF OPERATING THE SAME - A memory system includes a memory device and a data converting device. The memory device includes a memory cell array which includes a plurality of memory cells. The data converting device includes an encoding device. The encoding device converts input data into converted data by changing a bandwidth corresponding to the input data, and provides the converted data to the memory device. Accordingly, the memory system is capable of improving the reliability of programmed data by changing the bandwidth corresponding to data to be programmed. A method of storing data in a memory system is also disclosed. | 09-08-2011 |
| 20110216590 | NONVOLATILE MEMORY DEVICE USING INTERLEAVING TECHNOLOGY AND PROGRAMMMING METHOD THEREOF - A nonvolatile memory device using interleaving technology is provided. The nonvolatile memory device includes a first controller configured to allocate one of 2 | 09-08-2011 |
| 20110289278 | METHOD OF ESTIMATING READ LEVEL FOR A MEMORY DEVICE, MEMORY CONTROLLER THEREFOR, AND RECORDING MEDIUM - A method of estimating a read level for a memory device includes calculating first information corresponding to at least one among information about the number of cells having a particular logic level in data to be programmed and information about the number of cells having a particular cell state and storing the first information during a program operation; reading the data based on a threshold level that has been set and calculating second information about the number of cells in at least one state defined by the threshold level with respect to the read data; calculating third information about the number of cells in the at least one state, which corresponds to the second information, using a probability based on the first information; comparing the second information with the third information; and determining whether to change the threshold level according to the comparison result. | 11-24-2011 |
| 20120033502 | METHOD OF READING DATA IN NON-VOLATILE MEMORY DEVICE, AND DEVICE THEREOF - A method of reading data in a non-volatile memory device. The method includes reading a plurality of memory cells of a first page in a memory cell array using a first read level, reading a plurality of memory cells of a second page adjacent to the memory cells of the first page using a second read level, determining whether a state of each memory cell of the first page has been changed based on the first read level to verify a threshold voltage of each memory cell of the second page based on the second read level, and revising the state of each memory cell of the second page according to a result of the determination. | 02-09-2012 |
| Patent application number | Description | Published |
| 20090214227 | DEVELOPING CARTRIDGE, IMAGE FORMING APPARATUS HAVING THE SAME, AND PRINTING METHOD FOR AN IMAGE FORMING APPARATUS - A developing cartridge usable with an image forming apparatus includes a housing having a developing member, a developer storing portion storing developer supplied to the developing member, and a mounting portion allowing at least one developer cartridge storing supplementary developer to be detachably mounted. Printing operations can be performed using the developer available in the developer-storing portion even in the absence of a developer cartridge. | 08-27-2009 |
| 20090214257 | COVER MEMBER, DEVELOPING CARTRIDGE AND DEVELOPING UNIT FOR IMAGE FORMING APPARATUS - A developing unit includes a developer cartridge containing developer and a developing cartridge with a developing cartridge body comprising a mounting portion and a cover member. The mounting portion accepts the developer cartridge for replenishing developer consumed by the developing cartridge. The cover member closes an opening of the mounting portion when the developer cartridge is not inserted into the mounting portion. When a developing unit is initially constructed, printing is performed using developer contained in the developing unit. A developer cartridge containing developer can be inserted into the developing unit, allowing the supply of developer in the developing unit to be replenished. | 08-27-2009 |
| 20090214268 | DEVELOPING APPARATUS, IMAGE FORMING APPARATUS HAVING THE SAME, AND DEVELOPER SUPPLYING METHOD FOR A DEVELOPING APPPARATUS - A developing apparatus usable with an image forming apparatus includes a developer cartridge having an outlet through which developer is discharged, a developing cartridge, in which the developer cartridge is detachably disposed, has an inlet, through which the developer discharged from the outlet of the developer cartridge enters, and a connecting member connecting the outlet of the developer cartridge and the inlet of the developing cartridge so that the developer is supplied from the developer cartridge to the developing cartridge, wherein through the arrangement of the developer cartridge, the developing cartridge and the connecting member, the flow of developer from the developer cartridge to the developing cartridge is regulated based on the developer pressure in the developing cartridge. | 08-27-2009 |
| 20090214269 | DEVELOPER CARTRIDGE, DEVELOPING DEVICE, AND IMAGE FORMING APPARATUS HAVING THE SAME - A developing cartridge and a developing device capable of preventing developer leak which may occur during replacement of a developer containing unit, and an image forming apparatus having the same are provided. The image forming apparatus includes an image forming apparatus body where a transfer path for a printing medium is formed, and a developing device for developing a visible image. The developing device may include, for example, developing cartridge, a developer containing unit, which contains a supply of developer therein, and which is detachably disposed in the developing cartridge to form a developer transfer path fluidly communicating with the developing cartridge, and a shutter unit which closes the developer transfer path when the developer containing unit is removed from the developing cartridge. | 08-27-2009 |
| Patent application number | Description | Published |
| 20090111255 | METHOD FOR FABRICATING TRANSISTOR IN SEMICONDUCTOR DEVICE - Provided is a method for fabricating a transistor in a semiconductor device. The method includes forming an etch stop layer pattern over a semiconductor substrate; forming a semiconductor layer for covering the etch stop layer pattern; forming a recess trench that exposes an upper surface of the etch stop layer pattern by etching the semiconductor layer pattern; removing the etch stop layer pattern exposed in the recess trench; and forming a gate that fills the recess trench. | 04-30-2009 |
| 20090256209 | Gate Structure of Semiconductor Device - A gate structure of a semiconductor device comprising a silicon substrate having a field oxide film, a plurality of gates formed by sequentially stacking a first gate dielectric film, a first gate conductive film, and a gate silicide film on the silicon substrate. a thermal oxide film formed on a side of the first gate conductive film, a plurality of trenches formed between the gates, a second gate oxide film formed on an interior wall of each trench; and a second conductive film formed in a spacer shape on a predetermined region of the second gate oxide film, and on a side of the first gate conductive film, the gate silicide film and the thermal oxide film. | 10-15-2009 |
| 20110306192 | METHOD FOR FORMING IMPURITY REGION OF VERTICAL TRANSISTOR AND METHOD FOR FABRICATING VERTICAL TRANSISTOR USING THE SAME - A method for forming an impurity region of a vertical transistor includes forming an impurity ion junction region within a semiconductor substrate, and forming a trench by etching the semiconductor substrate in which the impurity ion junction region is formed. The etching process is performed to remove a portion of the impurity ion junction region, so that a remaining portion of the impurity ion junction region is exposed to a lower side wall of the trench to serve as a buried bit line junction region. | 12-15-2011 |
| 20120007171 | SEMICONDUCTOR MEMORY DEVICE HAVING VERTICAL TRANSISTOR AND BURIED BIT LINE AND METHOD FOR FABRICATING THE SAME - A semiconductor memory device includes an active region protruding upward from a substrate, wherein the active region is arranged next to a trench on the substrate, a first impurity region formed at an upper portion of the active region, a second impurity region formed at a lower portion of the active region, a gate dielectric layer formed along a side of the active region between the first impurity region and the second impurity region, a gate electrode layer formed on the gate dielectric layer, a buried bit line formed at a lower portion of the trench, and a polysilicon layer formed over the buried bit line, wherein the polysilicon layer electrically connects the buried bit line with the second impurity region. | 01-12-2012 |
| 20120112270 | VERTICAL TRANSISTOR HAVING BURIED JUNCTION AND METHOD FOR MANUFACTURING THE SAME - A buried junction is formed in a vertical transistor of a semiconductor device. Wall bodies are formed from a semiconductor substrate, the wall bodies protruding while having a first side surface and a second side surface in the opposite side of the first side surface; forming a one side contact mask having an opening which selectively opens a portion of the first side surface of the wall body; and forming a first impurity layer and a second impurity layer surrounding the first impurity layer by diffusing impurities having different diffusivities into the portion of the first side surface exposed to the opening. | 05-10-2012 |
| Patent application number | Description | Published |
| 20090004816 | METHOD OF FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE - A method of forming an isolation layer in a semiconductor device using rapid vapor deposition to fill in a trench of the semiconductor device comprises forming a hydrophilic layer on the trench and forming a hydrophobic layer on a region other than the trench, and selectively forming a buried insulating layer in the trench using a catalytic reaction of the hydrophilic layer. | 01-01-2009 |
| 20110045666 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device, including forming gate patterns over a substrate, forming conductive layer covering top and sidewalls of each gate pattern, forming a metal layer for a silicidation process over the conductive layer, and silicifying the conductive layer and the gate patterns using the metal layer. | 02-24-2011 |
| 20110129974 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes forming a plurality of first trenches by etching a substrate, forming a plurality of buried bit lines in the first trenches, forming a plurality of second trenches to expose at least one sidewall of the buried bit lines by etching the substrate, and forming a plurality of one-sidewall contact plugs which fill the second trenches. | 06-02-2011 |